Mixed-valence impurities in lead telluride-based solid solutions
B.A. Volkov a
L.I. Ryabova b
D.R. Khokhlov c
a Lebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation
b Department of Chemistry, M.V. Lomonosov Moscow State University, Leninskie Gory, Moscow, 119992, Russian Federation
c Lomonosov Moscow State University, Department of Physics, Leninskie Gory 1 build. 2, Moscow, 119991, Russian Federation
Experimental data on impurity states in narrow-gap lead telluride based semiconductors are summarized. Theoretical models describing the nontrivial properties of such states are presented. Applications to the design of highly sensitive far-infrared detectors are considered.