Conferences and symposia

Molecular beam epitaxy: equipment, devices, technology

Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation
Text can be downloaded in Russian. English translation is available on IOP Science.
PACS: 07.07.−a, 81.15.Hi, 85.30.−z (all)
DOI: 10.1070/PU2000v043n09ABEH000790
Citation: Pchelyakov O P "Molecular beam epitaxy: equipment, devices, technology" Phys. Usp. 43 923–925 (2000)
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Оригинал: Пчеляков О П «Молекулярно-лучевая эпитаксия: оборудование, приборы, технология» УФН 170 993–995 (2000); DOI: 10.3367/UFNr.0170.200009d.0993

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