PACS numbers

72.70.+m Noise processes and phenomena 85.30.−z Semiconductor devices 85.60.Dw Photodiodes; phototransistors; photoresistors
  1. D.S. Smirnov, V.N. Mantsevich, M.M. Glazov “Theory of optically detected spin noise in nanosystems64 923–946 (2021)
    72.70.+m, 78.67.−n (all)
  2. A.A. Lebedev, P.A. Ivanov et alSiC-based electronics (100th anniversary of the Ioffe Institute)62 754–794 (2019)
    81.05.ue, 81.10.−h, 85.30.−z (all)
  3. I. Akasaki “Fascinated journeys into blue light59 (5) (2016)
    42.72.Bj, 81.10.−h, 85.60.Dw (all)
  4. H. Amano “Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation59 (5) (2016)
    42.72.Bj, 81.10.−h, 85.60.Dw (all)
  5. Sh. Nakamura “Background story of the invention of efficient blue InGaN light emitting diodes59 (5) (2016)
    42.72.Bj, 81.10.−h, 85.60.Dw (all)
  6. A.G. Vitukhnovsky “Organic photonics: achievements and disappointments56 623–627 (2013)
    42.70.Jk, 85.60.Dw, 85.60.Pg (all)
  7. W.S. Boyle “CCD — An extension of man’s view53 (12) (2010)
    01.30.Bb, 85.30.−z, 85.60.Gz (all)
  8. G.E. Smith “The invention and early history of the CCD53 (12) (2010)
    01.30.Bb, 85.30.−z, 85.60.Gz (all)
  9. T.V. Perevalov, V.A. Gritsenko “Application and electronic structure of high-permittivity dielectrics53 561–575 (2010)
    71.15.Mb, 77.55.D−, 85.30.−z (all)
  10. I.I. Taubkin “Photoinduced and thermal noise in semiconductor p-n junctions49 1289–1306 (2006)
    72.70.+m, 85.30.−z, 85.60.Dw (all)
  11. D.R. Khokhlov, A.V. Mitin et alScientific session of the Physical Sciences Division of the Russian Academy of Sciences (12 April 2006)49 955–959 (2006)
    01.10.Fv, 07.57.−c, 78.20.−e, 85.30.−z (all)
  12. I.V. Grekhov, G.A. Mesyats “Nanosecond semiconductor diodes for pulsed power switching48 703–712 (2005)
    84.70.+p, 85.30.−z, 85.30.Kk (all)
  13. G.P. Zhigal’skii “Nonequilibrium 1/f γ noise in conducting films and contacts46 449–471 (2003)
    05.40.Ca, 72.70.+m, 73.50.Td, 85.40.Qx (all)
  14. O.P. Pchelyakov “Molecular beam epitaxy: equipment, devices, technology43 923–925 (2000)
    07.07.−a, 81.15.Hi, 85.30.−z (all)
  15. S.I. Dorozhkin, M.O. Dorokhova et alCapacitance spectroscopy of the fractional quantum Hall effect41 127–131 (1998)
    72.70.+m, 73.40.Hm, 73.50.Td (all)
  16. S.V. Iordanskii “Non-singular vortex-skyrmions in a two-dimensional electron system41 131–134 (1998)
    72.70.+m, 73.40.Hm, 73.50.Td (all)
  17. W. Apel, Yu.A. Bychkov “Microscopic derivation of the effective Lagrangian for skyrmions in an interacting two-dimensional electron gas at small g-factor41 134–138 (1998)
    72.70.+m, 73.40.Hm, 73.50.Td (all)
  18. V.T. Dolgopolov, A.A. Shashkin et alNonlinear screening, and spin and cyclotron gaps in the 2D electron gas of GaAs/AlGaAs heterojunctions41 138–141 (1998)
    72.70.+m, 73.40.Hm, 73.50.Td (all)
  19. L.S. Levitov, A.V. Shitov, B.I. Halperin “Effective action and Green’s function for a compressible QH edge state41 141–145 (1998)
    72.70.+m, 73.40.Hm, 73.50.Td (all)
  20. G.B. Lesovik “Recording zero-point current and voltage fluctuations41 145–149 (1998)
    72.70.+m, 73.40.Hm, 73.50.Td (all)
  21. Ya.M. Blanter, S.A. van Langen, M. Buttiker “Exchange effects in shot noise in multi-terminal devices41 149–152 (1998)
    72.70.+m, 73.40.Hm, 73.50.Td (all)
  22. G.P. Zhigal’skii “1/f noise and nonlinear effects in thin metal films40 599–622 (1997)
    72.70.+m, 73.50.Td (all)
  23. V.S. Vavilov “Semiconductors in the modern world38 555–558 (1995)
    85.30.−z, 72.80.−r, 01.10.Fv (all)
  24. L.N. Kryzhanovskii “A history of the invention of and research on the coherer35 (4) 334–338 (1992)
    85.30.−z, 84.32.Ff (all)
  25. V.V. Maier, R.V. Maier “Demonstration of the acoustic Doppler effect34 (3) 262–264 (1991)
    43.28.Py, 43.38.Kb, 43.66.Lj, 85.60.Jb, 85.60.Dw (all)
  26. V.V. Osipov “Noise in physical systems33 (12) 1081–1082 (1990)
    72.70.+m
  27. V.E. Golant, Yu.V. Gulyaev et alZhores Ivanovich Alferov (on his sixtieth birthday)33 (3) 257–258 (1990)
    01.60.+q, 85.30.−z (all)
  28. B.G. Idlis “Physics and technology of submicron structures32 834–834 (1989)
    01.30.Vv, 85.30.−z (all)
  29. Zh.I. Alferov, V.S. Vavilov et alViktor Leopol’dovich Bonch-Bruevich (Obituary)31 171–172 (1988)
    01.60.+q, 01.10.Cr, 01.10.Fv, 85.30.−z, 68.43.Mn, 82.65.+r (all)
  30. O.P. Zaskal’ko “Picosecond electronics and optoelectronics30 350–350 (1987)
    01.30.Vv, 01.30.Ee, 85.60.−q, 85.30.−z, 81.15.Gh, 81.15.Hi (all)
  31. Sh.M. Kogan “Low-frequency current noise with a 1/f spectrum in solids28 170–195 (1985)
    72.70.+m
  32. A.P. Aleksandrov, Zh.I. Alferov et alVladimir Maksimovich Tuchkevich (on his eightieth birthday)27 980–982 (1984)
    01.60.+q, 85.30.−z (all)
  33. G.N. Bochkov, Yu.E. Kuzovlev “New aspects in 1/f noise studies26 829–844 (1983)
    72.70.+m, 05.40.+j
  34. Sh.M. Kogan “New experimental investigations of the 1/f noise mechanism20 763–766 (1977)
    72.70.+m, 73.60.Dt
  35. A.N. Georgobiani “Wide-band II-VI semiconductors and the prospects of their application17 424–437 (1974)
    73.40.Lq, 78.60.Fi, 85.30.−z, 61.72.Ji (all)
  36. Zh.I. Alferov “Semiconductor Devices with Heterojunctions15 834–835 (1973)
    73.40.Kp, 85.30.−z, 85.60.Dw (all)
  37. M.I. Elinson “Problems of Functional Microelectronics16 281–281 (1973)
    85.40.−e, 85.30.−z (all)
  38. K.A. Valiev “Present-day Semiconductor Microelectronics and the Prospects of its Development16 281–283 (1973)
    85.40.−e, 85.30.−z, 73.40.Kp, 73.40.Lq (all)
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