RSS feeds
РусскийEnglish
Issue 11, 2024
Volume year page
Issues Authors PACS Subscription For authors

Issues

 / 

2010

 / 

June

←  →

Reviews of topical problems


Application and electronic structure of high-permittivity dielectrics

,
Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Lavrent'eva 13, Novosibirsk, 630090, Russian Federation

Major applications of high-permittivity dielectric materials in silicon devices are reviewed. The basics and software implementations of the electron density functional method are considered. Results of first-principle calculations of the electronic structure are analyzed for the three most important and promising high-permittivity dielectrics, Al2O3, HfO2 and TiO2.

Fulltext pdf (714 KB)
Fulltext is also available at DOI: 10.3367/UFNe.0180.201006b.0587
PACS: 71.15.Mb, 77.55.D−, 85.30.−z (all)
DOI: 10.3367/UFNe.0180.201006b.0587
URL: https://ufn.ru/en/articles/2010/6/b/
000281644500002
2-s2.0-77958606853
2010PhyU...53..561P
Citation: Perevalov T V, Gritsenko V A "Application and electronic structure of high-permittivity dielectrics" Phys. Usp. 53 561–575 (2010)
BibTexBibNote ® (generic)BibNote ® (RIS)MedlineRefWorks

Оригинал: Перевалов Т В, Гриценко В А «Применение и электронная структура диэлектриков с высокой диэлектрической проницаемостью» УФН 180 587–603 (2010); DOI: 10.3367/UFNr.0180.201006b.0587

References (100) ↓ Cited by (64) Similar articles (20)

  1. Hohenberg P, Kohn W Phys. Rev. 136 B864 (1964)
  2. Kohn W, Sham L J Phys. Rev. 140 A1133 (1965)
  3. Kohn W Rev. Mod. Phys. 71 1253 (1999); Kon V Usp. Fiz. Nauk 172 336 (2002)
  4. Yeo Y-C, King T-J, Hu C IEEE Trans. Electron Dev. 50 1027 (2003)
  5. Kingon A I, Maria J-P, Streiffer S K Nature 406 1032 (2000)
  6. Robertson J Eur. Phys. J. Appl. Phys. 28 265 (2004)
  7. Gritsenko V A et al. Solid-State Electron. 47 1651 (2003)
  8. Roizin Y, Gritsenko V Dielectric Films For Advanced Microelectronics (Eds M Baklanov, M Green, K Maex) (Chichester: John Wiley and Sons, 2007) p. 251
  9. Gritsenko B A i dr. Fiz. Tekh. Poluprovodn. 39 748 (2005); Gritsenko V A et al. Semicond. 39 716 (2005)
  10. Gritsenko V A et al. Microelectron. Eng. 81 530 (2005)
  11. Bu J, White M H Solid-State Electron. 45 47 (2001)
  12. Lee C-H, Park K-C, Kim K Appl. Phys. Lett. 87 073510 (2005)
  13. Lisiansky M et al. Appl. Phys. Lett. 89 153506 (2006)
  14. Chen S-C et al. Appl. Phys. Lett. 91 193103 (2007)
  15. Lai S-C et al. IEEE Electron Dev. Lett. 28 643 (2007)
  16. Cheng C H, Lee J Y-M Appl. Phys. Lett. 91 192903 (2007)
  17. Lee C-H et al. Appl. Phys. Lett. 86 152908 (2005)
  18. Specht M et al. Appl. Phys. Lett. 84 3076 (2004)
  19. Wang X, Kwong D-L IEEE Trans. Electron Dev. 53 78 (2006)
  20. Gritsan N P Kvantovaya Khimiya (Novosibirsk: Izd-vo NGU, 2001)
  21. Payne M C et al. Rev. Mod. Phys. 64 1045 (1992)
  22. Quantum ESPRESSO, http://www.quantum-espresso.org/
  23. Baroni S et al. "Plane-Wave Self-Consistent Field" http://www.pwscf.org
  24. BAND2004.01, SCM, Theoretical Chemistry, Vrije Universiteit, Amsterdam, The Netherlands, http://www.scm.com
  25. Levin I, Brandon D J. Am. Ceram. Soc. 81 1995 (1998)
  26. Ritala M et al. Science 288 319 (2000)
  27. Brytov I A, Romashchenko Yu N Fiz. Tverd. Tela 20 664 (1978); Brytov I A, Romashchenko Yu N Sov. Phys. Solid State 20 384 (1978)
  28. O’Brien W L et al. Phys. Rev. B 47 15482 (1993)
  29. Hoffman A, Paterson P J K Appl. Surf. Sci. 93 301 (1996)
  30. French R H, Mullejans H M, Jones D J J. Am. Ceram. Soc. 81 2549 (1998)
  31. Arakawa E T, Williams M W J. Phys. Chem. Solids 29 735 (1968)
  32. Balzarotti A, Bianconi A Phys. Status Solidi B 76 689 (1976)
  33. French R H J. Amer. Ceram. Soc. 73 477 (1990)
  34. Evarestov R A, Ermoshkin A N, Lovchikov V A Phys. Status Solidi B 99 387 (1980)
  35. Barta I P J. Phys. C 15 5399 (1982)
  36. Ciraci S, Batra I P Phys. Rev. B 28 982 (1983)
  37. Salasco L et al. Mol. Phys. 72 (2) 267 (1991)
  38. Ching W Y, Xu Y N J. Am. Ceram. Soc. 77 404 (1994)
  39. Guo J, Ellis D E, Lam D J Phys. Rev. B 45 3204 (1992)
  40. Xu Y-N, Ching W Y Phys. Rev. B 43 4461 (1991)
  41. Mo S-D, Ching W Y Phys. Rev. B 57 15219 (1998)
  42. Holm B et al. Phys. Rev. B 59 12777 (1999)
  43. Lee C-K et al. Phys. Rev. B 76 245110 (2007)
  44. Montanari B et al. Int. J. Quantum Chem. 106 1703 (2006)
  45. Perevalov T V i dr. Pis’ma ZhETF 85 197 (2007); Perevalov T V et al. JETP Lett. 85 165 (2007)
  46. Ealet B et al. Thin Solid Films 250 92 (1994)
  47. Mo S D, Xu Y N, Ching W Y J. Am. Ceram. Soc. 80 1193 (1997)
  48. Wolverton C, Hass K C Phys. Rev. B 63 024102 (2000)
  49. Gutiérrez G, Taga A, Johansson B Phys. Rev. B 65 012101 (2001)
  50. Cai S-H et al. Phys. Rev. B 67 224104 (2003)
  51. Paglia G et al. Phys. Rev. B 71 224115 (2005)
  52. Pinto H P, Nieminen R M, Elliott S D Phys. Rev. B 70 125402 (2004)
  53. Allan D C, Teter M P Phys. Rev. Lett. 59 1136 (1987)
  54. Chelikowsky J R, Schluter M Phys. Rev. B 15 4020 (1977)
  55. Kerber A et al. IEEE Trans. Electron Dev. 50 1261 (2003)
  56. Kim J et al. Appl. Phys. Lett. 80 2734 (2002)
  57. Shu Q Q, Ma W G Appl. Phys. Lett. 61 2542 (1992)
  58. Gritsenko V A Stroenie i Elektronnaya Struktura Amorfnykh Dielektrikov v Kremnievykh MDP Strukturakh (Novosibirsk: Nauka, 1993)
  59. Gritsenko V A i dr. Fiz. Tekh. Poluprovodn. 35 1041 (2001); Gritsenko V A et al. Semicond. 35 997 (2001)
  60. Gritsenko V A, Ivanov R M, Morokov Yu N Zh. Eksp. Teor. Fiz. 108 2216 (1995); Gritsenko V A, Ivanov R M, Morokov Yu N JETP 81 1208 (1995)
  61. Yeh J-J Atomic Calculation Of Photoionization Cross-Sections And Asymmetry Parameters (Amsterdam: Gordon and Breach Sci. Publ., 1993)
  62. Loong C K J. Eur. Cer. Soc. 19 2241 (1999)
  63. Griscom D L J. Non-Cryst. Solids 24 155 (1977)
  64. Afanas’ev V V et al. J. Appl. Phys. 91 3079 (2002)
  65. Gignac W J, Williams R S, Kowalczyk S P Phys. Rev. B 32 1237 (1985)
  66. Ruh R et al. J. Am. Ceram. Soc. 4 27 (1968)
  67. Zheng J X et al. Phys. Rev. B 75 104112 (2007)
  68. Foster A S et al. Phys. Rev. B 65 174117 (2002)
  69. Holgado J P et al. Thin Solid Films 389 34 (2001)
  70. Aarik J et al. Thin Solid Films 408 97 (2002)
  71. J. Vac. Sci. Technol. A 20 549 (2002)
  72. Schaefer J et al. J. Electrochem. Soc. 150 67 (2003)
  73. Wang J, Li H P, Stivens R J. Mater. Sci. 27 5397 (1992)
  74. Demkov A A Phys. Status Solidi B 226 57 (2001)
  75. Zafar S et al. Appl. Phys. Lett. 67 1031 (1995)
  76. Afanas’ev V V et al. Appl. Phys. Lett. 81 1053 (2002)
  77. Kato H et al. J. Appl. Phys. 92 1106 (2002)
  78. Perevalov T V et al. J. Appl. Phys. 101 053704 (2007)
  79. Zhu W J et al. IEEE Electron Dev. Lett. 23 97 (2002)
  80. Hinkle C L et al. Surf. Sci. 566-568 1185 (2004)
  81. Takeuchi H, King T-J Appl. Phys. Lett. 83 788 (2003)
  82. Perevalov T V et al. Defects In High-k Gate Dielectric Stacks (Ed. E Gusev) (Dordrecht: Springer, 2006)
  83. Lawler H M et al. Phys. Rev. B 78 205108 (2008)
  84. Schelling P K, Yu N, Halley J W Phys. Rev. B 58 1279 (1998)
  85. Fahmi A F et al. Phys. Rev. B 47 11717 (1993)
  86. Lin L B, Mo S D, Lin D L J. Phys. Chem. Solids 54 907 (1993)
  87. Mo S-D, Ching W Y Phys. Rev. B 51 13023 (1995)
  88. Reinhardt P, Hess B A Phys. Rev. B 50 12015 (1994)
  89. Glassford K M, Chelikowsky J R Phys. Rev. B 46 1284 (1992)
  90. Glassford K M, Chelikowsky J R Phys. Rev. B 45 3874 (1992)
  91. Poumellec B, Durham P J, Guo G Y J. Phys. Condens. Matter 3 8195 (1991)
  92. Amtout A, Leonelli R Phys. Rev. B 51 6842 (1995)
  93. Fischer D W Phys. Rev. B 5 4219 (1972)
  94. Pascual J, Camassel J, Mathieu H Phys. Rev. B 18 5606 (1978)
  95. Yamamoto S et al. Thin Solid Films 401 88 (2001)
  96. Pascual J, Camassel J, Mathieu H Phys. Rev. Lett. 39 1490 (1977)
  97. Mikhelashvili V, Eisenstein G J. Appl. Phys. 89 3256 (2001)
  98. Asahi R et al. Phys. Rev. B 61 7459 (2000)
  99. Philipp H R, Ehrenreich H Phys. Rev. 129 1550 (1963)
  100. Gritsenko V A Nitrid Kremniya v Elektronike (Novosibirsk: Nauka, 1982); Gritsenko V A Silicon Nitride In Electronics (Ed. A V Rzhanov) (New York: Elsevier, 1988)
© 1918–2024 Uspekhi Fizicheskikh Nauk
Email: ufn@ufn.ru Editorial office contacts About the journal Terms and conditions