Application and electronic structure of high-permittivity dielectrics
Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Lavrent'eva 13, Novosibirsk, 630090, Russian Federation
Major applications of high-permittivity dielectric materials in silicon devices are reviewed. The basics and software implementations of the electron density functional method are considered. Results of first-principle calculations of the electronic structure are analyzed for the three most important and promising high-permittivity dielectrics, Al2O3, HfO2 and TiO2.