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Issue 11, 2024
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PACS numbers

68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
  1. V.S. Vavilov, A.R. Chelyadinskii “Impurity ion implantation into silicon single crystals: efficiency and radiation damage” Phys. Usp. 38 333–343 (1995)
    68.55.Ln, 78.50.Ge
  2. V.S. Vavilov “Possibilities and limitations of ion implantation in diamond, and comparison with other doping methods” Phys. Usp. 37 407–411 (1994)
    61.72.Ww, 68.55.Ln (all)
  3. G.V. Spivak, V.I. Petrov, M.K. Antoshin “Local cathodoluminescence and its capabilities for the study of band structure in solids” Sov. Phys. Usp. 29 364–380 (1986)
    78.60.Hk, 71.20.Nr, 68.55.Ln, 73.50.−h (all)
  4. V.S. Vavilov “Some physical aspects of ion implantation” Sov. Phys. Usp. 28 196–206 (1985)
    81.15.Cd, 68.55.Ln, 68.55.Nq, 78.55.−m, 78.60.Hk, 78.66.Jg (all)
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