Terahertz photoconductivity and nontrivial local electronic states in doped lead telluride-based semiconductors
D.R. Khokhlovb,c aDepartment of Chemistry, M.V. Lomonosov Moscow State University, Leninskie Gory, Moscow, 119992, Russian Federation bLomonosov Moscow State University, Department of Physics, Leninskie Gory 1 build. 2, Moscow, 119991, Russian Federation cLebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation
This paper reviews unusual photoelectric effects observed in doped narrow-gap PbTe-based semiconductors exposed to intense terahertz laser pulses. It is shown that in some cases these effects are due to those (nontrivial) local electronic states that, unlike ordinary, spectrally defined impurity states, are tied to the quasi-Fermi level, whose position can be varied by changing the degree of photoexcitation.
PACS:72.40.+w, 73.20.Hb (all) DOI:10.3367/UFNe.0184.201410b.1033 URL: https://ufn.ru/en/articles/2014/10/b/ Citation: Ryabova L I, Khokhlov D R "Terahertz photoconductivity and nontrivial local electronic states in doped lead telluride-based semiconductors" Phys. Usp.57 959–969 (2014)
TI Terahertz photoconductivity and nontrivial local electronic states in doped lead telluride-based semiconductors
AU Ryabova, L. I.
AU Khokhlov, D. R.
JA Phys. Usp.
Received: 15th, January 2014, revised: 8th, February 2014, accepted: 11th, February 2014