PACS numbers

81.10.−h Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation 89.20.Bb Industrial and technological research and development
  1. A.A. Lebedev, P.A. Ivanov et alSiC-based electronics (100th anniversary of the Ioffe Institute)62 (8) (2019)
    81.05.ue, 81.10.−h, 85.30.−z (all)
  2. V.P. Filonenko, I.P. Zibrov et alDiamond-based superhard composites: new synthesis approaches and application prospects62 207–212 (2019)
    81.10.−h, 89.20.Bb (all)
  3. E.A. Ekimov, M.V. Kondrin “Vacancy-impurity centers in diamond: perspectives of synthesis and applications60 539–558 (2017)
    33.15.Pw, 33.50.Dq, 42.50.Ex, 61.46.−w, 61.71.U-, 63.20.kp, 63.20.Pw, 78.55.−m, 81.10.−h (all)
  4. I. Akasaki “Fascinated journeys into blue light59 (5) (2016)
    42.72.Bj, 81.10.−h, 85.60.Dw (all)
  5. H. Amano “Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation59 (5) (2016)
    42.72.Bj, 81.10.−h, 85.60.Dw (all)
  6. Sh. Nakamura “Background story of the invention of efficient blue InGaN light emitting diodes59 (5) (2016)
    42.72.Bj, 81.10.−h, 85.60.Dw (all)
  7. V.L. Tsymbalenko “Amazing growth of helium crystal facets58 1059–1073 (2015)
    67.80.−s, 81.10.−h (all)
  8. R.A. Khmelnitskii “Prospects for the synthesis of large single-crystal diamonds58 134–149 (2015)
    68.55.A−, 81.05.ug, 81.10.−h, 82.33.Ya (all)
  9. V.E. Fortov, A.A. Makarov “Avenues for the innovative development of energetics in the world and in Russia52 1249–1265 (2009)
    89.20.Bb, 89.30.−g, 89.60.−k (all)
  10. Yu.S. Nechaev “Metallic materials for the hydrogen energy industry and main gas pipelines: complex physical problems of aging, embrittlement, and failure51 681–697 (2008)
    62.20.−x, 81.40.−z, 89.20.Bb (all)
  11. A.I. Zhmakin “Physical aspects of cryobiology51 231–252 (2008)
    44.05.+e, 81.10.−h, 87.15.Aa, 87.54.Br (all)
  12. N.A. Bendeliani “Hydrothermal growth of stishovite (SiO2)45 444–445 (2002)
    81.10.−h
  13. V.A. Borodin “Development of new-generation equipment for crystal growth from melt. The RAS Experimental Factory of Scientific Engineering in the novel economic conditions43 929–931 (2000)
    07.90.+c, 81.10.−h, 81.10.Fq (all)
  14. V.I. Aleksandrov, T.T. Basiev et alVyacheslav Vasil’evich Osiko (on his 60th birthday)35 (4) 339–340 (1992)
    01.60.+q, 81.10.−h (all)
  15. L.N. Dem’yanets “High-temperature superconductors: growth of single crystals34 (1) 36–73 (1991)
    74.72.−h, 74.62.Bf, 81.10.−h, 74.25.Dw, 61.66.Fn (all)
  16. A.P. Aleksandrov, S.T. Belyaev et alYurii Efremovich Nesterikhin (on his sixtieth birthday)33 (10) 870–871 (1990)
    01.60.+q, 52.35.Tc, 52.50.Lp, 52.70.Kz, 89.20.Bb (all)
  17. V.B. Timofeev “Current state of semiconductor silicon technology and material science33 (6) 492–493 (1990)
    01.30.Vv, 85.40.−e, 81.10.−h, 81.15.−z (all)
  18. A.P. Aleksandrov, S.V. Vonsovskii et alMikhail Nikolaevich Mikheev (Obituary)33 (4) 303–304 (1990)
    01.60.+q, 01.10.Cr, 81.70.−q, 75.50.Bb, 75.80.+q, 89.20.Bb (all)
  19. A.P. Aleksandrov, A.M. Baldin et alAleksandr Grigor’evich Zel’dovlch (Obituary)31 173–174 (1988)
    01.60.+q, 01.10.Cr, 07.20.Mc, 89.20.Kk, 89.20.Bb (all)
  20. The XXVII Congress of the CPSU and the tasks for Soviet science29 123–125 (1986)
    01.10.Hx, 89.65.Gh, 89.20.Bb (all)
  21. A.I. Leipunskii “Use of nuclear physics in related fields of science and national economy11 289–293 (1968)
    89.20.Bb, 89.20.Dd, 89.65.Gh (all)
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