PACS numbers

85.40.−e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
  1. P.V. Ratnikov, A.P. Silin “Two-dimensional graphene electronics: current status and prospects61 1139–1174 (2018)
    68.65.Cd, 68.65.Pq, 73.21.Fg, 73.40.Gk, 73.50.−h, 85.30.Tv, 85.40.−e, 85.60.−q, 85.65.+h (all)
  2. Celebrating 50 years of the laser (Scientific session of the General Meeting of the Physical Sciences Division of the Russian Academy of Sciences, 13 December 2010)54 837–870 (2011)
    01.10.Fv, 03.75.−b, 07.57.−c, 32.30.Jc, 37.10.−x, 37.10.De, 37.10.Gh, 42.62.−b, 42.65.−k, 42.70.−a, 42.82.−m, 67.85.−d, 78.67.−n, 85.40.−e, 84.40.Ik (all)
  3. N.N. Ledentsov, J.A. Lott “New-generation vertically emitting lasers as a key factor in the computer communication era54 853–858 (2011)
    42.62.−b, 42.82.−m, 85.40.−e (all)
  4. A.I. Vorob’eva “Fabrication techniques of electrode arrays for carbon nanotubes52 225–234 (2009)
    73.63.Fg, 85.35.Kt, 85.40.−e (all)
  5. V.B. Timofeev “Current state of semiconductor silicon technology and material science33 (6) 492–493 (1990)
    01.30.Vv, 85.40.−e, 81.10.−h, 81.15.−z (all)
  6. M.I. Elinson “Problems of Functional Microelectronics16 281–281 (1973)
    85.40.−e, 85.30.−z (all)
  7. K.A. Valiev “Present-day Semiconductor Microelectronics and the Prospects of its Development16 281–283 (1973)
    85.40.−e, 85.30.−z, 73.40.Kp, 73.40.Lq (all)
  8. A.M. Kugushev “RADIO ELECTRONICS (On the 100th Birthday of A. S. Popov)2 305–328 (1959)
    84.40.Ua, 41.20.Jb, 85.40.−e, 84.40.Xb (all)
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