Structure of silicon/oxide and nitride/oxide interfaces

V.A. Gritsenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation

We systematize and generalize modern concepts on the atomic structure of silicon/insulator (Si/SiO₂, Si=SiO_xN_y) and insulator/insulator (Si₃N₄/SiO₂) interfaces in the structures underlying the operation of silicon devices.

PACS: 61.43.−j, 61.66.Fn, 68.35.Dv, 71.55.Jv (all)
DOI: 10.3367/UFNe.0179.200909a.0921
URL: https://ufn.ru/en/articles/2009/9/a/
Web of Science

000274047000001
Scopus

2-s2.0-76149089186
ADS NASA

2009PhyU...52..869G
Citation: Gritsenko V A "Structure of silicon/oxide and nitride/oxide interfaces" Phys. Usp. 52 869–877 (2009)

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%0 Journal Article
%T Structure of silicon/oxide and nitride/oxide interfaces
%A V. A. Gritsenko
%I Physics-Uspekhi
%D 2009
%J Phys. Usp.
%V 52
%N 9
%P 869-877
%U https://ufn.ru/en/articles/2009/9/a/
%U https://doi.org/10.3367/UFNe.0179.200909a.0921

Оригинал: Гриценко В А «Структура границ раздела кремний/оксид и нитрид/оксид» УФН 179 921–930 (2009); DOI: 10.3367/UFNr.0179.200909a.0921