Atomic structure of the amorphous nonstoichiometric silicon oxides and nitrides

V.A. Gritsenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation

In addition to amorphous SiO₂ and Si₃N₄, the two key dielectric film materials used in modern silicon devices, the fabrication technology of nonstoichiometric SiO_xN_y, SiN_x, and SiO_x compounds is currently under development. Varying the chemical composition of these compounds allows a wide range of control over their physical — specifically, optical and electrical — properties. The development of technology for synthesizing such films requires a detailed understanding of their atomic structure. Current views on the atomic structure of nonstoichiometric silicon nitrides and oxides are reviewed and summarized.

PACS: 33.60.Fy, 61.43.−j, 61.66.Fn, 68.35.Dv, 71.55.Jv (all)
DOI: 10.1070/PU2008v051n07ABEH006592
URL: https://ufn.ru/en/articles/2008/7/c/
Web of Science

000260580700003
Scopus

2-s2.0-55749101208
ADS NASA

2008PhyU...51..699G
Citation: Gritsenko V A "Atomic structure of the amorphous nonstoichiometric silicon oxides and nitrides" Phys. Usp. 51 699–708 (2008)

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Оригинал: Гриценко В А «Атомная структура аморфных нестехиометрических оксидов и нитридов кремния» УФН 178 727–737 (2008); DOI: 10.3367/UFNr.0178.200807c.0727

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