Defect-impurity engineering in implanted silicon
A.R. Chelyadinskii a
F.F. Komarov b
a Department of Physics, Belarussian State University, prosp. F. Skoriny 4, Minsk, 220050, Belarus
b A.N. Sevchenko Research Institute of Applied Physics Problems, Belarussian State University, pr. Kurchatova 7, Minsk, 220064, Belarus
The basic results of the studies of defect-impurity interaction in implanted silicon are presented. Factors affecting the way in which quasichemical reactions proceed — namely,
temperature, level of ionization, and internal electric and elastic-stress fields — are analyzed. Methods for suppressing residual damage effects (rodlike defects, dislocation loops), and schemes for reducing the impurity diffusivity and for gettering metallic impurities in implanted silicon are considered. Examples of the practical realization of defect-impurity engineering are presented and discussed.