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Issue 4, 2024
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PACS numbers

73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions 85.30.−z Semiconductor devices 85.60.Dw Photodiodes; phototransistors; photoresistors
  1. A.A. Lebedev, P.A. Ivanov et al “SiC-based electronics (100th anniversary of the Ioffe Institute)” 62 754–794 (2019)
    81.05.ue, 81.10.−h, 85.30.−z (all)
  2. I. Akasaki “Fascinated journeys into blue light” 59 (5) (2016)
    42.72.Bj, 81.10.−h, 85.60.Dw (all)
  3. H. Amano “Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation” 59 (5) (2016)
    42.72.Bj, 81.10.−h, 85.60.Dw (all)
  4. Sh. Nakamura “Background story of the invention of efficient blue InGaN light emitting diodes” 59 (5) (2016)
    42.72.Bj, 81.10.−h, 85.60.Dw (all)
  5. A.G. Vitukhnovsky “Organic photonics: achievements and disappointments” 56 623–627 (2013)
    42.70.Jk, 85.60.Dw, 85.60.Pg (all)
  6. W.S. Boyle “CCD — An extension of man’s view” 53 (12) (2010)
    01.30.Bb, 85.30.−z, 85.60.Gz (all)
  7. G.E. Smith “The invention and early history of the CCD” 53 (12) (2010)
    01.30.Bb, 85.30.−z, 85.60.Gz (all)
  8. T.V. Perevalov, V.A. Gritsenko “Application and electronic structure of high-permittivity dielectrics” 53 561–575 (2010)
    71.15.Mb, 77.55.D−, 85.30.−z (all)
  9. I.I. Taubkin “Photoinduced and thermal noise in semiconductor p-n junctions” 49 1289–1306 (2006)
    72.70.+m, 85.30.−z, 85.60.Dw (all)
  10. D.R. Khokhlov, A.V. Mitin et al “Scientific session of the Physical Sciences Division of the Russian Academy of Sciences (12 April 2006)” 49 955–959 (2006)
    01.10.Fv, 07.57.−c, 78.20.−e, 85.30.−z (all)
  11. I.V. Grekhov, G.A. Mesyats “Nanosecond semiconductor diodes for pulsed power switching” 48 703–712 (2005)
    84.70.+p, 85.30.−z, 85.30.Kk (all)
  12. Yu.B. Bolkhovityanov, O.P. Pchelyakov, S.I. Chikichev “Silicon-germanium epilayers: physical fundamentals of growing strained and fully relaxed heterostructures” 44 655–680 (2001)
    61.72.Lk, 62.25.+g, 73.40.Kp, 81.15.−z (all)
  13. O.P. Pchelyakov “Molecular beam epitaxy: equipment, devices, technology” 43 923–925 (2000)
    07.07.−a, 81.15.Hi, 85.30.−z (all)
  14. E.V. Devyatov, A.A. Shashkin et al “Tunneling measurements of the Coulomb pseudogap in a two-dimensional electron system in a quantizing magnetic field” 43 285–288 (2000)
    72.20.My, 73.40.Kp (all)
  15. V.A. Volkov, E.E. Takhtamirov “Dynamics of an electron with space-dependent mass and the effective-mass method for semiconductor heterostructures” 40 1071–1075 (1997)
    71.25.Cx, 73.20.Dx, 73.40.Kp
  16. V.S. Vavilov “Semiconductors in the modern world” 38 555–558 (1995)
    85.30.−z, 72.80.−r, 01.10.Fv (all)
  17. L.N. Kryzhanovskii “A history of the invention of and research on the coherer” 35 (4) 334–338 (1992)
    85.30.−z, 84.32.Ff (all)
  18. V.V. Maier, R.V. Maier “Demonstration of the acoustic Doppler effect” 34 (3) 262–264 (1991)
    43.28.Py, 43.38.Kb, 43.66.Lj, 85.60.Jb, 85.60.Dw (all)
  19. V.E. Golant, Yu.V. Gulyaev et al “Zhores Ivanovich Alferov (on his sixtieth birthday)” 33 (3) 257–258 (1990)
    01.60.+q, 85.30.−z (all)
  20. B.G. Idlis “Physics and technology of submicron structures” 32 834–834 (1989)
    01.30.Vv, 85.30.−z (all)
  21. A.P. Silin “High magnetic fields in semiconductor physics” 31 784–784 (1988)
    01.30.Vv, 72.20.Ht, 73.43.−f, 73.40.Kp, 73.63.Hs, 72.20.My (all)
  22. I.V. Kukushkin, S.V. Meshkov, V.B. Timofeev “Two-dimensional electron density of states in a transverse magnetic field” 31 511–534 (1988)
    73.20.At, 73.40.Qv, 73.40.Kp, 71.70.Di, 73.40.Cg, 72.20.Jv (all)
  23. Zh.I. Alferov, V.S. Vavilov et al “Viktor Leopol’dovich Bonch-Bruevich (Obituary)” 31 171–172 (1988)
    01.60.+q, 01.10.Cr, 01.10.Fv, 85.30.−z, 68.43.Mn, 82.65.+r (all)
  24. O.P. Zaskal’ko “Picosecond electronics and optoelectronics” 30 350–350 (1987)
    01.30.Vv, 01.30.Ee, 85.60.−q, 85.30.−z, 81.15.Gh, 81.15.Hi (all)
  25. A.P. Aleksandrov, Zh.I. Alferov et al “Vladimir Maksimovich Tuchkevich (on his eightieth birthday)” 27 980–982 (1984)
    01.60.+q, 85.30.−z (all)
  26. A.N. Georgobiani “Wide-band II-VI semiconductors and the prospects of their application” 17 424–437 (1974)
    73.40.Lq, 78.60.Fi, 85.30.−z, 61.72.Ji (all)
  27. Zh.I. Alferov “Semiconductor Devices with Heterojunctions” 15 834–835 (1973)
    73.40.Kp, 85.30.−z, 85.60.Dw (all)
  28. M.I. Elinson “Problems of Functional Microelectronics” 16 281–281 (1973)
    85.40.−e, 85.30.−z (all)
  29. K.A. Valiev “Present-day Semiconductor Microelectronics and the Prospects of its Development” 16 281–283 (1973)
    85.40.−e, 85.30.−z, 73.40.Kp, 73.40.Lq (all)
  30. V.I. Fistul’, N.Z. Shvarts “TUNNEL DIODES” 5 430–459 (1962)
    85.30.Mn, 73.40.Gk, 73.40.Kp, 85.30.De (all)
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