PACS numbers

81.05.ue Graphene 81.10.−h Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation 85.30.−z Semiconductor devices
  1. A.A. Lebedev, P.A. Ivanov et alSiC-based electronics (100th anniversary of the Ioffe Institute)62 754–794 (2019)
    81.05.ue, 81.10.−h, 85.30.−z (all)
  2. V.P. Filonenko, I.P. Zibrov et alDiamond-based superhard composites: new synthesis approaches and application prospects62 207–212 (2019)
    81.10.−h, 89.20.Bb (all)
  3. E.A. Ekimov, M.V. Kondrin “Vacancy-impurity centers in diamond: perspectives of synthesis and applications60 539–558 (2017)
    33.15.Pw, 33.50.Dq, 42.50.Ex, 61.46.−w, 61.71.U-, 63.20.kp, 63.20.Pw, 78.55.−m, 81.10.−h (all)
  4. I. Akasaki “Fascinated journeys into blue light59 (5) (2016)
    42.72.Bj, 81.10.−h, 85.60.Dw (all)
  5. H. Amano “Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation59 (5) (2016)
    42.72.Bj, 81.10.−h, 85.60.Dw (all)
  6. Sh. Nakamura “Background story of the invention of efficient blue InGaN light emitting diodes59 (5) (2016)
    42.72.Bj, 81.10.−h, 85.60.Dw (all)
  7. V.L. Tsymbalenko “Amazing growth of helium crystal facets58 1059–1073 (2015)
    67.80.−s, 81.10.−h (all)
  8. M.Yu. Kagan, V.A. Mitskan, M.M. Korovushkin “Anomalous superconductivity and superfluidity in repulsive fermion systems58 733–761 (2015)
    67.85.−d, 74.20.−z, 74.20.Mn, 74.20.Rp, 74.25.Dw, 74.78.Fk, 81.05.ue (all)
  9. R.A. Khmelnitskii “Prospects for the synthesis of large single-crystal diamonds58 134–149 (2015)
    68.55.A−, 81.05.ug, 81.10.−h, 82.33.Ya (all)
  10. I.V. Antonova “Chemical vapor deposition growth of graphene on copper substrates: current trends56 1013–1020 (2013)
    68.65.Pq, 81.05.ue, 81.15.Gh, 81.16.Be (all)
  11. G.N. Makarov “Laser applications in nanotechnology: nanofabrication using laser ablation and laser nanolithography56 643–682 (2013)
    36.40.−c, 42.62.Fi, 61.46.−w, 81.05.ue, 81.07.−b, 81.16.−c, 81.16.Nd (all)
  12. P.B. Sorokin, L.A. Chernozatonskii “Graphene-based semiconductor nanostructures56 105–122 (2013)
    73.22.−f, 73.22.Pr, 73.61.Ey, 81.05.ue (all)
  13. Physical properties of graphene (Scientific session of the Physical Sciences Division of the Russian Academy of Sciences, 28 March 2012)55 1140–1151 (2012)
    01.10.Fv, 65.80.Ck, 68.65.Pq, 72.15.Jf, 72.20.Pa, 72.80.Vp, 78.67.Wj, 81.05.ue (all)
  14. L.A. Falkovsky “Magnetooptics of graphene layers55 1140–1145 (2012)
    68.65.Pq, 78.67.Wj, 81.05.ue (all)
  15. A.A. Varlamov, A.V. Kavokin et alAnomalous thermoelectric and thermomagnetic properties of graphene55 1146–1151 (2012)
    65.80.Ck, 72.15.Jf, 72.20.Pa, 72.80.Vp, 81.05.ue (all)
  16. Modern problems in physical sciences (Scientific session of the Physical Sciences Division of the Russian Academy of Sciences, 26 October 2011)55 408–425 (2012)
    01.10.Fv, 42.25.−p, 42.30.−d, 42.60.Jf, 72.80.Vp, 73.20.−r, 75.30.−m, 75.50.−y, 81.05.Bx, 81.05.ue (all)
  17. S.V. Morozov “New effects in graphene with high carrier mobility55 408–412 (2012)
    72.80.Vp, 73.20.−r, 81.05.ue (all)
  18. W.S. Boyle “CCD — An extension of man’s view53 (12) (2010)
    01.30.Bb, 85.30.−z, 85.60.Gz (all)
  19. G.E. Smith “The invention and early history of the CCD53 (12) (2010)
    01.30.Bb, 85.30.−z, 85.60.Gz (all)
  20. T.V. Perevalov, V.A. Gritsenko “Application and electronic structure of high-permittivity dielectrics53 561–575 (2010)
    71.15.Mb, 77.55.D−, 85.30.−z (all)
  21. A.I. Vorob’eva “Equipment and techniques for carbon nanotube research53 257–277 (2010)
    61.48.De, 73.63.−b, 81.05.ue (all)
  22. A.I. Zhmakin “Physical aspects of cryobiology51 231–252 (2008)
    44.05.+e, 81.10.−h, 87.15.Aa, 87.54.Br (all)
  23. I.I. Taubkin “Photoinduced and thermal noise in semiconductor p-n junctions49 1289–1306 (2006)
    72.70.+m, 85.30.−z, 85.60.Dw (all)
  24. D.R. Khokhlov, A.V. Mitin et alScientific session of the Physical Sciences Division of the Russian Academy of Sciences (12 April 2006)49 955–959 (2006)
    01.10.Fv, 07.57.−c, 78.20.−e, 85.30.−z (all)
  25. I.V. Grekhov, G.A. Mesyats “Nanosecond semiconductor diodes for pulsed power switching48 703–712 (2005)
    84.70.+p, 85.30.−z, 85.30.Kk (all)
  26. N.A. Bendeliani “Hydrothermal growth of stishovite (SiO2)45 444–445 (2002)
    81.10.−h
  27. O.P. Pchelyakov “Molecular beam epitaxy: equipment, devices, technology43 923–925 (2000)
    07.07.−a, 81.15.Hi, 85.30.−z (all)
  28. V.A. Borodin “Development of new-generation equipment for crystal growth from melt. The RAS Experimental Factory of Scientific Engineering in the novel economic conditions43 929–931 (2000)
    07.90.+c, 81.10.−h, 81.10.Fq (all)
  29. V.S. Vavilov “Semiconductors in the modern world38 555–558 (1995)
    85.30.−z, 72.80.−r, 01.10.Fv (all)
  30. L.N. Kryzhanovskii “A history of the invention of and research on the coherer35 (4) 334–338 (1992)
    85.30.−z, 84.32.Ff (all)
  31. V.I. Aleksandrov, T.T. Basiev et alVyacheslav Vasil’evich Osiko (on his 60th birthday)35 (4) 339–340 (1992)
    01.60.+q, 81.10.−h (all)
  32. L.N. Dem’yanets “High-temperature superconductors: growth of single crystals34 (1) 36–73 (1991)
    74.72.−h, 74.62.Bf, 81.10.−h, 74.25.Dw, 61.66.Fn (all)
  33. V.B. Timofeev “Current state of semiconductor silicon technology and material science33 (6) 492–493 (1990)
    01.30.Vv, 85.40.−e, 81.10.−h, 81.15.−z (all)
  34. V.E. Golant, Yu.V. Gulyaev et alZhores Ivanovich Alferov (on his sixtieth birthday)33 (3) 257–258 (1990)
    01.60.+q, 85.30.−z (all)
  35. B.G. Idlis “Physics and technology of submicron structures32 834–834 (1989)
    01.30.Vv, 85.30.−z (all)
  36. Zh.I. Alferov, V.S. Vavilov et alViktor Leopol’dovich Bonch-Bruevich (Obituary)31 171–172 (1988)
    01.60.+q, 01.10.Cr, 01.10.Fv, 85.30.−z, 68.43.Mn, 82.65.+r (all)
  37. O.P. Zaskal’ko “Picosecond electronics and optoelectronics30 350–350 (1987)
    01.30.Vv, 01.30.Ee, 85.60.−q, 85.30.−z, 81.15.Gh, 81.15.Hi (all)
  38. A.P. Aleksandrov, Zh.I. Alferov et alVladimir Maksimovich Tuchkevich (on his eightieth birthday)27 980–982 (1984)
    01.60.+q, 85.30.−z (all)
  39. A.N. Georgobiani “Wide-band II-VI semiconductors and the prospects of their application17 424–437 (1974)
    73.40.Lq, 78.60.Fi, 85.30.−z, 61.72.Ji (all)
  40. Zh.I. Alferov “Semiconductor Devices with Heterojunctions15 834–835 (1973)
    73.40.Kp, 85.30.−z, 85.60.Dw (all)
  41. M.I. Elinson “Problems of Functional Microelectronics16 281–281 (1973)
    85.40.−e, 85.30.−z (all)
  42. K.A. Valiev “Present-day Semiconductor Microelectronics and the Prospects of its Development16 281–283 (1973)
    85.40.−e, 85.30.−z, 73.40.Kp, 73.40.Lq (all)
  43. K.V. Larionov, P.B. Sorokin “Atomically thin films: current progress”, accepted
    61.46.+w, 61.46.−w, 81.05.ue, 68.90.+g (all)
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