Structure of silicon/oxide and nitride/oxide interfaces

V.A. Gritsenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation

We systematize and generalize modern concepts on the atomic structure of silicon/insulator (Si/SiO₂, Si=SiO_xN_y) and insulator/insulator (Si₃N₄/SiO₂) interfaces in the structures underlying the operation of silicon devices.

PACS: 61.43.−j, 61.66.Fn, 68.35.Dv, 71.55.Jv (all)
DOI: 10.3367/UFNe.0179.200909a.0921
URL: https://ufn.ru/en/articles/2009/9/a/
Web of Science

000274047000001
Scopus

2-s2.0-76149089186
ADS NASA

2009PhyU...52..869G
Citation: Gritsenko V A "Structure of silicon/oxide and nitride/oxide interfaces" Phys. Usp. 52 869–877 (2009)

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RefWorks

RT Journal
T1 Structure of silicon/oxide and nitride/oxide interfaces
A1 Gritsenko,V.A.
PB Physics-Uspekhi
PY 2009
FD 10 Sep, 2009
JF Physics-Uspekhi
JO Phys. Usp.
VO 52
IS 9
SP 869-877
DO 10.3367/UFNe.0179.200909a.0921
LK https://ufn.ru/en/articles/2009/9/a/

Оригинал: Гриценко В А «Структура границ раздела кремний/оксид и нитрид/оксид» УФН 179 921–930 (2009); DOI: 10.3367/UFNr.0179.200909a.0921