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Molecular beam epitaxy: equipment, devices, technology


Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation
Fulltext is available at IOP
PACS: 07.07.−a, 81.15.Hi, 85.30.−z (all)
DOI: 10.1070/PU2000v043n09ABEH000790
URL: https://ufn.ru/en/articles/2000/9/d/
Citation: Pchelyakov O P "Molecular beam epitaxy: equipment, devices, technology" Phys. Usp. 43 923–925 (2000)
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Оригинал: Пчеляков О П «Молекулярно-лучевая эпитаксия: оборудование, приборы, технология» УФН 170 993–995 (2000); DOI: 10.3367/UFNr.0170.200009d.0993

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