Terahertz photoconductivity and nontrivial local electronic states in doped lead telluride-based semiconductors

L.I. Ryabova^a, D.R. Khokhlov^b, c
^aDepartment of Chemistry, M.V. Lomonosov Moscow State University, Leninskie Gory, Moscow, 119992, Russian Federation
^bLomonosov Moscow State University, Faculty of Physics, Leninskie Gory 1 build. 2, Moscow, 119991, Russian Federation
^cLebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation

This paper reviews unusual photoelectric effects observed in doped narrow-gap PbTe-based semiconductors exposed to intense terahertz laser pulses. It is shown that in some cases these effects are due to those (nontrivial) local electronic states that, unlike ordinary, spectrally defined impurity states, are tied to the quasi-Fermi level, whose position can be varied by changing the degree of photoexcitation.

PACS: 72.40.+w, 73.20.Hb (all)
DOI: 10.3367/UFNe.0184.201410b.1033
URL: https://ufn.ru/en/articles/2014/10/b/
Web of Science

000346960100004
Scopus

2-s2.0-84920033649
ADS NASA

2014PhyU...57..959R
Citation: Ryabova L I, Khokhlov D R "Terahertz photoconductivity and nontrivial local electronic states in doped lead telluride-based semiconductors" Phys. Usp. 57 959–969 (2014)

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Received: 15th, January 2014, revised: 8th, February 2014, accepted: 11th, February 2014

Оригинал: Рябова Л И, Хохлов Д Р «Терагерцовая фотопроводимость и нетривиальные локальные электронные состояния в легированных полупроводниках на основе теллурида свинца» УФН 184 1033–1044 (2014); DOI: 10.3367/UFNr.0184.201410b.1033

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Hovsepyan R K, Aghamalyan N R et al J. Contemp. Phys. 53 358 (2018)
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Yasuda A, Takahashi Ya et al Journal Of Crystal Growth 470 37 (2017)
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Karmokov A M, Kalmykov R M, Shomakhov Z V J. Phys.: Conf. Ser. 816 012006 (2017)
Galeeva A V, Artamkin A I et al Jetp Lett. 106 162 (2017)
Akimov A N, Klimov A E et al Semiconductors 50 440 (2016)
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Galeeva A V, Egorova S G et al Jetp Lett. 104 68 (2016)
Samoilov A M, Belenko S V et al Russ J Gen Chem 85 2242 (2015)
Neizvestnyi I G, Klimov A E, Shumsky V N Uspekhi Fizicheskikh Nauk 185 1031 (2015) [Neizvestnyi I G, Klimov A E, Shumsky V N Phys.-Usp. 58 952 (2015)]
Akimov A N, Epov V S et al 2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, (2015) p. 49