71.15.Mb Density functional theory, local density approximation, gradient and other corrections 77.55.D− High-permittivity gate dielectric films 85.30.−z Semiconductor devices

H.E. Norman, I.M. Saitov “Plasma phase transition” 64 1094–1124 (2021)
31.15.E−, 52.25.Mq, 52.50.Lp, 52.65.−y, 64.70.Ja, 71.15.Mb (all)
S.E. Kuratov, D.S. Shidlovski et al “Two scales of quantum effects in a mesoscopic system of degenerate electrons” 64 836–851 (2021)
31.15.E−, 71.10.Ca, 71.15.Mb, 73.20.−r (all)
A.A. Lebedev, P.A. Ivanov et al “SiC-based electronics (100th anniversary of the Ioffe Institute)” 62 754–794 (2019)
81.05.ue, 81.10.−h, 85.30.−z (all)
R.A. Andrievski “High-melting point compounds: new approaches and new results” 60 276–289 (2017)
61.46.−w, 61.66.Fn, 71.15.−m, 71.15.Mb (all)
R.S. Berry, B.M. Smirnov “Modeling of configurational transitions in atomic systems” 56 973–998 (2013)
36.40.−c, 36.40.Ei, 64.70.D−, 71.15.Mb, 81.16.Hc, 82.30.−b (all)
G.V. Shpatakovskaya “Semiclassical model of the structure of matter” 55 429–464 (2012)
31.15.bt, 36.40.Cg, 52.25.Kn, 64.10.+h, 71.10.−w, 71.15.Mb (all)
V.A. Gritsenko “Electronic structure of silicon nitride” 55 498–507 (2012)
71.15.Mb, 71.23.−k, 77.22.−d, 77.55.df, 77.84.Bw, 78.20.−e (all)
W.S. Boyle “CCD — An extension of man’s view” 53 (12) (2010)
01.30.Bb, 85.30.−z, 85.60.Gz (all)
G.E. Smith “The invention and early history of the CCD” 53 (12) (2010)
01.30.Bb, 85.30.−z, 85.60.Gz (all)
T.V. Perevalov, V.A. Gritsenko “Application and electronic structure of high-permittivity dielectrics” 53 561–575 (2010)
71.15.Mb, 77.55.D−, 85.30.−z (all)
E.G. Maksimov, A.E. Karakozov “On nonadiabatic effects in phonon spectra of metals” 51 535–549 (2008)
71.15.Mb, 74.20.−z, 74.72.−h (all)
E.G. Maksimov, O.V. Dolgov “A note on the possible mechanisms of high-temperature superconductivity” 50 933–937 (2007)
71.10.Ay, 71.15.Mb, 74.20.−z, 74.72.−h (all)
I.I. Taubkin “Photoinduced and thermal noise in semiconductor p-n junctions” 49 1289–1306 (2006)
72.70.+m, 85.30.−z, 85.60.Dw (all)
D.R. Khokhlov, A.V. Mitin et al “Scientific session of the Physical Sciences Division of the Russian Academy of Sciences (12 April 2006)” 49 955–959 (2006)
01.10.Fv, 07.57.−c, 78.20.−e, 85.30.−z (all)
E.G. Maksimov, M.V. Magnitskaya, V.E. Fortov “Non-simple behavior of simple metals at high pressure” 48 761–780 (2005)
61.50.Ah, 62.50.+p, 61.66.−f, 71.15.Mb (all)
I.V. Grekhov, G.A. Mesyats “Nanosecond semiconductor diodes for pulsed power switching” 48 703–712 (2005)
84.70.+p, 85.30.−z, 85.30.Kk (all)
E.G. Maksimov, V.I. Zinenko, N.G. Zamkova “Ab initio calculations of the physical properties of ionic crystals” 47 1075–1099 (2004)
61.50.Ah, 63.20.Dj, 71.15.Mb (all)
O.P. Pchelyakov “Molecular beam epitaxy: equipment, devices, technology” 43 923–925 (2000)
07.07.−a, 81.15.Hi, 85.30.−z (all)
V.S. Vavilov “Semiconductors in the modern world” 38 555–558 (1995)
85.30.−z, 72.80.−r, 01.10.Fv (all)
L.N. Kryzhanovskii “A history of the invention of and research on the coherer” 35 (4) 334–338 (1992)
85.30.−z, 84.32.Ff (all)
V.E. Golant, Yu.V. Gulyaev et al “Zhores Ivanovich Alferov (on his sixtieth birthday)” 33 (3) 257–258 (1990)
01.60.+q, 85.30.−z (all)
B.G. Idlis “Physics and technology of submicron structures” 32 834–834 (1989)
01.30.Vv, 85.30.−z (all)
Zh.I. Alferov, V.S. Vavilov et al “Viktor Leopol’dovich Bonch-Bruevich (Obituary)” 31 171–172 (1988)
01.60.+q, 01.10.Cr, 01.10.Fv, 85.30.−z, 68.43.Mn, 82.65.+r (all)
O.P. Zaskal’ko “Picosecond electronics and optoelectronics” 30 350–350 (1987)
01.30.Vv, 01.30.Ee, 85.60.−q, 85.30.−z, 81.15.Gh, 81.15.Hi (all)
A.P. Aleksandrov, Zh.I. Alferov et al “Vladimir Maksimovich Tuchkevich (on his eightieth birthday)” 27 980–982 (1984)
01.60.+q, 85.30.−z (all)
E.G. Maksimov “Use of computers in the physics of the condensed state.” 27 458–459 (1984)
71.15.Dx, 71.15.Mb, 71.20.−b, 71.45.Gm, 72.15.Qm (all)
A.N. Georgobiani “Wide-band II-VI semiconductors and the prospects of their application” 17 424–437 (1974)
73.40.Lq, 78.60.Fi, 85.30.−z, 61.72.Ji (all)
Zh.I. Alferov “Semiconductor Devices with Heterojunctions” 15 834–835 (1973)
73.40.Kp, 85.30.−z, 85.60.Dw (all)
M.I. Elinson “Problems of Functional Microelectronics” 16 281–281 (1973)
85.40.−e, 85.30.−z (all)
K.A. Valiev “Present-day Semiconductor Microelectronics and the Prospects of its Development” 16 281–283 (1973)
85.40.−e, 85.30.−z, 73.40.Kp, 73.40.Lq (all)
A.I. Voropinov, G.M. Gandel’man, V.G. Podval’nyi “Electronic energy spectra and the equation of state of solids at high pressures and temperatures” 13 56–72 (1970)
71.20.Be, 64.30.+t, 62.50.+p, 71.20.Dg, 71.15.Mb (all)
N.N. Bogolyubov “The compensation principle and the self-consistent field method” 2 236–254 (1959)
71.15.Mb, 74.20.−z, 74.25.Kc, 71.45.Gm, 71.15.Ap (all)

PACS numbers