Reviews of topical problems

Mixed-valence impurities in lead telluride-based solid solutions

 a,  b,  c
a Lebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation
b Department of Chemistry, M.V. Lomonosov Moscow State University, Leninskie Gory, Moscow, 119992, Russian Federation
c Lomonosov Moscow State University, Department of Physics, Leninskie Gory 1 build. 2, Moscow, 119991, Russian Federation

Experimental data on impurity states in narrow-gap lead telluride based semiconductors are summarized. Theoretical models describing the nontrivial properties of such states are presented. Applications to the design of highly sensitive far-infrared detectors are considered.

Fulltext pdf (612 KB)
Fulltext is also available at DOI: 10.1070/PU2002v045n08ABEH001146
PACS: 71.23.An, 71.55.−i, 85.60.Gz (all)
DOI: 10.1070/PU2002v045n08ABEH001146
Citation: Volkov B A, Ryabova L I, Khokhlov D R "Mixed-valence impurities in lead telluride-based solid solutions" Phys. Usp. 45 819–846 (2002)
BibTexBibNote ® (generic)BibNote ® (RIS)MedlineRefWorks

Оригинал: Волков Б А, Рябова Л И, Хохлов Д Р «Примеси с переменной валентностью в твердых растворах на основе теллурида свинца» УФН 172 875–906 (2002); DOI: 10.3367/UFNr.0172.200208b.0875

References (180) Cited by (205) Similar articles (20)

© 1918–2023 Uspekhi Fizicheskikh Nauk
Email: Editorial office contacts About the journal Terms and conditions