PACS numbers

71.15.Mb Density functional theory, local density approximation, gradient and other corrections 77.55.D− High-permittivity gate dielectric films 85.30.−z Semiconductor devices
  1. S.E. Kuratov, D.S. Shidlovski et alTwo scales of quantum effects in a mesoscopic system of degenerate electrons64 (8) (2021)
    31.15.E−, 71.10.Ca, 71.15.Mb, 73.20.−r (all)
  2. A.A. Lebedev, P.A. Ivanov et alSiC-based electronics (100th anniversary of the Ioffe Institute)62 754–794 (2019)
    81.05.ue, 81.10.−h, 85.30.−z (all)
  3. R.A. Andrievski “High-melting point compounds: new approaches and new results60 276–289 (2017)
    61.46.−w, 61.66.Fn, 71.15.−m, 71.15.Mb (all)
  4. R.S. Berry, B.M. Smirnov “Modeling of configurational transitions in atomic systems56 973–998 (2013)
    36.40.−c, 36.40.Ei, 64.70.D−, 71.15.Mb, 81.16.Hc, 82.30.−b (all)
  5. G.V. Shpatakovskaya “Semiclassical model of the structure of matter55 429–464 (2012), 36.40.Cg, 52.25.Kn, 64.10.+h, 71.10.−w, 71.15.Mb (all)
  6. V.A. Gritsenko “Electronic structure of silicon nitride55 498–507 (2012)
    71.15.Mb, 71.23.−k, 77.22.−d, 77.55.df, 77.84.Bw, 78.20.−e (all)
  7. W.S. Boyle “CCD — An extension of man’s view53 (12) (2010)
    01.30.Bb, 85.30.−z, 85.60.Gz (all)
  8. G.E. Smith “The invention and early history of the CCD53 (12) (2010)
    01.30.Bb, 85.30.−z, 85.60.Gz (all)
  9. T.V. Perevalov, V.A. Gritsenko “Application and electronic structure of high-permittivity dielectrics53 561–575 (2010)
    71.15.Mb, 77.55.D−, 85.30.−z (all)
  10. E.G. Maksimov, A.E. Karakozov “On nonadiabatic effects in phonon spectra of metals51 535–549 (2008)
    71.15.Mb, 74.20.−z, 74.72.−h (all)
  11. E.G. Maksimov, O.V. Dolgov “A note on the possible mechanisms of high-temperature superconductivity50 933–937 (2007)
    71.10.Ay, 71.15.Mb, 74.20.−z, 74.72.−h (all)
  12. I.I. Taubkin “Photoinduced and thermal noise in semiconductor p-n junctions49 1289–1306 (2006)
    72.70.+m, 85.30.−z, 85.60.Dw (all)
  13. D.R. Khokhlov, A.V. Mitin et alScientific session of the Physical Sciences Division of the Russian Academy of Sciences (12 April 2006)49 955–959 (2006)
    01.10.Fv, 07.57.−c, 78.20.−e, 85.30.−z (all)
  14. E.G. Maksimov, M.V. Magnitskaya, V.E. Fortov “Non-simple behavior of simple metals at high pressure48 761–780 (2005)
    61.50.Ah, 62.50.+p, 61.66.−f, 71.15.Mb (all)
  15. I.V. Grekhov, G.A. Mesyats “Nanosecond semiconductor diodes for pulsed power switching48 703–712 (2005)
    84.70.+p, 85.30.−z, 85.30.Kk (all)
  16. E.G. Maksimov, V.I. Zinenko, N.G. Zamkova “Ab initio calculations of the physical properties of ionic crystals47 1075–1099 (2004)
    61.50.Ah, 63.20.Dj, 71.15.Mb (all)
  17. O.P. Pchelyakov “Molecular beam epitaxy: equipment, devices, technology43 923–925 (2000)
    07.07.−a, 81.15.Hi, 85.30.−z (all)
  18. V.S. Vavilov “Semiconductors in the modern world38 555–558 (1995)
    85.30.−z, 72.80.−r, 01.10.Fv (all)
  19. L.N. Kryzhanovskii “A history of the invention of and research on the coherer35 (4) 334–338 (1992)
    85.30.−z, 84.32.Ff (all)
  20. V.E. Golant, Yu.V. Gulyaev et alZhores Ivanovich Alferov (on his sixtieth birthday)33 (3) 257–258 (1990)
    01.60.+q, 85.30.−z (all)
  21. B.G. Idlis “Physics and technology of submicron structures32 834–834 (1989)
    01.30.Vv, 85.30.−z (all)
  22. Zh.I. Alferov, V.S. Vavilov et alViktor Leopol’dovich Bonch-Bruevich (Obituary)31 171–172 (1988)
    01.60.+q, 01.10.Cr, 01.10.Fv, 85.30.−z, 68.43.Mn, 82.65.+r (all)
  23. O.P. Zaskal’ko “Picosecond electronics and optoelectronics30 350–350 (1987)
    01.30.Vv, 01.30.Ee, 85.60.−q, 85.30.−z, 81.15.Gh, 81.15.Hi (all)
  24. A.P. Aleksandrov, Zh.I. Alferov et alVladimir Maksimovich Tuchkevich (on his eightieth birthday)27 980–982 (1984)
    01.60.+q, 85.30.−z (all)
  25. E.G. Maksimov “Use of computers in the physics of the condensed state.27 458–459 (1984)
    71.15.Dx, 71.15.Mb, 71.20.−b, 71.45.Gm, 72.15.Qm (all)
  26. A.N. Georgobiani “Wide-band II-VI semiconductors and the prospects of their application17 424–437 (1974)
    73.40.Lq, 78.60.Fi, 85.30.−z, 61.72.Ji (all)
  27. Zh.I. Alferov “Semiconductor Devices with Heterojunctions15 834–835 (1973)
    73.40.Kp, 85.30.−z, 85.60.Dw (all)
  28. M.I. Elinson “Problems of Functional Microelectronics16 281–281 (1973)
    85.40.−e, 85.30.−z (all)
  29. K.A. Valiev “Present-day Semiconductor Microelectronics and the Prospects of its Development16 281–283 (1973)
    85.40.−e, 85.30.−z, 73.40.Kp, 73.40.Lq (all)
  30. A.I. Voropinov, G.M. Gandel’man, V.G. Podval’nyi “Electronic energy spectra and the equation of state of solids at high pressures and temperatures13 56–72 (1970)
    71.20.Be, 64.30.+t, 62.50.+p, 71.20.Dg, 71.15.Mb (all)
  31. N.N. Bogolyubov “The compensation principle and the self-consistent field method2 236–254 (1959)
    71.15.Mb, 74.20.−z, 74.25.Kc, 71.45.Gm, 71.15.Ap (all)
  32. H.E. Norman, I.M. Saitov “Plasma phase transition”, accepted
    31.15.E−, 71.15.Mb, 52.65.−y, 52.25.Mq, 64.70.Ja, 52.50.Lp (all)
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