PACS numbers

61.72.Lk Linear defects: dislocations, disclinations 62.25.+g Mechanical properties of nanoscale materials 73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions 81.15.−z Methods of deposition of films and coatings; film growth and epitaxy
  1. T.S. Argunova, V.G. Kohn “Study of micropores in single crystals by in-line phase contrast imaging with synchrotron radiation62 602–616 (2019)
    42.25.Fx, 42.25.Kb, 61.72.−y, 61.72.Ff, 61.72.Lk (all)
  2. Yu.B. Bolkhovityanov, O.P. Pchelyakov “GaAs epitaxy on Si substrates: modern status of research and engineering51 437–456 (2008)
    61.72.Lk, 62.25.−g, 81.05.Cy, 81.05.Ea, 81.15.−z, 85.40.Sz (all)
  3. I. Božović “Experiments with atomically smooth thin films of cuprate superconductors: strong electron-phonon coupling and other surprises51 170–180 (2008)
    74.45.+c, 74.78.−w, 81.15.−z (all)
  4. A.V. Eletskii “Mechanical properties of carbon nanostructures and related materials50 225–261 (2007)
    61.46.+w, 62.25.+g, 81.07.−b, 85.85.+j (all)
  5. G.N. Makarov “Extreme processes in clusters impacting on a solid surface49 117–166 (2006)
    34.50.−s, 36.40.−c, 43.25.Cb, 79.20.Rf, 81.15.−z (all)
  6. M.O. Katanaev “Geometric theory of defects48 675–701 (2005)
    02.40.−k, 46.05.+b, 61.72.Lk, 63.20.Mt (all)
  7. A.D. Pogrebnyak, Yu.N. Tyurin “Modification of material properties and coating deposition using plasma jets48 487–514 (2005)
    52.77.−j, 81.15.−z, 81.65.−b, 82.45.Bb (all)
  8. A.I. Musienko, L.I. Manevich “Classical mechanical analogs of relativistic effects47 797–820 (2004)
    03.30.+p, 05.45.Yv, 11.15.−q, 61.72.Lk (all)
  9. Yu.S. Nechaev “Characteristics of hydride-like segregates of hydrogen at dislocations in palladium44 1189–1198 (2001)
    61.72.Lk, 61.72.Ss, 64.75.+g, 66.30.Jt (all)
  10. Yu.B. Bolkhovityanov, O.P. Pchelyakov, S.I. Chikichev “Silicon-germanium epilayers: physical fundamentals of growing strained and fully relaxed heterostructures44 655–680 (2001)
    61.72.Lk, 62.25.+g, 73.40.Kp, 81.15.−z (all)
  11. E.V. Devyatov, A.A. Shashkin et alTunneling measurements of the Coulomb pseudogap in a two-dimensional electron system in a quantizing magnetic field43 285–288 (2000)
    72.20.My, 73.40.Kp (all)
  12. V.I. Boiko, A.N. Valyaev, A.D. Pogrebnyak “Metal modification by high-power pulsed particle beams42 1139–1166 (1999)
    41.75.−i, 61.80.−x, 81.15.−z, 81.40.−z (all)
  13. S.A. Kukushkin, A.V. Osipov “Thin-film condensation processes41 983–1014 (1998)
    68.35.−p, 68.18.+p, 68.15.+e, 81.15.−z (all)
  14. V.A. Volkov, E.E. Takhtamirov “Dynamics of an electron with space-dependent mass and the effective-mass method for semiconductor heterostructures40 1071–1075 (1997)
    71.25.Cx, 73.20.Dx, 73.40.Kp
  15. V.B. Shikin, Yu.V. Shikina “Charged dislocations in semiconductor crystals38 845–875 (1995)
    61.72.Lk, 71.55.Cn, 72.80.Cw (all)
  16. A.I. Olemskoi, I.A. Sklyar “Evolution of the defect structure of a solid during plastic deformation35 (6) 455–480 (1992)
    62.20.Fe, 61.72.Ji, 61.72.Lk, 61.72.Bb (all)
  17. V.B. Timofeev “Current state of semiconductor silicon technology and material science33 (6) 492–493 (1990)
    01.30.Vv, 85.40.−e, 81.10.−h, 81.15.−z (all)
  18. A.P. Silin “High magnetic fields in semiconductor physics31 784–784 (1988)
    01.30.Vv, 72.20.Ht, 73.43.−f, 73.40.Kp, 73.63.Hs, 72.20.My (all)
  19. I.V. Kukushkin, S.V. Meshkov, V.B. Timofeev “Two-dimensional electron density of states in a transverse magnetic field31 511–534 (1988)
    73.20.At, 73.40.Qv, 73.40.Kp, 71.70.Di, 73.40.Cg, 72.20.Jv (all)
  20. O.A. Pankratov “Two-dimensional systems: physics and new devices30 754–755 (1987)
    01.30.Vv, 81.15.−z, 71.55.−i, 73.43.−f (all)
  21. L.N. Rashkovich, O.A. Shustin “New optical interference methods for studying the kinetics of crystallization in solution30 280–283 (1987)
    81.10.Dn, 61.72.Lk (all)
  22. S.S. Rozhkov “Topology, manifolds, and homotopy: Basic concepts and applications to n-field models29 530–538 (1986)
    02.40.−k, 11.27.+d, 11.15.−q, 61.72.Lk, 61.30.−v, 75.50.−y (all)
  23. V.G. Chudinov “Computer simulation of radiation processes28 277–278 (1985)
    61.72.Bb, 61.72.Ji, 61.72.Lk, 61.80.Hg, 61.82.Bg (all)
  24. V.R. Regel’ “Some problems of contemporary research on the mechanical properties of crystals27 547–548 (1984)
    62.20.Fe, 81.40.Lm, 61.72.Lk (all)
  25. V.V. Kirsanov, A.N. Orlov “Computer simulation of the atomic structure of defects in metals27 106–133 (1984)
    61.72.Ji, 61.72.Bb, 61.72.Yx, 66.30.Lw, 61.72.Lk, 61.72.Mm (all)
  26. Yu.A. Il’inskii, R.V. Khokhlov “The Possibility of Observing Stimulated γ Radiation16 565–567 (1974)
    61.80.Ed, 61.72.Lk, 76.60.Cq, 71.70.Ej (all)
  27. Zh.I. Alferov “Semiconductor Devices with Heterojunctions15 834–835 (1973)
    73.40.Kp, 85.30.−z, 85.60.Dw (all)
  28. K.A. Valiev “Present-day Semiconductor Microelectronics and the Prospects of its Development16 281–283 (1973)
    85.40.−e, 85.30.−z, 73.40.Kp, 73.40.Lq (all)
  29. Yu.A. Osip’yan “Interaction of Dislocations with Current Carriers in Crystals14 543–544 (1972)
    61.72.Lk, 61.72.Hh, 62.20.Fe, 72.20.Jv, 61.72.Ji, 72.20.Fr (all)
  30. A.L. Suvorov “Field-ion microscopy of radiation defects in single crystals13 317–334 (1970)
    61.80.Hg, 61.80.Jh, 61.80.Fe, 61.72.Ji, 61.72.Lk (all)
  31. A.M. Kosevich “Dynamical theory of dislocations7 837–854 (1965)
    61.72.Lk, 61.72.Bb, 62.20.Dc (all)
  32. V.I. Fistul’, N.Z. Shvarts “TUNNEL DIODES5 430–459 (1962)
    85.30.Mn, 73.40.Gk, 73.40.Kp, 85.30.De (all)
  33. R.I. Garber, I.A. Gindin “Physics of the strength of crystalline materials3 41–77 (1960)
    62.20.Fe, 62.20.Mk, 81.40.Lm, 81.40.Np, 61.72.Lk, 61.72.Mm (all)
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