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Reviews of topical problems


Atomic structure of the amorphous nonstoichiometric silicon oxides and nitrides


Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation

In addition to amorphous SiO2 and Si3N4, the two key dielectric film materials used in modern silicon devices, the fabrication technology of nonstoichiometric SiOxNy, SiNx, and SiOx compounds is currently under development. Varying the chemical composition of these compounds allows a wide range of control over their physical — specifically, optical and electrical — properties. The development of technology for synthesizing such films requires a detailed understanding of their atomic structure. Current views on the atomic structure of nonstoichiometric silicon nitrides and oxides are reviewed and summarized.

Fulltext pdf (431 KB)
Fulltext is also available at DOI: 10.1070/PU2008v051n07ABEH006592
PACS: 33.60.Fy, 61.43.−j, 61.66.Fn, 68.35.Dv, 71.55.Jv (all)
DOI: 10.1070/PU2008v051n07ABEH006592
URL: https://ufn.ru/en/articles/2008/7/c/
000260580700003
2-s2.0-55749101208
2008PhyU...51..699G
Citation: Gritsenko V A "Atomic structure of the amorphous nonstoichiometric silicon oxides and nitrides" Phys. Usp. 51 699–708 (2008)
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Оригинал: Гриценко В А «Атомная структура аморфных нестехиометрических оксидов и нитридов кремния» УФН 178 727–737 (2008); DOI: 10.3367/UFNr.0178.200807c.0727

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