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Reviews of topical problems


Structure of silicon/oxide and nitride/oxide interfaces


Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation

We systematize and generalize modern concepts on the atomic structure of silicon/insulator (Si/SiO2, Si=SiOxNy) and insulator/insulator (Si3N4/SiO2) interfaces in the structures underlying the operation of silicon devices.

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Fulltext is also available at DOI: 10.3367/UFNe.0179.200909a.0921
PACS: 61.43.−j, 61.66.Fn, 68.35.Dv, 71.55.Jv (all)
DOI: 10.3367/UFNe.0179.200909a.0921
URL: https://ufn.ru/en/articles/2009/9/a/
000274047000001
2-s2.0-76149089186
2009PhyU...52..869G
Citation: Gritsenko V A "Structure of silicon/oxide and nitride/oxide interfaces" Phys. Usp. 52 869–877 (2009)
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Оригинал: Гриценко В А «Структура границ раздела кремний/оксид и нитрид/оксид» УФН 179 921–930 (2009); DOI: 10.3367/UFNr.0179.200909a.0921

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