Nanosecond semiconductor diodes for pulsed power switching

 a,  b
a Ioffe Institute, ul. Polytekhnicheskaya 26, St. Petersburg, 194021, Russian Federation
b Lebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation

The development of semiconductor-based nano- and subnanosecond high current breakers is crucial for advancing modern research in experimental physics and radioelectronics, particularly with increasing power (to 1010 W) and repetition rate (to 104 Hz) of impulse devices. Highlighted in this review are two types of silicon diodes: drift step recovery diodes (DSRDs) and SOS diodes with the attainable current densities and switched-off powers being 102 A cm-2 and 108 W in the former case, and 105 A cm-2 and 1010 W in the latter. The possibility of utilizing not only monocrystalline silicon (as in DSRDs and SOS diodes) for the base material but also monocrystalline silicon carbide is examined.

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Fulltext is also available at DOI: 10.1070/PU2005v048n07ABEH002471
PACS: 84.70.+p, 85.30.−z, 85.30.Kk (all)
DOI: 10.1070/PU2005v048n07ABEH002471
Citation: Grekhov I V, Mesyats G A "Nanosecond semiconductor diodes for pulsed power switching" Phys. Usp. 48 703–712 (2005)
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Оригинал: Грехов И В, Месяц Г А «Полупроводниковые наносекундные диоды для размыкания больших токов» УФН 175 735–744 (2005); DOI: 10.3367/UFNr.0175.200507c.0735

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