PACS numbers

85.40.−e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
  1. P.V. Ratnikov, A.P. Silin “Two-dimensional graphene electronics: current status and prospectsPhys. Usp. 61 1139–1174 (2018)
    68.65.Cd, 68.65.Pq, 73.21.Fg, 73.40.Gk, 73.50.−h, 85.30.Tv, 85.40.−e, 85.60.−q, 85.65.+h (all)
  2. Celebrating 50 years of the laser (Scientific session of the General Meeting of the Physical Sciences Division of the Russian Academy of Sciences, 13 December 2010)Phys. Usp. 54 837–870 (2011)
    01.10.Fv, 03.75.−b, 07.57.−c, 32.30.Jc, 37.10.−x, 37.10.De, 37.10.Gh, 42.62.−b, 42.65.−k, 42.70.−a, 42.82.−m, 67.85.−d, 78.67.−n, 85.40.−e, 84.40.Ik (all)
  3. N.N. Ledentsov, J.A. Lott “New-generation vertically emitting lasers as a key factor in the computer communication eraPhys. Usp. 54 853–858 (2011)
    42.62.−b, 42.82.−m, 85.40.−e (all)
  4. A.I. Vorob’eva “Fabrication techniques of electrode arrays for carbon nanotubesPhys. Usp. 52 225–234 (2009)
    73.63.Fg, 85.35.Kt, 85.40.−e (all)
  5. V.B. Timofeev “Current state of semiconductor silicon technology and material scienceSov. Phys. Usp. 33 (6) 492–493 (1990)
    01.30.Vv, 85.40.−e, 81.10.−h, 81.15.−z (all)
  6. M.I. Elinson “Problems of Functional MicroelectronicsSov. Phys. Usp. 16 281–281 (1973)
    85.40.−e, 85.30.−z (all)
  7. K.A. Valiev “Present-day Semiconductor Microelectronics and the Prospects of its DevelopmentSov. Phys. Usp. 16 281–283 (1973)
    85.40.−e, 85.30.−z, 73.40.Kp, 73.40.Lq (all)
  8. A.M. Kugushev “RADIO ELECTRONICS (On the 100th Birthday of A. S. Popov)Sov. Phys. Usp. 2 305–328 (1959)
    84.40.Ua, 41.20.Jb, 85.40.−e, 84.40.Xb (all)
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