PACS numbers

73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions 73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions 85.30.−z Semiconductor devices 85.40.−e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
  1. O.A. Pankratov “Understanding surface states of topological insulators61 (11) (2018)
    73.20.−r, 73.40.Lq, 73.43.Cd (all)
  2. A.N. Aleshin “Organic optoelectronics based on polymer—inorganic nanoparticle composite materials56 627–632 (2013)
    72.80.Le, 72.80.Tm, 73.40.Lq, 73.61.Le, 73.61.Ph (all)
  3. Celebrating 50 years of the laser (Scientific session of the General Meeting of the Physical Sciences Division of the Russian Academy of Sciences, 13 December 2010)54 837–870 (2011)
    01.10.Fv, 03.75.−b, 07.57.−c, 32.30.Jc, 37.10.−x, 37.10.De, 37.10.Gh, 42.62.−b, 42.65.−k, 42.70.−a, 42.82.−m, 67.85.−d, 78.67.−n, 85.40.−e, 84.40.Ik (all)
  4. N.N. Ledentsov, J.A. Lott “New-generation vertically emitting lasers as a key factor in the computer communication era54 853–858 (2011)
    42.62.−b, 42.82.−m, 85.40.−e (all)
  5. W.S. Boyle “CCD — An extension of man’s view53 (12) (2010)
    01.30.Bb, 85.30.−z, 85.60.Gz (all)
  6. G.E. Smith “The invention and early history of the CCD53 (12) (2010)
    01.30.Bb, 85.30.−z, 85.60.Gz (all)
  7. T.V. Perevalov, V.A. Gritsenko “Application and electronic structure of high-permittivity dielectrics53 561–575 (2010)
    71.15.Mb, 77.55.D−, 85.30.−z (all)
  8. A.I. Vorob’eva “Fabrication techniques of electrode arrays for carbon nanotubes52 225–234 (2009)
    73.63.Fg, 85.35.Kt, 85.40.−e (all)
  9. I.I. Taubkin “Photoinduced and thermal noise in semiconductor p-n junctions49 1289–1306 (2006)
    72.70.+m, 85.30.−z, 85.60.Dw (all)
  10. D.R. Khokhlov, A.V. Mitin et alScientific session of the Physical Sciences Division of the Russian Academy of Sciences (12 April 2006)49 955–959 (2006)
    01.10.Fv, 07.57.−c, 78.20.−e, 85.30.−z (all)
  11. I.V. Grekhov, G.A. Mesyats “Nanosecond semiconductor diodes for pulsed power switching48 703–712 (2005)
    84.70.+p, 85.30.−z, 85.30.Kk (all)
  12. Yu.B. Bolkhovityanov, O.P. Pchelyakov, S.I. Chikichev “Silicon-germanium epilayers: physical fundamentals of growing strained and fully relaxed heterostructures44 655–680 (2001)
    61.72.Lk, 62.25.+g, 73.40.Kp, 81.15.−z (all)
  13. O.P. Pchelyakov “Molecular beam epitaxy: equipment, devices, technology43 923–925 (2000)
    07.07.−a, 81.15.Hi, 85.30.−z (all)
  14. E.V. Devyatov, A.A. Shashkin et alTunneling measurements of the Coulomb pseudogap in a two-dimensional electron system in a quantizing magnetic field43 285–288 (2000)
    72.20.My, 73.40.Kp (all)
  15. V.A. Volkov, E.E. Takhtamirov “Dynamics of an electron with space-dependent mass and the effective-mass method for semiconductor heterostructures40 1071–1075 (1997)
    71.25.Cx, 73.20.Dx, 73.40.Kp
  16. B.A. Volkov, B.G. Idlis, M.Sh. Usmanov “Interface states in inhomogeneous semiconductor structures38 761–771 (1995)
    73.20.Dx, 73.40.Lq, 71.28.+d (all)
  17. V.S. Vavilov “Semiconductors in the modern world38 555–558 (1995)
    85.30.−z, 72.80.−r, 01.10.Fv (all)
  18. L.N. Kryzhanovskii “A history of the invention of and research on the coherer35 (4) 334–338 (1992)
    85.30.−z, 84.32.Ff (all)
  19. V.B. Timofeev “Current state of semiconductor silicon technology and material science33 (6) 492–493 (1990)
    01.30.Vv, 85.40.−e, 81.10.−h, 81.15.−z (all)
  20. V.E. Golant, Yu.V. Gulyaev et alZhores Ivanovich Alferov (on his sixtieth birthday)33 (3) 257–258 (1990)
    01.60.+q, 85.30.−z (all)
  21. B.G. Idlis “Physics and technology of submicron structures32 834–834 (1989)
    01.30.Vv, 85.30.−z (all)
  22. A.P. Silin “High magnetic fields in semiconductor physics31 784–784 (1988)
    01.30.Vv, 72.20.Ht, 73.43.−f, 73.40.Kp, 73.63.Hs, 72.20.My (all)
  23. I.V. Kukushkin, S.V. Meshkov, V.B. Timofeev “Two-dimensional electron density of states in a transverse magnetic field31 511–534 (1988)
    73.20.At, 73.40.Qv, 73.40.Kp, 71.70.Di, 73.40.Cg, 72.20.Jv (all)
  24. Zh.I. Alferov, V.S. Vavilov et alViktor Leopol’dovich Bonch-Bruevich (Obituary)31 171–172 (1988)
    01.60.+q, 01.10.Cr, 01.10.Fv, 85.30.−z, 68.43.Mn, 82.65.+r (all)
  25. O.P. Zaskal’ko “Picosecond electronics and optoelectronics30 350–350 (1987)
    01.30.Vv, 01.30.Ee, 85.60.−q, 85.30.−z, 81.15.Gh, 81.15.Hi (all)
  26. A.P. Aleksandrov, Zh.I. Alferov et alVladimir Maksimovich Tuchkevich (on his eightieth birthday)27 980–982 (1984)
    01.60.+q, 85.30.−z (all)
  27. A.N. Georgobiani “Wide-band II-VI semiconductors and the prospects of their application17 424–437 (1974)
    73.40.Lq, 78.60.Fi, 85.30.−z, 61.72.Ji (all)
  28. Zh.I. Alferov “Semiconductor Devices with Heterojunctions15 834–835 (1973)
    73.40.Kp, 85.30.−z, 85.60.Dw (all)
  29. M.I. Elinson “Problems of Functional Microelectronics16 281–281 (1973)
    85.40.−e, 85.30.−z (all)
  30. K.A. Valiev “Present-day Semiconductor Microelectronics and the Prospects of its Development16 281–283 (1973)
    85.40.−e, 85.30.−z, 73.40.Kp, 73.40.Lq (all)
  31. V.I. Fistul’, N.Z. Shvarts “TUNNEL DIODES5 430–459 (1962)
    85.30.Mn, 73.40.Gk, 73.40.Kp, 85.30.De (all)
  32. A.M. Kugushev “RADIO ELECTRONICS (On the 100th Birthday of A. S. Popov)2 305–328 (1959)
    84.40.Ua, 41.20.Jb, 85.40.−e, 84.40.Xb (all)
  33. P.V. Ratnikov, A.P. Silin “Two-dimensional graphene electronics: current state and prospects”, accepted
    68.65.Pq, 68.65.Cd, 73.21.Fg, 73.40.Gk, 73.50.−h, 85.30.Tv, 85.40.−e, 85.60.−q, 85.65.+h (all)
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