PACS numbers

68.55.A− Nucleation and growth Diamond 81.10.−h Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation 82.33.Ya Chemistry of MOCVD and other vapor deposition methods
  1. E.A. Ekimov, M.V. Kondrin “Nontraditional synthesis of nano- and microcrystal diamonds under high static pressures62 199–206 (2019)
    62.50.−p,, 81.40.Vw (all)
  2. V.P. Filonenko, I.P. Zibrov et alDiamond-based superhard composites: new synthesis approaches and application prospects62 207–212 (2019)
    81.10.−h, 89.20.Bb (all)
  3. E.A. Ekimov, M.V. Kondrin “Vacancy-impurity centers in diamond: perspectives of synthesis and applications60 539–558 (2017)
    33.15.Pw, 33.50.Dq, 42.50.Ex, 61.46.−w, 61.71.U-,, 63.20.Pw, 78.55.−m, 81.10.−h (all)
  4. A.K. Rebrov “Possibilities of gas phase synthesis of diamond structures from mixtures of hydrogen and hydrocarbons60 179–186 (2017)
    34.35.+a, 68.43.−h, (all)
  5. I. Akasaki “Fascinated journeys into blue light59 (5) (2016)
    42.72.Bj, 81.10.−h, 85.60.Dw (all)
  6. H. Amano “Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation59 (5) (2016)
    42.72.Bj, 81.10.−h, 85.60.Dw (all)
  7. Sh. Nakamura “Background story of the invention of efficient blue InGaN light emitting diodes59 (5) (2016)
    42.72.Bj, 81.10.−h, 85.60.Dw (all)
  8. V.L. Tsymbalenko “Amazing growth of helium crystal facets58 1059–1073 (2015)
    67.80.−s, 81.10.−h (all)
  9. R.A. Khmelnitskii “Prospects for the synthesis of large single-crystal diamonds58 134–149 (2015)
    68.55.A−,, 81.10.−h, 82.33.Ya (all)
  10. A.I. Zhmakin “Physical aspects of cryobiology51 231–252 (2008)
    44.05.+e, 81.10.−h, 87.15.Aa, 87.54.Br (all)
  11. N.A. Bendeliani “Hydrothermal growth of stishovite (SiO2)45 444–445 (2002)
  12. V.A. Borodin “Development of new-generation equipment for crystal growth from melt. The RAS Experimental Factory of Scientific Engineering in the novel economic conditions43 929–931 (2000)
    07.90.+c, 81.10.−h, 81.10.Fq (all)
  13. V.I. Aleksandrov, T.T. Basiev et alVyacheslav Vasil’evich Osiko (on his 60th birthday)35 (4) 339–340 (1992)
    01.60.+q, 81.10.−h (all)
  14. L.N. Dem’yanets “High-temperature superconductors: growth of single crystals34 (1) 36–73 (1991)
    74.72.−h, 74.62.Bf, 81.10.−h, 74.25.Dw, 61.66.Fn (all)
  15. V.B. Timofeev “Current state of semiconductor silicon technology and material science33 (6) 492–493 (1990)
    01.30.Vv, 85.40.−e, 81.10.−h, 81.15.−z (all)
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