Structure of silicon/oxide and nitride/oxide interfaces

V.A. Gritsenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation

We systematize and generalize modern concepts on the atomic structure of silicon/insulator (Si/SiO₂, Si=SiO_xN_y) and insulator/insulator (Si₃N₄/SiO₂) interfaces in the structures underlying the operation of silicon devices.

PACS: 61.43.−j, 61.66.Fn, 68.35.Dv, 71.55.Jv (all)
DOI: 10.3367/UFNe.0179.200909a.0921
URL: https://ufn.ru/en/articles/2009/9/a/
Web of Science

000274047000001
Scopus

2-s2.0-76149089186
ADS NASA

2009PhyU...52..869G
Citation: Gritsenko V A "Structure of silicon/oxide and nitride/oxide interfaces" Phys. Usp. 52 869–877 (2009)

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Оригинал: Гриценко В А «Структура границ раздела кремний/оксид и нитрид/оксид» УФН 179 921–930 (2009); DOI: 10.3367/UFNr.0179.200909a.0921

References (43) ↓ Cited by (26) Similar articles (20)

Gritsenko V A Stroenie i Elektronnaya Struktura Amorfnykh Dielektrikov v Kremnievykh MDP-strukturakh (Novosibirsk: Nauka, 1993)
Gritsenko V A "Electronic structure and optical properties of silicon nitride" In Silicon Nitride In Electronics (Ed. A V Rzhanov) (Amsterdam: Elsevier, 1988)
Lowenstam H A, Weiner S On Biomineralization (Oxford: Oxford Univ. Press, 1989)
Green M L et al. J. Appl. Phys. 90 2057 (2001)
Gritsenko V A et al. Solid-State Electron. 47 1651 (2003)
Lee C-H, Park K-C, Kim K Appl. Phys. Lett. 87 073510 (2005)
Kingon A I, Maria J-P, Streiffer S K Nature 406 1032 (2000)
Robertson J Rep. Prog. Phys. 69 327 (2006)
Mishima T D, Lenahan P M, Weber W Appl. Phys. Lett. 76 3771 (2000)
Albohn J et al. J. Appl. Phys. 88 842 (2000)
Stesmans A, Van Gorp G Phys. Rev. B 52 8904 (1995)
Irene E A Solid-State Electron. 45 1207 (2001)
Gonon N et al. J. Appl. Phys. 76 5242 (1994)
Ayupov B M, Gritsenko V A, Wong H, Kim C W J. Electrochem. Soc. 153 F277 (2006)
Grunthaner F J et al. Phys. Rev. Lett. 43 1683 (1979)
Gritsenko V A Usp. Fiz. Nauk 178 727 (2008); Gritsenko V A Phys. Usp. 51 699 (2008)
Fukuda H, Yasuda M, Iwabuchi T Appl. Phys. Lett. 61 693 (1992)
Gritsenko V A et al. J. Appl. Phys. 86 3234 (1999)
Bell F G, Ley L Phys. Rev. B 37 8383 (1988)
Queeney K T et al. J. Appl. Phys. 87 1322 (2000)
Himpsel F J et al. Phys. Rev. B 38 6084 (1988)
Oh J H et al. Phys. Rev. B 63 205310 (2001)
Terada N et al. Phys. Rev. B 46 2312 (1992)
Skuja L J. Non-Crystal. Solids 239 16 (1998)
Pacchioni G, Ieranò G Phys. Rev. Lett. 79 753 (1997)
Pacchioni G, Ieranò G Phys. Rev. B 56 7304 (1997)
Raghavachari K, Ricci D, Pacchioni G J. Chem. Phys. 116 825 (2002)
Hosono H et al. Phys. Rev. B 44 12043 (1991)
Vasquez R P et al. Appl. Phys. Lett. 44 969 (1984)
Gritsenko V A et al. J. Vac. Sci. Tech. B 21 241 (2003)
Alay J L, Hirose M J. Appl. Phys. 81 1606 (1997)
Okhonin S et al. Appl. Phys. Lett. 74 842 (1999)
Demkov A A, Sankey O F Phys. Rev. Lett. 83 2038 (1999)
Weinberg Z A Solid-State Electron. 20 11 (1977)
Gritsenko V A, Mogil’nikov K P, Rzhanov A V Pis’ma ZhETF 27 400 (1978); Gritsenko V A, Mogil’nikov K P, Rzhanov A V JETP Lett. 27 375 (1978)
Witham H S, Lenahan P M Appl. Phys. Lett. 51 1007 (1987)
Pacchioni G, Ieranò G, Márquez A M Phys. Rev. Lett. 81 377 (1998)
Gritsenko V A et al. Phys. Rev. Lett. 81 1054 (1998)
Lu Z H et al. Appl. Phys. Lett. 67 2836 (1995)
Gritsenko V A et al. J. Electrochem. Soc. 146 780 (1999)
Roizin Ya, Gritsenko V "ONO structures in modern microelectronics: material science, characterization and application" In Dielectric Films For Advanced Microelectronics (Eds M Baklanov, M Greeen, K Maex) (Chichester: John Wiley & Sons, 2007)
Bolotin V P i dr. Dokl. Akad. Nauk SSSR 310 114 (1990)
Chaiyasena I A, Lenahan P M, Dunn G J J. Appl. Phys. 72 820 (1992)