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On the 100th anniversary of the Ioffe Institute of the Russian Academy of Sciences


SiC-based electronics (100th anniversary of the Ioffe Institute)

, , , , , ,
Ioffe Institute, ul. Polytekhnicheskaya 26, St. Petersburg, 194021, Russian Federation

We review the history and modern state of silicon carbide and SiC-based devices. Main techniques for growing bulk SiC crystals and epitaxial SiC films are discussed. Epitaxial SiC structures used for post-growth processing are briefly reviewed. The state of the art achieved in developing SiC-devices is presented. The main problems that occur in developing SiC-equipment and prospects for designing and developing such equipment are analyzed.

Text can be downloaded in Russian. English translation is available here.
Keywords: silicon carbide, bulk crystals, sublimation, polytypes, lateral overgrowth, dislocations, high-voltage power diodes, high-voltage subnanosecond pulse diodes, thyristors, bipolar junction transistors, analytical models, computer simulations, color center, spin, sensorics, magnetic field, ODMR, graphene, two-dimensional materials, Raman spectroscopy
PACS: 81.05.ue, 81.10.−h, 85.30.−z (all)
DOI: 10.3367/UFNe.2018.10.038437
URL: https://ufn.ru/en/articles/2019/8/c/
Citation: Lebedev A A, Ivanov P A, Levinshtein M E, Mokhov E N, Nagalyuk S S, Anisimov A N, Baranov P G "SiC-based electronics (100th anniversary of the Ioffe Institute)" Phys. Usp. 62 754–794 (2019)
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Received: 4th, September 2018, revised: 1st, October 2018, 4th, October 2018

Оригинал: Лебедев А А, Иванов П А, Левинштейн М Е, Мохов Е Н, Нагалюк С С, Анисимов А Н, Баранов П Г «Электроника на основе SiC (к 100-летию Физико-технического института им. А.Ф. Иоффе РАН)» УФН 189 803–848 (2019); DOI: 10.3367/UFNr.2018.10.038437

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