Terahertz photoconductivity and nontrivial local electronic states in doped lead telluride-based semiconductors

L.I. Ryabova^a, D.R. Khokhlov^b, c
^aDepartment of Chemistry, M.V. Lomonosov Moscow State University, Leninskie Gory, Moscow, 119992, Russian Federation
^bLomonosov Moscow State University, Faculty of Physics, Leninskie Gory 1 build. 2, Moscow, 119991, Russian Federation
^cLebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation

This paper reviews unusual photoelectric effects observed in doped narrow-gap PbTe-based semiconductors exposed to intense terahertz laser pulses. It is shown that in some cases these effects are due to those (nontrivial) local electronic states that, unlike ordinary, spectrally defined impurity states, are tied to the quasi-Fermi level, whose position can be varied by changing the degree of photoexcitation.

PACS: 72.40.+w, 73.20.Hb (all)
DOI: 10.3367/UFNe.0184.201410b.1033
URL: https://ufn.ru/en/articles/2014/10/b/
Web of Science

000346960100004
Scopus

2-s2.0-84920033649
ADS NASA

2014PhyU...57..959R
Citation: Ryabova L I, Khokhlov D R "Terahertz photoconductivity and nontrivial local electronic states in doped lead telluride-based semiconductors" Phys. Usp. 57 959–969 (2014)

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Received: 15th, January 2014, revised: 8th, February 2014, accepted: 11th, February 2014

Оригинал: Рябова Л И, Хохлов Д Р «Терагерцовая фотопроводимость и нетривиальные локальные электронные состояния в легированных полупроводниках на основе теллурида свинца» УФН 184 1033–1044 (2014); DOI: 10.3367/UFNr.0184.201410b.1033

References (64) Cited by (27) Similar articles (20) ↓

B.A. Volkov, L.I. Ryabova, D.R. Khokhlov “Mixed-valence impurities in lead telluride-based solid solutions” Phys. Usp. 45 819–846 (2002)
V.I. Kaidanov, Yu.I. Ravich “Deep and resonance states in A^IV B^VI semiconductors” Sov. Phys. Usp. 28 31–53 (1985)
A.V. Dmitriev, I.P. Zvyagin “Current trends in the physics of thermoelectric materials” Phys. Usp. 53 789–803 (2010)
I.K. Kikoin, S.D. Lazarev “Photoelectromagnetic effect” Sov. Phys. Usp. 21 297–308 (1978)
A.V. Galeeva, A.S. Kazakov, D.R. Khokhlov “Terahertz probing of topological insulators: photoelectric effects” Phys. Usp. 67 988–999 (2024)
M.V. Sadovskii “Pseudogap in high-temperature superconductors” Phys. Usp. 44 515–539 (2001)
I.G. Neizvestnyi, A.E. Klimov, V.N. Shumsky “Photon far-infrared and sub-millimeters array detectors” Phys. Usp. 58 952–962 (2015)
S.A. Nemov, Yu.I. Ravich “Thallium dopant in lead chalcogenides: investigation methods and peculiarities” Phys. Usp. 41 735–759 (1998)
N.N. Berchenko, M.V. Pashkovskii “Mercury telluride—a zero-gap semiconductor” Sov. Phys. Usp. 19 462–480 (1976)
V.S. Vavilov “The nature and energy spectrum of radiation defects in semiconductors” Sov. Phys. Usp. 7 797–808 (1965)
G.M. Guro “Characteristic times of electronic processes in seminconductors” Sov. Phys. Usp. 3 895–911 (1961)
V.M. Arutyunyan “Physical properties of the semiconductor-electrolyte interface” Sov. Phys. Usp. 32 521–542 (1989)
I.M. Tsidil’kovskii “Crystallization of a three-dimensional electron gas” Sov. Phys. Usp. 30 676–698 (1987)
S.G. Tikhodeev “The electron-hole liquid in a semiconductor” Sov. Phys. Usp. 28 1–30 (1985)
V.I. Belinicher, B.I. Sturman “The photogalvanic effect in media lacking a center of symmetry” Sov. Phys. Usp. 23 199–223 (1980)
I.A. Sokolik, E.L. Frankevich “The effect of magnetic fields on photoprocesses in organic solids” Sov. Phys. Usp. 16 687–701 (1974)
B.L. Gel’mont, V.I. Ivanov-Omskii, I.M. Tsidil’kovskii “The electronic energy spectrum of zero-gap semiconductors” Sov. Phys. Usp. 19 879–893 (1976)
V.A. Milichko, A.S. Shalin et al “Solar photovoltaics: current state and trends” Phys. Usp. 59 727–772 (2016)
A.L. Efros “Density of states and interband absorption of light in strongly doped semiconductors” Sov. Phys. Usp. 16 789–805 (1974)
Yu.S. Kalashnikova, A.V. Nefediev “X(3872) in the molecular model” Phys. Usp. 62 568–595 (2019)

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