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Transport mechanisms of electrons and holes in dielectric films

 a,  b
a Institute of Automation and Electrometry, Siberian Branch of the Russian Academy of Sciences, prosp. akad. Koptyuga 1, Novosibirsk, 630090, Russian Federation
b Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Lavrent'eva 13, Novosibirsk, 630090, Russian Federation

Electron and hole transport mechanisms in amorphous silicon oxide, silicon nitride and aluminum oxide, dielectric materials of high relevance to silicon device technology, are reviewed. It is established that the widely accepted Frenkel model provides a formal description of transport in trap-containing insulators, but to obtain quantitative agreement, nonphysical model parameters should be introduced. It is shown that the multiphonon ionization of traps is a good model to consistently describe charge transport in insulators with traps.

Text can be downloaded in Russian. English translation is available here.
PACS: 72.20.Ht, 72.20.Jv, 72.80.Sk, 73.40.Sx (all)
DOI: 10.3367/UFNe.0183.201310h.1099
URL: https://ufn.ru/en/articles/2013/10/c/
Citation: Nasyrov K A, Gritsenko V A "Transport mechanisms of electrons and holes in dielectric films" Phys. Usp. 56 999–1012 (2013)
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Received: 4th, March 2013, 11th, June 2013

Оригинал: Насыров К А, Гриценко В А «Механизмы переноса электронов и дырок в диэлектрических плёнках» УФН 183 1099–1114 (2013); DOI: 10.3367/UFNr.0183.201310h.1099

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