Instruments and methods of investigation

Possibilities and limitations of ion implantation in diamond, and comparison with other doping methods

Lebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation

Diamond is a crystal with extremely strong atomic bonds. It is characterised by very low equilibrium parameters of the solubility and diffusion coefficients of impurities. Ion implantation therefore represents a natural alternative doping method. The published experimental results show that p-type and p+-type layers can be formed by boron ion implantation. Implantation of Li+ and C+ produces n-type layers. Diamond films grown in the presence of phosphorus and sodium can also be electrically conducting. The efficiency of this method of introducing electrically active centres varies strongly with the temperature of diamond during implantation and with the conditions during the subsequent annealing.

PACS: 61.72.Ww, 68.55.Ln (all)
DOI: 10.1070/PU1994v037n04ABEH000023
Citation: Vavilov V S "Possibilities and limitations of ion implantation in diamond, and comparison with other doping methods" Phys. Usp. 37 407–411 (1994)
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RT Journal
T1 Possibilities and limitations of ion implantation in diamond, and comparison with other doping methods
A1 Vavilov,V.S.
PB Physics-Uspekhi
PY 1994
FD 10 Apr, 1994
JF Physics-Uspekhi
JO Phys. Usp.
VO 37
IS 4
SP 407-411
DO 10.1070/PU1994v037n04ABEH000023

Оригинал: Вавилов В С «Возможности и ограничения ионной имплантации в алмаз и их сопоставление с другими методами введения электрически активных примесей» УФН 164 429–433 (1994); DOI: 10.3367/UFNr.0164.199404k.0429

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