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1994

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April

  

Instruments and methods of investigation


Possibilities and limitations of ion implantation in diamond, and comparison with other doping methods


Lebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation

Diamond is a crystal with extremely strong atomic bonds. It is characterised by very low equilibrium parameters of the solubility and diffusion coefficients of impurities. Ion implantation therefore represents a natural alternative doping method. The published experimental results show that p-type and p+-type layers can be formed by boron ion implantation. Implantation of Li+ and C+ produces n-type layers. Diamond films grown in the presence of phosphorus and sodium can also be electrically conducting. The efficiency of this method of introducing electrically active centres varies strongly with the temperature of diamond during implantation and with the conditions during the subsequent annealing.

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Fulltext is also available at DOI: 10.1070/PU1994v037n04ABEH000023
PACS: 61.72.Ww, 68.55.Ln (all)
DOI: 10.1070/PU1994v037n04ABEH000023
URL: https://ufn.ru/en/articles/1994/4/k/
A1994NM92600012
Citation: Vavilov V S "Possibilities and limitations of ion implantation in diamond, and comparison with other doping methods" Phys. Usp. 37 407–411 (1994)
BibTexBibNote ® (generic) BibNote ® (RIS)MedlineRefWorks
TY JOUR
TI Possibilities and limitations of ion implantation in diamond, and comparison with other doping methods
AU Vavilov, V. S.
PB Physics-Uspekhi
PY 1994
JO Physics-Uspekhi
JF Physics-Uspekhi
JA Phys. Usp.
VL 37
IS 4
SP 407-411
UR https://ufn.ru/en/articles/1994/4/k/
ER https://doi.org/10.1070/PU1994v037n04ABEH000023

Оригинал: Вавилов В С «Возможности и ограничения ионной имплантации в алмаз и их сопоставление с другими методами введения электрически активных примесей» УФН 164 429–433 (1994); DOI: 10.3367/UFNr.0164.199404k.0429

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