PACS numbers

68.55.A− Nucleation and growth 81.05.ug Diamond 81.10.−h Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation 82.33.Ya Chemistry of MOCVD and other vapor deposition methods
  1. A.G. Syromyatnikov, S.V. Kolesnikov et alFormation and properties of metallic atomic chains and wires64 671–701 (2021)
    05.10.Ln, 61.46.−w, 68.55.A−, 68.65.−k, 73.63.Rt, 75.75.−c (all)
  2. A.A. Lebedev, P.A. Ivanov et alSiC-based electronics (100th anniversary of the Ioffe Institute)62 754–794 (2019)
    81.05.ue, 81.10.−h, 85.30.−z (all)
  3. E.A. Ekimov, M.V. Kondrin “Nontraditional synthesis of nano- and microcrystal diamonds under high static pressures62 199–206 (2019)
    62.50.−p, 81.05.ug, 81.40.Vw (all)
  4. V.P. Filonenko, I.P. Zibrov et alDiamond-based superhard composites: new synthesis approaches and application prospects62 207–212 (2019)
    81.10.−h, 89.20.Bb (all)
  5. E.A. Ekimov, M.V. Kondrin “Vacancy-impurity centers in diamond: perspectives of synthesis and applications60 539–558 (2017)
    33.15.Pw, 33.50.Dq, 42.50.Ex, 61.46.−w, 61.71.U-, 63.20.kp, 63.20.Pw, 78.55.−m, 81.10.−h (all)
  6. A.K. Rebrov “Possibilities of gas phase synthesis of diamond structures from mixtures of hydrogen and hydrocarbons60 179–186 (2017)
    34.35.+a, 68.43.−h, 81.05.ug (all)
  7. I. Akasaki “Fascinated journeys into blue light59 (5) (2016)
    42.72.Bj, 81.10.−h, 85.60.Dw (all)
  8. H. Amano “Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation59 (5) (2016)
    42.72.Bj, 81.10.−h, 85.60.Dw (all)
  9. Sh. Nakamura “Background story of the invention of efficient blue InGaN light emitting diodes59 (5) (2016)
    42.72.Bj, 81.10.−h, 85.60.Dw (all)
  10. V.L. Tsymbalenko “Amazing growth of helium crystal facets58 1059–1073 (2015)
    67.80.−s, 81.10.−h (all)
  11. R.A. Khmelnitskii “Prospects for the synthesis of large single-crystal diamonds58 134–149 (2015)
    68.55.A−, 81.05.ug, 81.10.−h, 82.33.Ya (all)
  12. A.I. Zhmakin “Physical aspects of cryobiology51 231–252 (2008)
    44.05.+e, 81.10.−h, 87.15.Aa, 87.54.Br (all)
  13. N.A. Bendeliani “Hydrothermal growth of stishovite (SiO2)45 444–445 (2002)
    81.10.−h
  14. V.A. Borodin “Development of new-generation equipment for crystal growth from melt. The RAS Experimental Factory of Scientific Engineering in the novel economic conditions43 929–931 (2000)
    07.90.+c, 81.10.−h, 81.10.Fq (all)
  15. V.I. Aleksandrov, T.T. Basiev et alVyacheslav Vasil’evich Osiko (on his 60th birthday)35 (4) 339–340 (1992)
    01.60.+q, 81.10.−h (all)
  16. L.N. Dem’yanets “High-temperature superconductors: growth of single crystals34 (1) 36–73 (1991)
    74.72.−h, 74.62.Bf, 81.10.−h, 74.25.Dw, 61.66.Fn (all)
  17. V.B. Timofeev “Current state of semiconductor silicon technology and material science33 (6) 492–493 (1990)
    01.30.Vv, 85.40.−e, 81.10.−h, 81.15.−z (all)
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