In addition to amorphous SiO₂ and Si₃N₄, the two key dielectric film materials used in modern silicon devices, the fabrication technology of nonstoichiometric SiO_xN_y, SiN_x, and SiO_x compounds is currently under development. Varying the chemical composition of these compounds allows a wide range of control over their physical — specifically, optical and electrical — properties. The development of technology for synthesizing such films requires a detailed understanding of their atomic structure. Current views on the atomic structure of nonstoichiometric silicon nitrides and oxides are reviewed and summarized.

PACS: 33.60.Fy, 61.43.−j, 61.66.Fn, 68.35.Dv, 71.55.Jv (all) DOI: 10.1070/PU2008v051n07ABEH006592 URL: https://ufn.ru/en/articles/2008/7/c/ 000260580700003 2-s2.0-55749101208 2008PhyU...51..699G Citation: Gritsenko V A "Atomic structure of the amorphous nonstoichiometric silicon oxides and nitrides" Phys. Usp. 51 699–708 (2008) BibTexBibNote ® (generic)BibNote ® (RIS) MedlineRefWorks PT Journal Article TI Atomic structure of the amorphous nonstoichiometric silicon oxides and nitrides AU Gritsenko V A FAU Gritsenko VA DP 10 Jul, 2008 TA Phys. Usp. VI 51 IP 7 PG 699-708 RX 10.1070/PU2008v051n07ABEH006592 URL https://ufn.ru/en/articles/2008/7/c/ SO Phys. Usp. 2008 Jul 10;51(7):699-708 Оригинал: Гриценко В А «Атомная структура аморфных нестехиометрических оксидов и нитридов кремния» УФН 178 727–737 (2008); DOI: 10.3367/UFNr.0178.200807c.0727