44.05.+e Analytical and numerical techniques 81.10.−h Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation 87.15.Aa Theory and modeling; computer simulation 87.54.Br Thermotherapy (hyperthermia and cryogenic therapy)

A.A. Lebedev, P.A. Ivanov et al “SiC-based electronics (100th anniversary of the Ioffe Institute)” 62 754–794 (2019)
81.05.ue, 81.10.−h, 85.30.−z (all)
V.P. Filonenko, I.P. Zibrov et al “Diamond-based superhard composites: new synthesis approaches and application prospects” 62 207–212 (2019)
81.10.−h, 89.20.Bb (all)
E.A. Ekimov, M.V. Kondrin “Vacancy-impurity centers in diamond: perspectives of synthesis and applications” 60 539–558 (2017)
33.15.Pw, 33.50.Dq, 42.50.Ex, 61.46.−w, 61.71.U-, 63.20.kp, 63.20.Pw, 78.55.−m, 81.10.−h (all)
I. Akasaki “Fascinated journeys into blue light” 59 (5) (2016)
42.72.Bj, 81.10.−h, 85.60.Dw (all)
H. Amano “Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation” 59 (5) (2016)
42.72.Bj, 81.10.−h, 85.60.Dw (all)
Sh. Nakamura “Background story of the invention of efficient blue InGaN light emitting diodes” 59 (5) (2016)
42.72.Bj, 81.10.−h, 85.60.Dw (all)
V.L. Tsymbalenko “Amazing growth of helium crystal facets” 58 1059–1073 (2015)
67.80.−s, 81.10.−h (all)
R.A. Khmelnitskii “Prospects for the synthesis of large single-crystal diamonds” 58 134–149 (2015)
68.55.A−, 81.05.ug, 81.10.−h, 82.33.Ya (all)
A.I. Zhmakin “Physical aspects of cryobiology” 51 231–252 (2008)
44.05.+e, 81.10.−h, 87.15.Aa, 87.54.Br (all)
V.M. Byakov, S.V. Stepanov “The mechanism for the primary biological effects of ionizing radiation” 49 469–487 (2006)
82.39.−k, 87.50.−a, 87.50.Gi, 87.54.Br (all)
N.A. Bendeliani “Hydrothermal growth of stishovite (SiO₂)” 45 444–445 (2002)
81.10.−h
V.A. Borodin “Development of new-generation equipment for crystal growth from melt. The RAS Experimental Factory of Scientific Engineering in the novel economic conditions” 43 929–931 (2000)
07.90.+c, 81.10.−h, 81.10.Fq (all)
V.I. Aleksandrov, T.T. Basiev et al “Vyacheslav Vasil’evich Osiko (on his 60th birthday)” 35 (4) 339–340 (1992)
01.60.+q, 81.10.−h (all)
L.N. Dem’yanets “High-temperature superconductors: growth of single crystals” 34 (1) 36–73 (1991)
74.72.−h, 74.62.Bf, 81.10.−h, 74.25.Dw, 61.66.Fn (all)
V.B. Timofeev “Current state of semiconductor silicon technology and material science” 33 (6) 492–493 (1990)
01.30.Vv, 85.40.−e, 81.10.−h, 81.15.−z (all)
M.I. Tribel’skii “Numerical investigations of phase transitions and critical phenomena” 31 99–99 (1988)
64.60.Cn, 64.60.Ht, 01.30.Vv, 87.15.Aa, 87.16.Dg (all)
D.S. Chernavskii “Modeling of Certain Biological Processes” 15 352–353 (1972)
87.16.Uv, 87.16.Dg, 87.15.Mi, 87.15.Rn, 87.15.Aa (all)

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