PACS numbers

85.30.−z Semiconductor devices 85.40.−e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
  1. Celebrating 50 years of the laser (Scientific session of the General Meeting of the Physical Sciences Division of the Russian Academy of Sciences, 13 December 2010)54 837–870 (2011)
    01.10.Fv, 03.75.−b, 07.57.−c, 32.30.Jc, 37.10.−x, 37.10.De, 37.10.Gh, 42.62.−b, 42.65.−k, 42.70.−a, 42.82.−m, 67.85.−d, 78.67.−n, 85.40.−e, 84.40.Ik (all)
  2. N.N. Ledentsov, J.A. Lott “New-generation vertically emitting lasers as a key factor in the computer communication era54 853–858 (2011)
    42.62.−b, 42.82.−m, 85.40.−e (all)
  3. W.S. Boyle “CCD — An extension of man’s view53 (12) (2010)
    01.30.Bb, 85.30.−z, 85.60.Gz (all)
  4. G.E. Smith “The invention and early history of the CCD53 (12) (2010)
    01.30.Bb, 85.30.−z, 85.60.Gz (all)
  5. T.V. Perevalov, V.A. Gritsenko “Application and electronic structure of high-permittivity dielectrics53 561–575 (2010)
    71.15.Mb, 77.55.D−, 85.30.−z (all)
  6. A.I. Vorob’eva “Fabrication techniques of electrode arrays for carbon nanotubes52 225–234 (2009)
    73.63.Fg, 85.35.Kt, 85.40.−e (all)
  7. I.I. Taubkin “Photoinduced and thermal noise in semiconductor p-n junctions49 1289–1306 (2006)
    72.70.+m, 85.30.−z, 85.60.Dw (all)
  8. D.R. Khokhlov, A.V. Mitin et alScientific session of the Physical Sciences Division of the Russian Academy of Sciences (12 April 2006)49 955–959 (2006)
    01.10.Fv, 07.57.−c, 78.20.−e, 85.30.−z (all)
  9. I.V. Grekhov, G.A. Mesyats “Nanosecond semiconductor diodes for pulsed power switching48 703–712 (2005)
    84.70.+p, 85.30.−z, 85.30.Kk (all)
  10. O.P. Pchelyakov “Molecular beam epitaxy: equipment, devices, technology43 923–925 (2000)
    07.07.−a, 81.15.Hi, 85.30.−z (all)
  11. V.S. Vavilov “Semiconductors in the modern world38 555–558 (1995)
    85.30.−z, 72.80.−r, 01.10.Fv (all)
  12. L.N. Kryzhanovskii “A history of the invention of and research on the coherer35 (4) 334–338 (1992)
    85.30.−z, 84.32.Ff (all)
  13. V.B. Timofeev “Current state of semiconductor silicon technology and material science33 (6) 492–493 (1990)
    01.30.Vv, 85.40.−e, 81.10.−h, 81.15.−z (all)
  14. V.E. Golant, Yu.V. Gulyaev et alZhores Ivanovich Alferov (on his sixtieth birthday)33 (3) 257–258 (1990)
    01.60.+q, 85.30.−z (all)
  15. B.G. Idlis “Physics and technology of submicron structures32 834–834 (1989)
    01.30.Vv, 85.30.−z (all)
  16. Zh.I. Alferov, V.S. Vavilov et alViktor Leopol’dovich Bonch-Bruevich (Obituary)31 171–172 (1988)
    01.60.+q, 01.10.Cr, 01.10.Fv, 85.30.−z, 68.43.Mn, 82.65.+r (all)
  17. O.P. Zaskal’ko “Picosecond electronics and optoelectronics30 350–350 (1987)
    01.30.Vv, 01.30.Ee, 85.60.−q, 85.30.−z, 81.15.Gh, 81.15.Hi (all)
  18. A.P. Aleksandrov, Zh.I. Alferov et alVladimir Maksimovich Tuchkevich (on his eightieth birthday)27 980–982 (1984)
    01.60.+q, 85.30.−z (all)
  19. A.N. Georgobiani “Wide-band II-VI semiconductors and the prospects of their application17 424–437 (1974)
    73.40.Lq, 78.60.Fi, 85.30.−z, 61.72.Ji (all)
  20. Zh.I. Alferov “Semiconductor Devices with Heterojunctions15 834–835 (1973)
    73.40.Kp, 85.30.−z, 85.60.Dw (all)
  21. M.I. Elinson “Problems of Functional Microelectronics16 281–281 (1973)
    85.40.−e, 85.30.−z (all)
  22. K.A. Valiev “Present-day Semiconductor Microelectronics and the Prospects of its Development16 281–283 (1973)
    85.40.−e, 85.30.−z, 73.40.Kp, 73.40.Lq (all)
  23. A.M. Kugushev “RADIO ELECTRONICS (On the 100th Birthday of A. S. Popov)2 305–328 (1959)
    84.40.Ua, 41.20.Jb, 85.40.−e, 84.40.Xb (all)
  24. P.V. Ratnikov, A.P. Silin “Two-dimensional graphene electronics: current state and prospects”, accepted
    68.65.Pq, 68.65.Cd, 73.21.Fg, 73.40.Gk, 73.50.−h, 85.30.Tv, 85.40.−e, 85.60.−q, 85.65.+h (all)
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