Diamond is a crystal with extremely strong atomic bonds. It is characterised by very low equilibrium parameters of the solubility and diffusion coefficients of impurities. Ion implantation therefore represents a natural alternative doping method. The published experimental results show that p-type and p⁺-type layers can be formed by boron ion implantation. Implantation of Li⁺ and C⁺ produces n-type layers. Diamond films grown in the presence of phosphorus and sodium can also be electrically conducting. The efficiency of this method of introducing electrically active centres varies strongly with the temperature of diamond during implantation and with the conditions during the subsequent annealing.

PACS: 61.72.Ww, 68.55.Ln (all) DOI: 10.1070/PU1994v037n04ABEH000023 URL: https://ufn.ru/en/articles/1994/4/k/ A1994NM92600012 Citation: Vavilov V S "Possibilities and limitations of ion implantation in diamond, and comparison with other doping methods" Phys. Usp. 37 407–411 (1994) BibTex BibNote ® (generic)BibNote ® (RIS)MedlineRefWorks %0 Journal Article %T Possibilities and limitations of ion implantation in diamond, and comparison with other doping methods %A V. S. Vavilov %I Physics-Uspekhi %D 1994 %J Phys. Usp. %V 37 %N 4 %P 407-411 %U https://ufn.ru/en/articles/1994/4/k/ %U https://doi.org/10.1070/PU1994v037n04ABEH000023 Оригинал: Вавилов В С «Возможности и ограничения ионной имплантации в алмаз и их сопоставление с другими методами введения электрически активных примесей» УФН 164 429–433 (1994); DOI: 10.3367/UFNr.0164.199404k.0429