Issues

 / 

2014

 / 

October

  

Reviews of topical problems


Terahertz photoconductivity and nontrivial local electronic states in doped lead telluride-based semiconductors

 a,  b, c
a Department of Chemistry, M.V. Lomonosov Moscow State University, Leninskie Gory, Moscow, 119992, Russian Federation
b Lomonosov Moscow State University, Department of Physics, Leninskie Gory 1 build. 2, Moscow, 119991, Russian Federation
c Lebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation

This paper reviews unusual photoelectric effects observed in doped narrow-gap PbTe-based semiconductors exposed to intense terahertz laser pulses. It is shown that in some cases these effects are due to those (nontrivial) local electronic states that, unlike ordinary, spectrally defined impurity states, are tied to the quasi-Fermi level, whose position can be varied by changing the degree of photoexcitation.

Fulltext is available at IOP
PACS: 72.40.+w, 73.20.Hb (all)
DOI: 10.3367/UFNe.0184.201410b.1033
URL: https://ufn.ru/en/articles/2014/10/b/
Citation: Ryabova L I, Khokhlov D R "Terahertz photoconductivity and nontrivial local electronic states in doped lead telluride-based semiconductors" Phys. Usp. 57 959–969 (2014)
BibTexBibNote ® (generic)BibNote ® (RIS)MedlineRefWorks

Received: 15th, January 2014, revised: 8th, February 2014, 11th, February 2014

Оригинал: Рябова Л И, Хохлов Д Р «Терагерцовая фотопроводимость и нетривиальные локальные электронные состояния в легированных полупроводниках на основе теллурида свинца» УФН 184 1033–1044 (2014); DOI: 10.3367/UFNr.0184.201410b.1033

References (64) ↓ Cited by (21) Similar articles (20)

  1. Fu L Phys. Rev. Lett. 106 106802 (2011)
  2. Dziawa P et al. Nature Mater. 11 1023 (2012)
  3. Tanaka Y et al. Phys. Rev. B 87 155105 (2013)
  4. Mahan G D, Sofo J O Proc. Natl. Acad. Sci. USA 93 7436 (1996)
  5. Heremans J P et al. Science 321 554 (2008)
  6. Heremans J P, Wiendlocha B, Chamoire A M Energy Environ. Sci. 5 5510 (2012)
  7. Jovovic V et al. J. Appl. Phys. 103 053710 (2008)
  8. Dmitriev A V, Zvyagin I P Usp. Fiz. Nauk 180 821 (2010); Dmitriev A V, Zvyagin I P Phys. Usp. 53 789 (2010)
  9. Fu H, Tsang S-W Nanoscale 4 2187 (2012)
  10. Khokhlov D (Ed.) Lead Chalcogenides: Physics & Applications (New York: Taylor & Francis, 2003)
  11. Rahim M et al. Opt. Lett. 33 3010 (2008)
  12. Kaidanov V I, Ravich Yu I Usp. Fiz. Nauk 145 51 (1985); Kaidanov V I, Ravich Yu I Sov. Phys. Usp. 28 31 (1985)
  13. Nimtz G, Schlicht B Narrow-Gap Semiconductors (Springer Tracts in Modern Physics) Vol. 98 (Ed. G Hohler) (Berlin: Springer-Verlag, 1983)
  14. Volkov B A, Ryabova L I, Khokhlov D R Usp. Fiz. Nauk 172 875 (2002); Volkov B A, Ryabova L I, Khokhlov D R Phys. Usp. 45 819 (2002)
  15. Volkov B A, Ruchaiskii O M Pis’ma ZhETF 62 205 (1995); Volkov B A, Ruchaiskii O M JETP Lett. 62 217 (1995)
  16. Akimov B A i dr. Fiz. Tekh. Poluprovodn. 13 752 (1979); Akimov B A et al. Sov. Phys. Semicond. 13 441 (1979)
  17. Khokhlov D R et al. Appl. Phys. Lett. 76 2835 (2000)
  18. Kazanskii A G, Richards P L, Haller E E Appl. Phys. Lett. 31 496 (1977)
  19. Ryabova L I, Khokhlov D R Pis’ma ZhETF 97 825 (2013); Ryabova L I, Khokhlov D R JETP Lett. 97 720 (2013)
  20. Schneider P et al. J. Appl. Phys. 96 420 (2004)
  21. Ganichev S D et al. Phys. Rev. Lett. 80 2409 (1998)
  22. Ganichev S D, Terent’ev Ya V, Yaroshetskii I D Pis’ma ZhTF 11 46 (1985); Ganichev S D, Terent’ev Ya V, Yaroshetskii I D Sov. Tech. Phys. Lett. 11 20 (1985)
  23. Ziemann E et al. J. Appl. Phys. 87 3843 (2000)
  24. Galeeva A V i dr. Pis’ma ZhETF 91 37 (2010); Galeeva A V et al. JETP Lett. 91 35 (2010)
  25. Khokhlov D et al. Appl. Phys. Lett. 93 264103 (2008)
  26. Ryabova L I Trudy XVII Mezhdunarodnogo simpoziuma "Nanofizika i nanoelektronika", Nizhnii Novgorod, 11 - 15 marta 2013 Vol. 2 (Nizhnii Novgorod: Institut fiziki mikrostruktur, 2013) p. 635
  27. Chernichkin V I et al. Europhys. Lett. 100 17008 (2012)
  28. Dashevsky Z, Kreizman R, Dariel M P J. Appl. Phys. 98 094309 (2005)
  29. Neustroev L N, Osipov V V Fiz. Tekh. Poluprovodn. 20 34 (1986)
  30. Dashevsky Z et al. J. Nanoelectron. Optoelectron. 4 296 (2009)
  31. Dashevsky Z Handbook Of Semiconductor Nanostructures And Nanodevices Vol. 4 (Ed. A A Balandin, K L Wang) (Stevenson Ranch, Calif.: American Scientific Publ., 2006), Ch. 11
  32. Komissarova T et al. Phys. Rev. B 75 195326 (2007)
  33. Dobrovol’skii A A i dr. Fiz. Tekh. Poluprovodn. 43 265 (2009); Dobrovolsky A A et al. Semiconductors 43 253 (2009)
  34. Dobrovolsky A A et al. Semicond. Sci. Technol. 24 075010 (2009)
  35. Chernichkin V I i dr. Fiz. Tekh. Poluprovodn. 45 1533 (2011); Chernichkin V I et al. Semiconductors 45 1474 (2011)
  36. Dobrovolsky A et al. Phys. Status Solidi C 7 869 (2010)
  37. Dobrovolsky A et al. J. Phys. Conf. Ser. 150 022009 (2009)
  38. Dobrovolsky A et al. Int. J. Mater. Res. 100 1252 (2009)
  39. Akimov B A i dr. Fiz. Tekh. Poluprovodn. 17 1604 (1983); Akimov B A et al. Sov. Phys. Semicond. 17 1021 (1983)
  40. Ryabova L et al. Proc. SPIE 8439 84391H-1 (2012)
  41. Sheinkman M K, Shik A Ya Fiz. Tekh. Poluprovodn. 10 209 (1976); Sheinkman M K, Shik A Ya Sov. Phys. Semicond. 10 128 (1976)
  42. Ryabova L I i dr. Pis’ma ZhETF 97 607 (2013); Ryabova L I et al. JETP Lett. 97 525 (2013)
  43. Kvon Z-D et al. Physica E 40 1885 (2008)
  44. Akimov B A et al. Phys. Lett. A 88 483 (1982)
  45. Ryabova L I, Khokhlov D R Pis’ma ZhETF 80 143 (2004); Ryabova L I, Khokhlov D R JETP Lett. 80 133 (2004)
  46. Skipetrov E P et al. J. Cryst. Growth 210 292 (2000)
  47. Skipetrov E P et al. Mold. J. Phys. Sci. (8) 63 (2009)
  48. Artamkin A I i dr. Fiz. Tekh. Poluprovodn. 44 1591 (2010); Artamkin A I et al. Semiconductors 44 1543 (2010)
  49. Skipetrov E P et al. Physica B 404 5262 (2009)
  50. Skipetrov E P i dr. FNT 39 98 (2013); Skipetrov E P et al. Low Temp. Phys. 39 76 (2013)
  51. Skipetrov E P et al. Semicond. Sci. Technol. 27 015019 (2012)
  52. Skipetrov E P i dr. Fiz. Tekh. Poluprovodn. 46 761 (2012); Skipetrov E P et al. Semiconductors 46 741 (2012)
  53. Mott N F, Davis E A Electronic Processes In Non-Crystalline Materials (Oxford: Clarendon Press, 1979); Mott N, Devis E Elektronnye Protsessy v Nekristallicheskikh Veshchestvakh Vol. 1 (M.: Mir, 1982)
  54. Artamkin A I i dr. Fiz. Tekh. Poluprovodn. 47 293 (2013); Artamkin A I et al. Semiconductors 47 319 (2013)
  55. Ganichev S D, Prettl W, Huggard P G Phys. Rev. Lett. 71 3882 (1993)
  56. Belogorokhov A I i dr. Pis’ma ZhETF 72 178 (2000); Belogorokhov A I et al. JETP Lett. 72 123 (2000)
  57. Romcevic N et al. Infrared Phys. Technol. 40 453 (1999)
  58. Romcevic M et al. J. Phys. Condens. Matter 12 8737 (2000)
  59. Egorova S G et al. J. Alloys Comp. 615 375 (2014)
  60. Chernichkin V I et al. Semicond. Sci. Technol. 27 035011 (2012)
  61. Akimov B A, Khokhlov D R Semicond. Sci. Technol. 8 S349 (1993)
  62. Chesnokov S N et al. Infrared Phys. 35 23 (1994)
  63. Dolzhenko D et al. Proc. SPIE 8452 84520W (2012)
  64. Khokhlov D R Abstracts of ICONO/LAT 2013, Moscow, 18 - 22 June 2013 (2013) p. 108

© 1918–2022 Uspekhi Fizicheskikh Nauk
Email: ufn@ufn.ru Editorial office contacts About the journal Terms and conditions