Structure of silicon/oxide and nitride/oxide interfaces

V.A. Gritsenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation

We systematize and generalize modern concepts on the atomic structure of silicon/insulator (Si/SiO₂, Si=SiO_xN_y) and insulator/insulator (Si₃N₄/SiO₂) interfaces in the structures underlying the operation of silicon devices.

PACS: 61.43.−j, 61.66.Fn, 68.35.Dv, 71.55.Jv (all)
DOI: 10.3367/UFNe.0179.200909a.0921
URL: https://ufn.ru/en/articles/2009/9/a/
Web of Science

000274047000001
Scopus

2-s2.0-76149089186
ADS NASA

2009PhyU...52..869G
Citation: Gritsenko V A "Structure of silicon/oxide and nitride/oxide interfaces" Phys. Usp. 52 869–877 (2009)

BibTexBibNote ® (generic)BibNote ® (RIS)

MedlineRefWorks

PT Journal Article
TI Structure of silicon/oxide and nitride/oxide interfaces
AU Gritsenko V A
FAU Gritsenko VA
DP 10 Sep, 2009
TA Phys. Usp.
VI 52
IP 9
PG 869-877
RX 10.3367/UFNe.0179.200909a.0921
URL https://ufn.ru/en/articles/2009/9/a/
SO Phys. Usp. 2009 Sep 10;52(9):869-877

Оригинал: Гриценко В А «Структура границ раздела кремний/оксид и нитрид/оксид» УФН 179 921–930 (2009); DOI: 10.3367/UFNr.0179.200909a.0921