PACS numbers

07.07.−a General equipment 81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy 85.30.−z Semiconductor devices
  1. W.S. Boyle “CCD — An extension of man’s view53 (12) (2010)
    01.30.Bb, 85.30.−z, 85.60.Gz (all)
  2. G.E. Smith “The invention and early history of the CCD53 (12) (2010)
    01.30.Bb, 85.30.−z, 85.60.Gz (all)
  3. T.V. Perevalov, V.A. Gritsenko “Application and electronic structure of high-permittivity dielectrics53 561–575 (2010)
    71.15.Mb, 77.55.D−, 85.30.−z (all)
  4. L.V. Arapkina, V.A. Yuryev “Classification of Ge hut clusters in arrays formed by molecular beam epitaxy at low temperatures on the Si(001) surface53 279–290 (2010)
    68.37.Ef, 81.07.Ta, 81.15.Hi (all)
  5. V.I. Balykin, A.N. Ryabtsev et alOn the 40th anniversary of the Institute of Spectroscopy of the Russian Academy of Sciences (Scientific session of the Physical Sciences Division of the Russian Academy of Sciences, 8 October 2008)52 275–309 (2009)
    03.75.−b, 03.75.Hh, 05.30.Jp, 07.07.−a, 32.30.−r, 32.30.Jc, 33.20.−t, 36.40.−c, 37.20.+j, 42.82.Cr, 61.43.−j, 63.20.−e, 63.50.−x, 67.25.dw, 71.35.Lk, 71.36.+c, 78.30.−j, 78.47.−p, 78.55.−m, 81.07.−b,, 87.64.−t, 95.30.Ky, 97.10.−q (all)
  6. O.N. Kompanets, Yu.M. Yevdokimov “Optical biosensors of genotoxicants based on DNA nanoconstructions and portable dichrometers52 304–309 (2009)
    07.07.−a, 87.64.−t, (all)
  7. I.I. Taubkin “Photoinduced and thermal noise in semiconductor p-n junctions49 1289–1306 (2006)
    72.70.+m, 85.30.−z, 85.60.Dw (all)
  8. D.R. Khokhlov, A.V. Mitin et alScientific session of the Physical Sciences Division of the Russian Academy of Sciences (12 April 2006)49 955–959 (2006)
    01.10.Fv, 07.57.−c, 78.20.−e, 85.30.−z (all)
  9. I.V. Grekhov, G.A. Mesyats “Nanosecond semiconductor diodes for pulsed power switching48 703–712 (2005)
    84.70.+p, 85.30.−z, 85.30.Kk (all)
  10. O.P. Pchelyakov “Molecular beam epitaxy: equipment, devices, technology43 923–925 (2000)
    07.07.−a, 81.15.Hi, 85.30.−z (all)
  11. A.V. Latyshev, A.L. Aseev “Monatomic steps on silicon surfaces41 1015–1023 (1998)
    68.35.p, 68.55.a, 81.15.Hi
  12. V.S. Vavilov “Semiconductors in the modern world38 555–558 (1995)
    85.30.−z, 72.80.−r, 01.10.Fv (all)
  13. L.N. Kryzhanovskii “A history of the invention of and research on the coherer35 (4) 334–338 (1992)
    85.30.−z, 84.32.Ff (all)
  14. V.E. Golant, Yu.V. Gulyaev et alZhores Ivanovich Alferov (on his sixtieth birthday)33 (3) 257–258 (1990)
    01.60.+q, 85.30.−z (all)
  15. B.G. Idlis “Physics and technology of submicron structures32 834–834 (1989)
    01.30.Vv, 85.30.−z (all)
  16. Zh.I. Alferov, V.S. Vavilov et alViktor Leopol’dovich Bonch-Bruevich (Obituary)31 171–172 (1988)
    01.60.+q, 01.10.Cr, 01.10.Fv, 85.30.−z, 68.43.Mn, 82.65.+r (all)
  17. O.P. Zaskal’ko “Picosecond electronics and optoelectronics30 350–350 (1987)
    01.30.Vv, 01.30.Ee, 85.60.−q, 85.30.−z, 81.15.Gh, 81.15.Hi (all)
  18. A.P. Aleksandrov, Zh.I. Alferov et alVladimir Maksimovich Tuchkevich (on his eightieth birthday)27 980–982 (1984)
    01.60.+q, 85.30.−z (all)
  19. A.N. Georgobiani “Wide-band II-VI semiconductors and the prospects of their application17 424–437 (1974)
    73.40.Lq, 78.60.Fi, 85.30.−z, 61.72.Ji (all)
  20. Zh.I. Alferov “Semiconductor Devices with Heterojunctions15 834–835 (1973)
    73.40.Kp, 85.30.−z, 85.60.Dw (all)
  21. M.I. Elinson “Problems of Functional Microelectronics16 281–281 (1973)
    85.40.−e, 85.30.−z (all)
  22. K.A. Valiev “Present-day Semiconductor Microelectronics and the Prospects of its Development16 281–283 (1973)
    85.40.−e, 85.30.−z, 73.40.Kp, 73.40.Lq (all)
  23. B.Sh. Perkal’skis “A simple demonstration of the addition of harmonic oscillations6 325–325 (1963)
  24. V.A. Trofimov, V.V. Semenov “Several lecture demonstrations6 328–331 (1963)
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