Reviews of topical problems

Structure of silicon/oxide and nitride/oxide interfaces

Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation

We systematize and generalize modern concepts on the atomic structure of silicon/insulator (Si/SiO2, Si=SiOxNy) and insulator/insulator (Si3N4/SiO2) interfaces in the structures underlying the operation of silicon devices.

Text can be downloaded in Russian. English translation is available on IOP Science.
PACS: 61.43.−j, 61.66.Fn, 68.35.Dv, 71.55.Jv (all)
DOI: 10.3367/UFNe.0179.200909a.0921
Citation: Gritsenko V A "Structure of silicon/oxide and nitride/oxide interfaces" Phys. Usp. 52 869–877 (2009)
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Оригинал: Гриценко В А «Структура границ раздела кремний/оксид и нитрид/оксид» УФН 179 921–930 (2009); DOI: 10.3367/UFNr.0179.200909a.0921

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