PACS numbers

85.30.−z Semiconductor devices
  1. A.A. Lebedev, P.A. Ivanov et alSiC-based electronics (100th anniversary of the Ioffe Institute)Phys. Usp. 62 754–794 (2019)
    81.05.ue, 81.10.−h, 85.30.−z (all)
  2. W.S. Boyle “CCD — An extension of man’s viewPhys. Usp. 53 (12) (2010)
    01.30.Bb, 85.30.−z, 85.60.Gz (all)
  3. G.E. Smith “The invention and early history of the CCDPhys. Usp. 53 (12) (2010)
    01.30.Bb, 85.30.−z, 85.60.Gz (all)
  4. T.V. Perevalov, V.A. Gritsenko “Application and electronic structure of high-permittivity dielectricsPhys. Usp. 53 561–575 (2010)
    71.15.Mb, 77.55.D−, 85.30.−z (all)
  5. I.I. Taubkin “Photoinduced and thermal noise in semiconductor p-n junctionsPhys. Usp. 49 1289–1306 (2006)
    72.70.+m, 85.30.−z, 85.60.Dw (all)
  6. D.R. Khokhlov, A.V. Mitin et alScientific session of the Physical Sciences Division of the Russian Academy of Sciences (12 April 2006)Phys. Usp. 49 955–959 (2006)
    01.10.Fv, 07.57.−c, 78.20.−e, 85.30.−z (all)
  7. I.V. Grekhov, G.A. Mesyats “Nanosecond semiconductor diodes for pulsed power switchingPhys. Usp. 48 703–712 (2005)
    84.70.+p, 85.30.−z, 85.30.Kk (all)
  8. O.P. Pchelyakov “Molecular beam epitaxy: equipment, devices, technologyPhys. Usp. 43 923–925 (2000)
    07.07.−a, 81.15.Hi, 85.30.−z (all)
  9. V.S. Vavilov “Semiconductors in the modern worldPhys. Usp. 38 555–558 (1995)
    85.30.−z, 72.80.−r, 01.10.Fv (all)
  10. L.N. Kryzhanovskii “A history of the invention of and research on the cohererSov. Phys. Usp. 35 (4) 334–338 (1992)
    85.30.−z, 84.32.Ff (all)
  11. V.E. Golant, Yu.V. Gulyaev et alZhores Ivanovich Alferov (on his sixtieth birthday)Sov. Phys. Usp. 33 (3) 257–258 (1990)
    01.60.+q, 85.30.−z (all)
  12. B.G. Idlis “Physics and technology of submicron structuresSov. Phys. Usp. 32 834–834 (1989)
    01.30.Vv, 85.30.−z (all)
  13. Zh.I. Alferov, V.S. Vavilov et alViktor Leopol’dovich Bonch-Bruevich (Obituary)Sov. Phys. Usp. 31 171–172 (1988)
    01.60.+q, 01.10.Cr, 01.10.Fv, 85.30.−z, 68.43.Mn, 82.65.+r (all)
  14. O.P. Zaskal’ko “Picosecond electronics and optoelectronicsSov. Phys. Usp. 30 350–350 (1987)
    01.30.Vv, 01.30.Ee, 85.60.−q, 85.30.−z, 81.15.Gh, 81.15.Hi (all)
  15. A.P. Aleksandrov, Zh.I. Alferov et alVladimir Maksimovich Tuchkevich (on his eightieth birthday)Sov. Phys. Usp. 27 980–982 (1984)
    01.60.+q, 85.30.−z (all)
  16. A.N. Georgobiani “Wide-band II-VI semiconductors and the prospects of their applicationSov. Phys. Usp. 17 424–437 (1974)
    73.40.Lq, 78.60.Fi, 85.30.−z, 61.72.Ji (all)
  17. Zh.I. Alferov “Semiconductor Devices with HeterojunctionsSov. Phys. Usp. 15 834–835 (1973)
    73.40.Kp, 85.30.−z, 85.60.Dw (all)
  18. M.I. Elinson “Problems of Functional MicroelectronicsSov. Phys. Usp. 16 281–281 (1973)
    85.40.−e, 85.30.−z (all)
  19. K.A. Valiev “Present-day Semiconductor Microelectronics and the Prospects of its DevelopmentSov. Phys. Usp. 16 281–283 (1973)
    85.40.−e, 85.30.−z, 73.40.Kp, 73.40.Lq (all)
© 1918–2024 Uspekhi Fizicheskikh Nauk
Email: ufn@ufn.ru Editorial office contacts About the journal Terms and conditions