Application and electronic structure of high-permittivity dielectrics

T.V. Perevalov, V.A. Gritsenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Lavrent'eva 13, Novosibirsk, 630090, Russian Federation

Major applications of high-permittivity dielectric materials in silicon devices are reviewed. The basics and software implementations of the electron density functional method are considered. Results of first-principle calculations of the electronic structure are analyzed for the three most important and promising high-permittivity dielectrics, Al₂O₃, HfO₂ and TiO₂.

PACS: 71.15.Mb, 77.55.D−, 85.30.−z (all)
DOI: 10.3367/UFNe.0180.201006b.0587
URL: https://ufn.ru/en/articles/2010/6/b/
Web of Science

000281644500002
Scopus

2-s2.0-77958606853
ADS NASA

2010PhyU...53..561P
Citation: Perevalov T V, Gritsenko V A "Application and electronic structure of high-permittivity dielectrics" Phys. Usp. 53 561–575 (2010)

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@article{Perevalov:2010,
	author = {T. V. Perevalov and V. A. Gritsenko},
	title = {Application and electronic structure of high-permittivity dielectrics},
	publisher = {Physics-Uspekhi},
	year = {2010},
	journal = {Phys. Usp.},
	volume = {53},
	number = {6},
	pages = {561-575},
	url = {https://ufn.ru/en/articles/2010/6/b/},
	doi = {10.3367/UFNe.0180.201006b.0587}
}

Оригинал: Перевалов Т В, Гриценко В А «Применение и электронная структура диэлектриков с высокой диэлектрической проницаемостью» УФН 180 587–603 (2010); DOI: 10.3367/UFNr.0180.201006b.0587