61.72.Lk Linear defects: dislocations, disclinations 62.25.+g Mechanical properties of nanoscale materials 73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions 81.15.−z Methods of deposition of films and coatings; film growth and epitaxy

V.N. Polkovnikov, N.N. Salashchenko et al “Beryllium-based multilayer X-ray optics” Phys. Usp. 63 83–95 (2020)
07.60.−j, 07.85.Fv, 42.79.−e, 68.35.Ct, 68.35.Fx, 68.47.De, 68.55.A, 68.65.Ac, 81.15.−z (all)
T.S. Argunova, V.G. Kohn “Study of micropores in single crystals by in-line phase contrast imaging with synchrotron radiation” Phys. Usp. 62 602–616 (2019)
42.25.Fx, 42.25.Kb, 61.72.−y, 61.72.Ff, 61.72.Lk (all)
Yu.B. Bolkhovityanov, O.P. Pchelyakov “GaAs epitaxy on Si substrates: modern status of research and engineering” Phys. Usp. 51 437–456 (2008)
61.72.Lk, 62.25.−g, 81.05.Cy, 81.05.Ea, 81.15.−z, 85.40.Sz (all)
I. Božović “Experiments with atomically smooth thin films of cuprate superconductors: strong electron-phonon coupling and other surprises” Phys. Usp. 51 170–180 (2008)
74.45.+c, 74.78.−w, 81.15.−z (all)
A.V. Eletskii “Mechanical properties of carbon nanostructures and related materials” Phys. Usp. 50 225–261 (2007)
61.46.+w, 62.25.+g, 81.07.−b, 85.85.+j (all)
G.N. Makarov “Extreme processes in clusters impacting on a solid surface” Phys. Usp. 49 117–166 (2006)
34.50.−s, 36.40.−c, 43.25.Cb, 79.20.Rf, 81.15.−z (all)
M.O. Katanaev “Geometric theory of defects” Phys. Usp. 48 675–701 (2005)
02.40.−k, 46.05.+b, 61.72.Lk, 63.20.Mt (all)
A.D. Pogrebnyak, Yu.N. Tyurin “Modification of material properties and coating deposition using plasma jets” Phys. Usp. 48 487–514 (2005)
52.77.−j, 81.15.−z, 81.65.−b, 82.45.Bb (all)
A.I. Musienko, L.I. Manevich “Classical mechanical analogs of relativistic effects” Phys. Usp. 47 797–820 (2004)
03.30.+p, 05.45.Yv, 11.15.−q, 61.72.Lk (all)
Yu.S. Nechaev “Characteristics of hydride-like segregates of hydrogen at dislocations in palladium” Phys. Usp. 44 1189–1198 (2001)
61.72.Lk, 61.72.Ss, 64.75.+g, 66.30.Jt (all)
Yu.B. Bolkhovityanov, O.P. Pchelyakov, S.I. Chikichev “Silicon-germanium epilayers: physical fundamentals of growing strained and fully relaxed heterostructures” Phys. Usp. 44 655–680 (2001)
61.72.Lk, 62.25.+g, 73.40.Kp, 81.15.−z (all)
E.V. Devyatov, A.A. Shashkin et al “Tunneling measurements of the Coulomb pseudogap in a two-dimensional electron system in a quantizing magnetic field” Phys. Usp. 43 285–288 (2000)
72.20.My, 73.40.Kp (all)
V.I. Boiko, A.N. Valyaev, A.D. Pogrebnyak “Metal modification by high-power pulsed particle beams” Phys. Usp. 42 1139–1166 (1999)
41.75.−i, 61.80.−x, 81.15.−z, 81.40.−z (all)
S.A. Kukushkin, A.V. Osipov “Thin-film condensation processes” Phys. Usp. 41 983–1014 (1998)
68.35.−p, 68.18.+p, 68.15.+e, 81.15.−z (all)
V.A. Volkov, E.E. Takhtamirov “Dynamics of an electron with space-dependent mass and the effective-mass method for semiconductor heterostructures” Phys. Usp. 40 1071–1075 (1997)
71.25.Cx, 73.20.Dx, 73.40.Kp
V.B. Shikin, Yu.V. Shikina “Charged dislocations in semiconductor crystals” Phys. Usp. 38 845–875 (1995)
61.72.Lk, 71.55.Cn, 72.80.Cw (all)
A.I. Olemskoi, I.A. Sklyar “Evolution of the defect structure of a solid during plastic deformation” Sov. Phys. Usp. 35 (6) 455–480 (1992)
62.20.Fe, 61.72.Ji, 61.72.Lk, 61.72.Bb (all)
V.B. Timofeev “Current state of semiconductor silicon technology and material science” Sov. Phys. Usp. 33 (6) 492–493 (1990)
01.30.Vv, 85.40.−e, 81.10.−h, 81.15.−z (all)
A.P. Silin “High magnetic fields in semiconductor physics” Sov. Phys. Usp. 31 784–784 (1988)
01.30.Vv, 72.20.Ht, 73.43.−f, 73.40.Kp, 73.63.Hs, 72.20.My (all)
I.V. Kukushkin, S.V. Meshkov, V.B. Timofeev “Two-dimensional electron density of states in a transverse magnetic field” Sov. Phys. Usp. 31 511–534 (1988)
73.20.At, 73.40.Qv, 73.40.Kp, 71.70.Di, 73.40.Cg, 72.20.Jv (all)
O.A. Pankratov “Two-dimensional systems: physics and new devices” Sov. Phys. Usp. 30 754–755 (1987)
01.30.Vv, 81.15.−z, 71.55.−i, 73.43.−f (all)
L.N. Rashkovich, O.A. Shustin “New optical interference methods for studying the kinetics of crystallization in solution” Sov. Phys. Usp. 30 280–283 (1987)
81.10.Dn, 61.72.Lk (all)
S.S. Rozhkov “Topology, manifolds, and homotopy: Basic concepts and applications to n-field models” Sov. Phys. Usp. 29 530–538 (1986)
02.40.−k, 11.27.+d, 11.15.−q, 61.72.Lk, 61.30.−v, 75.50.−y (all)
V.G. Chudinov “Computer simulation of radiation processes” Sov. Phys. Usp. 28 277–278 (1985)
61.72.Bb, 61.72.Ji, 61.72.Lk, 61.80.Hg, 61.82.Bg (all)
V.R. Regel’ “Some problems of contemporary research on the mechanical properties of crystals” Sov. Phys. Usp. 27 547–548 (1984)
62.20.Fe, 81.40.Lm, 61.72.Lk (all)
V.V. Kirsanov, A.N. Orlov “Computer simulation of the atomic structure of defects in metals” Sov. Phys. Usp. 27 106–133 (1984)
61.72.Ji, 61.72.Bb, 61.72.Yx, 66.30.Lw, 61.72.Lk, 61.72.Mm (all)
Yu.A. Il’inskii, R.V. Khokhlov “The Possibility of Observing Stimulated γ Radiation” Sov. Phys. Usp. 16 565–567 (1974)
61.80.Ed, 61.72.Lk, 76.60.Cq, 71.70.Ej (all)
Zh.I. Alferov “Semiconductor Devices with Heterojunctions” Sov. Phys. Usp. 15 834–835 (1973)
73.40.Kp, 85.30.−z, 85.60.Dw (all)
K.A. Valiev “Present-day Semiconductor Microelectronics and the Prospects of its Development” Sov. Phys. Usp. 16 281–283 (1973)
85.40.−e, 85.30.−z, 73.40.Kp, 73.40.Lq (all)
Yu.A. Osip’yan “Interaction of Dislocations with Current Carriers in Crystals” Sov. Phys. Usp. 14 543–544 (1972)
61.72.Lk, 61.72.Hh, 62.20.Fe, 72.20.Jv, 61.72.Ji, 72.20.Fr (all)
A.L. Suvorov “Field-ion microscopy of radiation defects in single crystals” Sov. Phys. Usp. 13 317–334 (1970)
61.80.Hg, 61.80.Jh, 61.80.Fe, 61.72.Ji, 61.72.Lk (all)
A.M. Kosevich “Dynamical theory of dislocations” Sov. Phys. Usp. 7 837–854 (1965)
61.72.Lk, 61.72.Bb, 62.20.Dc (all)
V.I. Fistul’, N.Z. Shvarts “TUNNEL DIODES” Sov. Phys. Usp. 5 430–459 (1962)
85.30.Mn, 73.40.Gk, 73.40.Kp, 85.30.De (all)
R.I. Garber, I.A. Gindin “Physics of the strength of crystalline materials” Sov. Phys. Usp. 3 41–77 (1960)
62.20.Fe, 62.20.Mk, 81.40.Lm, 81.40.Np, 61.72.Lk, 61.72.Mm (all)

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