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Terahertz photoconductivity and nontrivial local electronic states in doped lead telluride-based semiconductors

 a,  b, c
a Department of Chemistry, M.V. Lomonosov Moscow State University, Leninskie Gory, Moscow, 119992, Russian Federation
b Lomonosov Moscow State University, Department of Physics, Leninskie Gory 1 build. 2, Moscow, 119991, Russian Federation
c Lebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation

This paper reviews unusual photoelectric effects observed in doped narrow-gap PbTe-based semiconductors exposed to intense terahertz laser pulses. It is shown that in some cases these effects are due to those (nontrivial) local electronic states that, unlike ordinary, spectrally defined impurity states, are tied to the quasi-Fermi level, whose position can be varied by changing the degree of photoexcitation.

Fulltext is available at IOP
PACS: 72.40.+w, 73.20.Hb (all)
DOI: 10.3367/UFNe.0184.201410b.1033
URL: https://ufn.ru/en/articles/2014/10/b/
Citation: Ryabova L I, Khokhlov D R "Terahertz photoconductivity and nontrivial local electronic states in doped lead telluride-based semiconductors" Phys. Usp. 57 959–969 (2014)
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Received: 15th, January 2014, revised: 8th, February 2014, 11th, February 2014

Оригинал: Рябова Л И, Хохлов Д Р «Терагерцовая фотопроводимость и нетривиальные локальные электронные состояния в легированных полупроводниках на основе теллурида свинца» УФН 184 1033–1044 (2014); DOI: 10.3367/UFNr.0184.201410b.1033

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