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Application and electronic structure of high-permittivity dielectrics

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Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Lavrent'eva 13, Novosibirsk, 630090, Russian Federation

Major applications of high-permittivity dielectric materials in silicon devices are reviewed. The basics and software implementations of the electron density functional method are considered. Results of first-principle calculations of the electronic structure are analyzed for the three most important and promising high-permittivity dielectrics, Al2O3, HfO2 and TiO2.

Fulltext is available at IOP
PACS: 71.15.Mb, 77.55.D−, 85.30.−z (all)
DOI: 10.3367/UFNe.0180.201006b.0587
URL: https://ufn.ru/en/articles/2010/6/b/
Citation: Perevalov T V, Gritsenko V A "Application and electronic structure of high-permittivity dielectrics" Phys. Usp. 53 561–575 (2010)
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Оригинал: Перевалов Т В, Гриценко В А «Применение и электронная структура диэлектриков с высокой диэлектрической проницаемостью» УФН 180 587–603 (2010); DOI: 10.3367/UFNr.0180.201006b.0587

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