PACS numbers

73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
  1. Yu.B. Bolkhovityanov, O.P. Pchelyakov, S.I. Chikichev “Silicon-germanium epilayers: physical fundamentals of growing strained and fully relaxed heterostructuresPhys. Usp. 44 655–680 (2001)
    61.72.Lk, 62.25.+g, 73.40.Kp, 81.15.−z (all)
  2. E.V. Devyatov, A.A. Shashkin et alTunneling measurements of the Coulomb pseudogap in a two-dimensional electron system in a quantizing magnetic fieldPhys. Usp. 43 285–288 (2000)
    72.20.My, 73.40.Kp (all)
  3. V.A. Volkov, E.E. Takhtamirov “Dynamics of an electron with space-dependent mass and the effective-mass method for semiconductor heterostructuresPhys. Usp. 40 1071–1075 (1997)
    71.25.Cx, 73.20.Dx, 73.40.Kp
  4. A.P. Silin “High magnetic fields in semiconductor physicsSov. Phys. Usp. 31 784–784 (1988)
    01.30.Vv, 72.20.Ht, 73.43.−f, 73.40.Kp, 73.63.Hs, 72.20.My (all)
  5. I.V. Kukushkin, S.V. Meshkov, V.B. Timofeev “Two-dimensional electron density of states in a transverse magnetic fieldSov. Phys. Usp. 31 511–534 (1988)
    73.20.At, 73.40.Qv, 73.40.Kp, 71.70.Di, 73.40.Cg, 72.20.Jv (all)
  6. Zh.I. Alferov “Semiconductor Devices with HeterojunctionsSov. Phys. Usp. 15 834–835 (1973)
    73.40.Kp, 85.30.−z, 85.60.Dw (all)
  7. K.A. Valiev “Present-day Semiconductor Microelectronics and the Prospects of its DevelopmentSov. Phys. Usp. 16 281–283 (1973)
    85.40.−e, 85.30.−z, 73.40.Kp, 73.40.Lq (all)
  8. V.I. Fistul’, N.Z. Shvarts “TUNNEL DIODESSov. Phys. Usp. 5 430–459 (1962)
    85.30.Mn, 73.40.Gk, 73.40.Kp, 85.30.De (all)
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