73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions 73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions 85.30.−z Semiconductor devices 85.40.−e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

A.A. Lebedev, P.A. Ivanov et al “SiC-based electronics (100th anniversary of the Ioffe Institute)” 62 754–794 (2019)
81.05.ue, 81.10.−h, 85.30.−z (all)
P.V. Ratnikov, A.P. Silin “Two-dimensional graphene electronics: current status and prospects” 61 1139–1174 (2018)
68.65.Cd, 68.65.Pq, 73.21.Fg, 73.40.Gk, 73.50.−h, 85.30.Tv, 85.40.−e, 85.60.−q, 85.65.+h (all)
O.A. Pankratov “Understanding surface states of topological insulators” 61 1116–1126 (2018)
73.20.−r, 73.40.Lq, 73.43.Cd (all)
A.N. Aleshin “Organic optoelectronics based on polymer—inorganic nanoparticle composite materials” 56 627–632 (2013)
72.80.Le, 72.80.Tm, 73.40.Lq, 73.61.Le, 73.61.Ph (all)
“Celebrating 50 years of the laser (Scientific session of the General Meeting of the Physical Sciences Division of the Russian Academy of Sciences, 13 December 2010)” 54 837–870 (2011)
01.10.Fv, 03.75.−b, 07.57.−c, 32.30.Jc, 37.10.−x, 37.10.De, 37.10.Gh, 42.62.−b, 42.65.−k, 42.70.−a, 42.82.−m, 67.85.−d, 78.67.−n, 85.40.−e, 84.40.Ik (all)
N.N. Ledentsov, J.A. Lott “New-generation vertically emitting lasers as a key factor in the computer communication era” 54 853–858 (2011)
42.62.−b, 42.82.−m, 85.40.−e (all)
W.S. Boyle “CCD — An extension of man’s view” 53 (12) (2010)
01.30.Bb, 85.30.−z, 85.60.Gz (all)
G.E. Smith “The invention and early history of the CCD” 53 (12) (2010)
01.30.Bb, 85.30.−z, 85.60.Gz (all)
T.V. Perevalov, V.A. Gritsenko “Application and electronic structure of high-permittivity dielectrics” 53 561–575 (2010)
71.15.Mb, 77.55.D−, 85.30.−z (all)
A.I. Vorob’eva “Fabrication techniques of electrode arrays for carbon nanotubes” 52 225–234 (2009)
73.63.Fg, 85.35.Kt, 85.40.−e (all)
I.I. Taubkin “Photoinduced and thermal noise in semiconductor p-n junctions” 49 1289–1306 (2006)
72.70.+m, 85.30.−z, 85.60.Dw (all)
D.R. Khokhlov, A.V. Mitin et al “Scientific session of the Physical Sciences Division of the Russian Academy of Sciences (12 April 2006)” 49 955–959 (2006)
01.10.Fv, 07.57.−c, 78.20.−e, 85.30.−z (all)
I.V. Grekhov, G.A. Mesyats “Nanosecond semiconductor diodes for pulsed power switching” 48 703–712 (2005)
84.70.+p, 85.30.−z, 85.30.Kk (all)
Yu.B. Bolkhovityanov, O.P. Pchelyakov, S.I. Chikichev “Silicon-germanium epilayers: physical fundamentals of growing strained and fully relaxed heterostructures” 44 655–680 (2001)
61.72.Lk, 62.25.+g, 73.40.Kp, 81.15.−z (all)
O.P. Pchelyakov “Molecular beam epitaxy: equipment, devices, technology” 43 923–925 (2000)
07.07.−a, 81.15.Hi, 85.30.−z (all)
E.V. Devyatov, A.A. Shashkin et al “Tunneling measurements of the Coulomb pseudogap in a two-dimensional electron system in a quantizing magnetic field” 43 285–288 (2000)
72.20.My, 73.40.Kp (all)
V.A. Volkov, E.E. Takhtamirov “Dynamics of an electron with space-dependent mass and the effective-mass method for semiconductor heterostructures” 40 1071–1075 (1997)
71.25.Cx, 73.20.Dx, 73.40.Kp
B.A. Volkov, B.G. Idlis, M.Sh. Usmanov “Interface states in inhomogeneous semiconductor structures” 38 761–771 (1995)
73.20.Dx, 73.40.Lq, 71.28.+d (all)
V.S. Vavilov “Semiconductors in the modern world” 38 555–558 (1995)
85.30.−z, 72.80.−r, 01.10.Fv (all)
L.N. Kryzhanovskii “A history of the invention of and research on the coherer” 35 (4) 334–338 (1992)
85.30.−z, 84.32.Ff (all)
V.B. Timofeev “Current state of semiconductor silicon technology and material science” 33 (6) 492–493 (1990)
01.30.Vv, 85.40.−e, 81.10.−h, 81.15.−z (all)
V.E. Golant, Yu.V. Gulyaev et al “Zhores Ivanovich Alferov (on his sixtieth birthday)” 33 (3) 257–258 (1990)
01.60.+q, 85.30.−z (all)
B.G. Idlis “Physics and technology of submicron structures” 32 834–834 (1989)
01.30.Vv, 85.30.−z (all)
A.P. Silin “High magnetic fields in semiconductor physics” 31 784–784 (1988)
01.30.Vv, 72.20.Ht, 73.43.−f, 73.40.Kp, 73.63.Hs, 72.20.My (all)
I.V. Kukushkin, S.V. Meshkov, V.B. Timofeev “Two-dimensional electron density of states in a transverse magnetic field” 31 511–534 (1988)
73.20.At, 73.40.Qv, 73.40.Kp, 71.70.Di, 73.40.Cg, 72.20.Jv (all)
Zh.I. Alferov, V.S. Vavilov et al “Viktor Leopol’dovich Bonch-Bruevich (Obituary)” 31 171–172 (1988)
01.60.+q, 01.10.Cr, 01.10.Fv, 85.30.−z, 68.43.Mn, 82.65.+r (all)
O.P. Zaskal’ko “Picosecond electronics and optoelectronics” 30 350–350 (1987)
01.30.Vv, 01.30.Ee, 85.60.−q, 85.30.−z, 81.15.Gh, 81.15.Hi (all)
A.P. Aleksandrov, Zh.I. Alferov et al “Vladimir Maksimovich Tuchkevich (on his eightieth birthday)” 27 980–982 (1984)
01.60.+q, 85.30.−z (all)
A.N. Georgobiani “Wide-band II-VI semiconductors and the prospects of their application” 17 424–437 (1974)
73.40.Lq, 78.60.Fi, 85.30.−z, 61.72.Ji (all)
Zh.I. Alferov “Semiconductor Devices with Heterojunctions” 15 834–835 (1973)
73.40.Kp, 85.30.−z, 85.60.Dw (all)
M.I. Elinson “Problems of Functional Microelectronics” 16 281–281 (1973)
85.40.−e, 85.30.−z (all)
K.A. Valiev “Present-day Semiconductor Microelectronics and the Prospects of its Development” 16 281–283 (1973)
85.40.−e, 85.30.−z, 73.40.Kp, 73.40.Lq (all)
V.I. Fistul’, N.Z. Shvarts “TUNNEL DIODES” 5 430–459 (1962)
85.30.Mn, 73.40.Gk, 73.40.Kp, 85.30.De (all)
A.M. Kugushev “RADIO ELECTRONICS (On the 100th Birthday of A. S. Popov)” 2 305–328 (1959)
84.40.Ua, 41.20.Jb, 85.40.−e, 84.40.Xb (all)

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