Issues

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2001

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July

  

Reviews of topical problems


Silicon-germanium epilayers: physical fundamentals of growing strained and fully relaxed heterostructures

, ,
Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation

GexSi1-x/Si heterostructures involving two elemental semiconductors are becoming an important element in microelectronics. Their epitaxial growth requires a detailed knowledge of the mechanisms of elastic and plastic deformations in continuous and island films both at the early stages of epitaxy and during the subsequent heat treatment. The present work is a systematic review of current ideas on the fundamental physical mechanisms governing the formation of elastically strained and plastically relaxed GexSi1- x/Si heterocompositions. In particular, the use of compliant and soft substrates and the epitaxial synthesis of nanometer-sized islands (’quantum dots’) are discussed.

Text can be downloaded in Russian. English translation is available on IOP Science.
PACS: 61.72.Lk, 62.25.+g, 73.40.Kp, 81.15.−z (all)
DOI: 10.1070/PU2001v044n07ABEH000879
URL: https://ufn.ru/en/articles/2001/7/a/
Citation: Bolkhovityanov Yu B, Pchelyakov O P, Chikichev S I "Silicon-germanium epilayers: physical fundamentals of growing strained and fully relaxed heterostructures" Phys. Usp. 44 655–680 (2001)
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Оригинал: Болховитянов Ю Б, Пчеляков О П, Чикичев С И «Кремний-германиевые эпитаксиальные пленки: физические основы получения напряженных и полностью релаксированных гетероструктур» УФН 171 689–715 (2001); DOI: 10.3367/UFNr.0171.200107a.0689

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