61.72.Lk Linear defects: dislocations, disclinations 71.55.Cn Elemental semiconductors 72.80.Cw Elemental semiconductors

T.S. Argunova, V.G. Kohn “Study of micropores in single crystals by in-line phase contrast imaging with synchrotron radiation” 62 602–616 (2019)
42.25.Fx, 42.25.Kb, 61.72.−y, 61.72.Ff, 61.72.Lk (all)
V.A. Milichko, A.S. Shalin et al “Solar photovoltaics: current state and trends” 59 727–772 (2016)
42.25.Bs, 42.79.Wc, 61.46.−w, 71.20.Nr, 71.20.Rv, 72.40.+w, 72.80.Cw, 84.60.Jt (all)
Yu.B. Bolkhovityanov, O.P. Pchelyakov “GaAs epitaxy on Si substrates: modern status of research and engineering” 51 437–456 (2008)
61.72.Lk, 62.25.−g, 81.05.Cy, 81.05.Ea, 81.15.−z, 85.40.Sz (all)
M.O. Katanaev “Geometric theory of defects” 48 675–701 (2005)
02.40.−k, 46.05.+b, 61.72.Lk, 63.20.Mt (all)
A.I. Musienko, L.I. Manevich “Classical mechanical analogs of relativistic effects” 47 797–820 (2004)
03.30.+p, 05.45.Yv, 11.15.−q, 61.72.Lk (all)
Yu.S. Nechaev “Characteristics of hydride-like segregates of hydrogen at dislocations in palladium” 44 1189–1198 (2001)
61.72.Lk, 61.72.Ss, 64.75.+g, 66.30.Jt (all)
Yu.B. Bolkhovityanov, O.P. Pchelyakov, S.I. Chikichev “Silicon-germanium epilayers: physical fundamentals of growing strained and fully relaxed heterostructures” 44 655–680 (2001)
61.72.Lk, 62.25.+g, 73.40.Kp, 81.15.−z (all)
V.B. Shikin, Yu.V. Shikina “Charged dislocations in semiconductor crystals” 38 845–875 (1995)
61.72.Lk, 71.55.Cn, 72.80.Cw (all)
A.I. Olemskoi, I.A. Sklyar “Evolution of the defect structure of a solid during plastic deformation” 35 (6) 455–480 (1992)
62.20.Fe, 61.72.Ji, 61.72.Lk, 61.72.Bb (all)
L.N. Rashkovich, O.A. Shustin “New optical interference methods for studying the kinetics of crystallization in solution” 30 280–283 (1987)
81.10.Dn, 61.72.Lk (all)
S.S. Rozhkov “Topology, manifolds, and homotopy: Basic concepts and applications to n-field models” 29 530–538 (1986)
02.40.−k, 11.27.+d, 11.15.−q, 61.72.Lk, 61.30.−v, 75.50.−y (all)
V.G. Chudinov “Computer simulation of radiation processes” 28 277–278 (1985)
61.72.Bb, 61.72.Ji, 61.72.Lk, 61.80.Hg, 61.82.Bg (all)
S.G. Tikhodeev “The electron-hole liquid in a semiconductor” 28 1–30 (1985)
71.35.Ee, 63.20.Kr, 72.40.+w, 72.30.+q, 72.80.Cw (all)
V.R. Regel’ “Some problems of contemporary research on the mechanical properties of crystals” 27 547–548 (1984)
62.20.Fe, 81.40.Lm, 61.72.Lk (all)
V.V. Kirsanov, A.N. Orlov “Computer simulation of the atomic structure of defects in metals” 27 106–133 (1984)
61.72.Ji, 61.72.Bb, 61.72.Yx, 66.30.Lw, 61.72.Lk, 61.72.Mm (all)
Yu.A. Il’inskii, R.V. Khokhlov “The Possibility of Observing Stimulated γ Radiation” 16 565–567 (1974)
61.80.Ed, 61.72.Lk, 76.60.Cq, 71.70.Ej (all)
V.S. Vavilov, E.A. Konorova “Semiconductor Diamonds” 15 835–835 (1973)
66.70.+f, 71.55.Cn, 72.20.Jv, 61.72.Ww (all)
Yu.A. Osip’yan “Interaction of Dislocations with Current Carriers in Crystals” 14 543–544 (1972)
61.72.Lk, 61.72.Hh, 62.20.Fe, 72.20.Jv, 61.72.Ji, 72.20.Fr (all)
G.S. Buberman “The band structure of diamond” 14 180–196 (1971)
71.20.Mq, 71.15.Ap, 71.55.Cn (all)
I.V. Karpova, S.G. Kalashnikov et al “Recombination Waves in Compensated Germanium” 12 583–585 (1970)
72.20.Jv, 72.80.Cw (all)
A.L. Suvorov “Field-ion microscopy of radiation defects in single crystals” 13 317–334 (1970)
61.80.Hg, 61.80.Jh, 61.80.Fe, 61.72.Ji, 61.72.Lk (all)
V.S. Vavilov “The nature and energy spectrum of radiation defects in semiconductors” 7 797–808 (1965)
71.55.Cn, 61.82.Fk, 72.40.+w, 72.80.Cw (all)
A.M. Kosevich “Dynamical theory of dislocations” 7 837–854 (1965)
61.72.Lk, 61.72.Bb, 62.20.Dc (all)
V.S. Vavilov “Radiation ionization processes in germanium and silicon crystals” 4 761–769 (1962)
72.40.+w, 72.80.Cw, 72.20.Jv (all)
R.I. Garber, I.A. Gindin “Physics of the strength of crystalline materials” 3 41–77 (1960)
62.20.Fe, 62.20.Mk, 81.40.Lm, 81.40.Np, 61.72.Lk, 61.72.Mm (all)
V.S. Vavilov “Radiative recombination in semiconductors” 2 455–464 (1959)
72.20.Jv, 72.80.Cw (all)

PACS numbers