PACS numbers

84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables 85.30.−z Semiconductor devices 85.30.Kk Junction diodes
  1. A.A. Lebedev, P.A. Ivanov et alSiC-based electronics (100th anniversary of the Ioffe Institute)62 (8) (2019)
    81.05.ue, 81.10.−h, 85.30.−z (all)
  2. Celebrating the 65th anniversary of the Russian Federal Nuclear Center — All-Russian Research Institute of Experimental Physics (Scientific session of the Physical Sciences Division of the Russian Academy of Sciences, 6 October 2010)54 387–427 (2011)
    01.10.Fv, 01.65.+g, 05.70.Ce, 07.35.+k, 07.55.Db, 28.52.−s, 28.70.+y, 42.55.−f, 42.62.−b, 47.20.−k, 47.27.wj, 47.40.−x, 52.57.−z, 61.05.C−, 64.30.−t, 74.25.−q, 84.30.Ng, 84.70.+p, 85.70.−w (all)
  3. B.E. Grinevich, V.A. Demidov et alExplosive magnetic generators and their application in scientific experiments54 403–408 (2011)
    84.30.Ng, 84.70.+p, 85.70.−w (all)
  4. W.S. Boyle “CCD — An extension of man’s view53 (12) (2010)
    01.30.Bb, 85.30.−z, 85.60.Gz (all)
  5. G.E. Smith “The invention and early history of the CCD53 (12) (2010)
    01.30.Bb, 85.30.−z, 85.60.Gz (all)
  6. T.V. Perevalov, V.A. Gritsenko “Application and electronic structure of high-permittivity dielectrics53 561–575 (2010)
    71.15.Mb, 77.55.D−, 85.30.−z (all)
  7. G.A. Mesyats “Electron emission from ferroelectric plasma cathodes51 79–100 (2008)
    52.80.−s, 84.70.+p, 85.45.−w (all)
  8. I.I. Taubkin “Photoinduced and thermal noise in semiconductor p-n junctions49 1289–1306 (2006)
    72.70.+m, 85.30.−z, 85.60.Dw (all)
  9. D.R. Khokhlov, A.V. Mitin et alScientific session of the Physical Sciences Division of the Russian Academy of Sciences (12 April 2006)49 955–959 (2006)
    01.10.Fv, 07.57.−c, 78.20.−e, 85.30.−z (all)
  10. I.V. Grekhov, G.A. Mesyats “Nanosecond semiconductor diodes for pulsed power switching48 703–712 (2005)
    84.70.+p, 85.30.−z, 85.30.Kk (all)
  11. G.A. Mesyats, M.I. Yalandin “High-power picosecond electronics48 211–229 (2005)
    52.59.−f, 52.80.−s, 84.30.Jc, 84.40.−x, 84.70.+p (all)
  12. N.A. Chernoplekov “State of the art in applied high-current superconductivity45 659–665 (2002)
    74.72.−h, 84.70.+p, 85.25.Kx (all)
  13. O.P. Pchelyakov “Molecular beam epitaxy: equipment, devices, technology43 923–925 (2000)
    07.07.−a, 81.15.Hi, 85.30.−z (all)
  14. V.S. Vavilov “Semiconductors in the modern world38 555–558 (1995)
    85.30.−z, 72.80.−r, 01.10.Fv (all)
  15. L.N. Kryzhanovskii “A history of the invention of and research on the coherer35 (4) 334–338 (1992)
    85.30.−z, 84.32.Ff (all)
  16. A.D. Sakharov, R.Z. Lyudaev et alMagnetic cumulation34 (5) 385–386 (1991)
    84.32.Ff, 41.20.Gz, 84.70.+p (all)
  17. V.E. Golant, Yu.V. Gulyaev et alZhores Ivanovich Alferov (on his sixtieth birthday)33 (3) 257–258 (1990)
    01.60.+q, 85.30.−z (all)
  18. B.G. Idlis “Physics and technology of submicron structures32 834–834 (1989)
    01.30.Vv, 85.30.−z (all)
  19. Zh.I. Alferov, V.S. Vavilov et alViktor Leopol’dovich Bonch-Bruevich (Obituary)31 171–172 (1988)
    01.60.+q, 01.10.Cr, 01.10.Fv, 85.30.−z, 68.43.Mn, 82.65.+r (all)
  20. O.P. Zaskal’ko “Picosecond electronics and optoelectronics30 350–350 (1987)
    01.30.Vv, 01.30.Ee, 85.60.−q, 85.30.−z, 81.15.Gh, 81.15.Hi (all)
  21. A.P. Aleksandrov, Zh.I. Alferov et alVladimir Maksimovich Tuchkevich (on his eightieth birthday)27 980–982 (1984)
    01.60.+q, 85.30.−z (all)
  22. A.P. Aleksandrov, Zh.I. Alferov et alVladimir Maksimovich Tuchkevich (on his seventieth birthday)18 76–78 (1975)
    01.60.+q, 85.30.Kk (all)
  23. A.N. Georgobiani “Wide-band II-VI semiconductors and the prospects of their application17 424–437 (1974)
    73.40.Lq, 78.60.Fi, 85.30.−z, 61.72.Ji (all)
  24. S.I. Radautsan “Investigation of Compound Semiconductive Materials in the Moldavian SSR17 448–450 (1974)
    71.20.Nr, 78.55.Hx, 85.30.Kk (all)
  25. Zh.I. Alferov “Semiconductor Devices with Heterojunctions15 834–835 (1973)
    73.40.Kp, 85.30.−z, 85.60.Dw (all)
  26. M.I. Elinson “Problems of Functional Microelectronics16 281–281 (1973)
    85.40.−e, 85.30.−z (all)
  27. K.A. Valiev “Present-day Semiconductor Microelectronics and the Prospects of its Development16 281–283 (1973)
    85.40.−e, 85.30.−z, 73.40.Kp, 73.40.Lq (all)
  28. A.S. Tager “The avalanche-transit diode and its use in microwaves9 892–912 (1967)
    85.30.Kk, 72.20.Ht, 84.47.+w (all)
  29. N.N. Malov, A.N. Kozlova “New demonstrations in physics7 884–887 (1965)
    01.50.My, 84.40.Ua, 84.70.+p, 42.79.Ci (all)
  30. P.L. Kapitza “High power electronics5 777–826 (1963)
    84.40.Fe, 84.70.+p (all)
  31. L.A. Sliv, E.P. Mazets “LEV IL’ICH RUSINOV4 149–152 (1961)
    01.60.+q, 84.70.+p, 25.40.−h, 21.10.−k, 21.60.Cs (all)
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