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Issue 4, 2024
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PACS numbers

81.05.ue Graphene 81.10.−h Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation 85.30.−z Semiconductor devices
  1. K.V. Larionov, P.B. Sorokin “Investigation of atomically thin films: state of the art” 64 28–47 (2021)
    61.46.−w, 68.90.+g, 81.05.ue (all)
  2. A.A. Lebedev, P.A. Ivanov et al “SiC-based electronics (100th anniversary of the Ioffe Institute)” 62 754–794 (2019)
    81.05.ue, 81.10.−h, 85.30.−z (all)
  3. V.P. Filonenko, I.P. Zibrov et al “Diamond-based superhard composites: new synthesis approaches and application prospects” 62 207–212 (2019)
    81.10.−h, 89.20.Bb (all)
  4. E.A. Ekimov, M.V. Kondrin “Vacancy-impurity centers in diamond: perspectives of synthesis and applications” 60 539–558 (2017)
    33.15.Pw, 33.50.Dq, 42.50.Ex, 61.46.−w, 61.71.U-, 63.20.kp, 63.20.Pw, 78.55.−m, 81.10.−h (all)
  5. I. Akasaki “Fascinated journeys into blue light” 59 (5) (2016)
    42.72.Bj, 81.10.−h, 85.60.Dw (all)
  6. H. Amano “Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation” 59 (5) (2016)
    42.72.Bj, 81.10.−h, 85.60.Dw (all)
  7. Sh. Nakamura “Background story of the invention of efficient blue InGaN light emitting diodes” 59 (5) (2016)
    42.72.Bj, 81.10.−h, 85.60.Dw (all)
  8. V.L. Tsymbalenko “Amazing growth of helium crystal facets” 58 1059–1073 (2015)
    67.80.−s, 81.10.−h (all)
  9. M.Yu. Kagan, V.A. Mitskan, M.M. Korovushkin “Anomalous superconductivity and superfluidity in repulsive fermion systems” 58 733–761 (2015)
    67.85.−d, 74.20.−z, 74.20.Mn, 74.20.Rp, 74.25.Dw, 74.78.Fk, 81.05.ue (all)
  10. R.A. Khmelnitskii “Prospects for the synthesis of large single-crystal diamonds” 58 134–149 (2015)
    68.55.A−, 81.05.ug, 81.10.−h, 82.33.Ya (all)
  11. I.V. Antonova “Chemical vapor deposition growth of graphene on copper substrates: current trends” 56 1013–1020 (2013)
    68.65.Pq, 81.05.ue, 81.15.Gh, 81.16.Be (all)
  12. G.N. Makarov “Laser applications in nanotechnology: nanofabrication using laser ablation and laser nanolithography” 56 643–682 (2013)
    36.40.−c, 42.62.Fi, 61.46.−w, 81.05.ue, 81.07.−b, 81.16.−c, 81.16.Nd (all)
  13. P.B. Sorokin, L.A. Chernozatonskii “Graphene-based semiconductor nanostructures” 56 105–122 (2013)
    73.22.−f, 73.22.Pr, 73.61.Ey, 81.05.ue (all)
  14. “Physical properties of graphene (Scientific session of the Physical Sciences Division of the Russian Academy of Sciences, 28 March 2012)” 55 1140–1151 (2012)
    01.10.Fv, 65.80.Ck, 68.65.Pq, 72.15.Jf, 72.20.Pa, 72.80.Vp, 78.67.Wj, 81.05.ue (all)
  15. L.A. Falkovsky “Magnetooptics of graphene layers” 55 1140–1145 (2012)
    68.65.Pq, 78.67.Wj, 81.05.ue (all)
  16. A.A. Varlamov, A.V. Kavokin et al “Anomalous thermoelectric and thermomagnetic properties of graphene” 55 1146–1151 (2012)
    65.80.Ck, 72.15.Jf, 72.20.Pa, 72.80.Vp, 81.05.ue (all)
  17. “Modern problems in physical sciences (Scientific session of the Physical Sciences Division of the Russian Academy of Sciences, 26 October 2011)” 55 408–425 (2012)
    01.10.Fv, 42.25.−p, 42.30.−d, 42.60.Jf, 72.80.Vp, 73.20.−r, 75.30.−m, 75.50.−y, 81.05.Bx, 81.05.ue (all)
  18. S.V. Morozov “New effects in graphene with high carrier mobility” 55 408–412 (2012)
    72.80.Vp, 73.20.−r, 81.05.ue (all)
  19. W.S. Boyle “CCD — An extension of man’s view” 53 (12) (2010)
    01.30.Bb, 85.30.−z, 85.60.Gz (all)
  20. G.E. Smith “The invention and early history of the CCD” 53 (12) (2010)
    01.30.Bb, 85.30.−z, 85.60.Gz (all)
  21. T.V. Perevalov, V.A. Gritsenko “Application and electronic structure of high-permittivity dielectrics” 53 561–575 (2010)
    71.15.Mb, 77.55.D−, 85.30.−z (all)
  22. A.I. Vorob’eva “Equipment and techniques for carbon nanotube research” 53 257–277 (2010)
    61.48.De, 73.63.−b, 81.05.ue (all)
  23. A.I. Zhmakin “Physical aspects of cryobiology” 51 231–252 (2008)
    44.05.+e, 81.10.−h, 87.15.Aa, 87.54.Br (all)
  24. I.I. Taubkin “Photoinduced and thermal noise in semiconductor p-n junctions” 49 1289–1306 (2006)
    72.70.+m, 85.30.−z, 85.60.Dw (all)
  25. D.R. Khokhlov, A.V. Mitin et al “Scientific session of the Physical Sciences Division of the Russian Academy of Sciences (12 April 2006)” 49 955–959 (2006)
    01.10.Fv, 07.57.−c, 78.20.−e, 85.30.−z (all)
  26. I.V. Grekhov, G.A. Mesyats “Nanosecond semiconductor diodes for pulsed power switching” 48 703–712 (2005)
    84.70.+p, 85.30.−z, 85.30.Kk (all)
  27. N.A. Bendeliani “Hydrothermal growth of stishovite (SiO2)” 45 444–445 (2002)
    81.10.−h
  28. O.P. Pchelyakov “Molecular beam epitaxy: equipment, devices, technology” 43 923–925 (2000)
    07.07.−a, 81.15.Hi, 85.30.−z (all)
  29. V.A. Borodin “Development of new-generation equipment for crystal growth from melt. The RAS Experimental Factory of Scientific Engineering in the novel economic conditions” 43 929–931 (2000)
    07.90.+c, 81.10.−h, 81.10.Fq (all)
  30. V.S. Vavilov “Semiconductors in the modern world” 38 555–558 (1995)
    85.30.−z, 72.80.−r, 01.10.Fv (all)
  31. L.N. Kryzhanovskii “A history of the invention of and research on the coherer” 35 (4) 334–338 (1992)
    85.30.−z, 84.32.Ff (all)
  32. V.I. Aleksandrov, T.T. Basiev et al “Vyacheslav Vasil’evich Osiko (on his 60th birthday)” 35 (4) 339–340 (1992)
    01.60.+q, 81.10.−h (all)
  33. L.N. Dem’yanets “High-temperature superconductors: growth of single crystals” 34 (1) 36–73 (1991)
    74.72.−h, 74.62.Bf, 81.10.−h, 74.25.Dw, 61.66.Fn (all)
  34. V.B. Timofeev “Current state of semiconductor silicon technology and material science” 33 (6) 492–493 (1990)
    01.30.Vv, 85.40.−e, 81.10.−h, 81.15.−z (all)
  35. V.E. Golant, Yu.V. Gulyaev et al “Zhores Ivanovich Alferov (on his sixtieth birthday)” 33 (3) 257–258 (1990)
    01.60.+q, 85.30.−z (all)
  36. B.G. Idlis “Physics and technology of submicron structures” 32 834–834 (1989)
    01.30.Vv, 85.30.−z (all)
  37. Zh.I. Alferov, V.S. Vavilov et al “Viktor Leopol’dovich Bonch-Bruevich (Obituary)” 31 171–172 (1988)
    01.60.+q, 01.10.Cr, 01.10.Fv, 85.30.−z, 68.43.Mn, 82.65.+r (all)
  38. O.P. Zaskal’ko “Picosecond electronics and optoelectronics” 30 350–350 (1987)
    01.30.Vv, 01.30.Ee, 85.60.−q, 85.30.−z, 81.15.Gh, 81.15.Hi (all)
  39. A.P. Aleksandrov, Zh.I. Alferov et al “Vladimir Maksimovich Tuchkevich (on his eightieth birthday)” 27 980–982 (1984)
    01.60.+q, 85.30.−z (all)
  40. A.N. Georgobiani “Wide-band II-VI semiconductors and the prospects of their application” 17 424–437 (1974)
    73.40.Lq, 78.60.Fi, 85.30.−z, 61.72.Ji (all)
  41. Zh.I. Alferov “Semiconductor Devices with Heterojunctions” 15 834–835 (1973)
    73.40.Kp, 85.30.−z, 85.60.Dw (all)
  42. M.I. Elinson “Problems of Functional Microelectronics” 16 281–281 (1973)
    85.40.−e, 85.30.−z (all)
  43. K.A. Valiev “Present-day Semiconductor Microelectronics and the Prospects of its Development” 16 281–283 (1973)
    85.40.−e, 85.30.−z, 73.40.Kp, 73.40.Lq (all)
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