RSS feeds
РусскийEnglish
Issue 4, 2024
Volume year page
Issues Authors PACS Subscription For authors

Issues

 / 

2008

 / 

February

←  →

Reviews of topical problems


Extremely dense arrays of germanium and silicon nanostructures

 a, b,  b
a Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation
b Quantum-Phase Electronics Center, Department of Applied Physics, The University of Tokyo and Japan Science and Technology Agency, CREST, 7-3-1 Hongo, Tokyo, 113-8656, Japan

Results of investigations into surface processes of the formation of germanium and silicon nanostructures are analyzed. A mechanism of three-dimensional island nucleation and relaxation of strained two-dimensional layers in heteroepitaxy of germanium on silicon, which initiates spontaneous island growth, is considered. The oxidation of the silicon surface prior to germanium or silicon deposition drastically alters the growth mechanism, leading to the formation of islands with an extremely high areal density of 1012-1013 cm-2 and with sizes of less than 10 nm. The effects of spatial quantization determine their properties. Moreover, arrays of these islands form a unique surface for the growth of Si layers that are able to emit photons in the 1.5-1.6-μm wavelength range.

Fulltext pdf (2 MB)
Fulltext is also available at DOI: 10.1070/PU2008v051n02ABEH006344
PACS: 78.55.Ap, 81.07.−b, 81.16.−c (all)
DOI: 10.1070/PU2008v051n02ABEH006344
URL: https://ufn.ru/en/articles/2008/2/b/
000256729400002
2-s2.0-45149130684
2008PhyU...51..133S
Citation: Shklyaev A A, Ichikawa M "Extremely dense arrays of germanium and silicon nanostructures" Phys. Usp. 51 133–161 (2008)
BibTexBibNote ® (generic)BibNote ® (RIS)MedlineRefWorks

Оригинал: Шкляев А А, Ичикава М «Предельно плотные массивы наноструктур германия и кремния» УФН 178 139–169 (2008); DOI: 10.3367/UFNr.0178.200802b.0139

References (199) ↓ Cited by (66) Similar articles (20)

  1. Ledentsov N N i dr. Fiz. Tekh. Poluprovodn. 32 385 (1998); Ledentsov N N et al. Semicond. 32 343 (1998)
  2. Pchelyakov O P i dr. Fiz. Tekh. Poluprovodn. 34 1281 (2000); Pchelyakov O P et al. Semicond. 34 1229 (2000)
  3. Bimberg D, Grundmann M, Ledentsov N N Quantom Dot Heterostructures (Toronto: John Wiley & Sons, 2001)
  4. Yakimov A I, Dvurechenskii A V, Nikiforov A I In Handbook Of Semiconductor Nanostructures And Nanodevices Vol. 1 (Nanotechnology Book Ser., Vol. 4, Eds A A Balandin, K L Wang) (Stevenson Ranch, Calif.: Am. Sci. Publ.) 2 (2006)
  5. Kukushkin C A, Osipov A V Usp. Fiz. Nauk 168 1083 (1998); Kukushkin S A, Osipov A V Phys. Usp. 41 983 (1998)
  6. Brunner K Rep. Prog. Phys. 65 27 (2002)
  7. Mo Y-W et al. Phys. Rev. Lett. 65 1020 (1990)
  8. Yakimov A I et al. Appl. Phys. Lett. 75 1413 (1999)
  9. Schmidt O G et al. Appl. Phys. Lett. 71 2340 (1997)
  10. Peng C S et al. Phys. Rev. B 57 8805 (1998)
  11. Shklyaev A A, Shibata M, Ichikawa M Phys. Rev. B 62 1540 (2000)
  12. Sakamoto T et al. Appl. Phys. Lett. 47 617 (1985)
  13. Mo Y-W et al. Phys. Rev. Lett. 63 2393 (1989)
  14. Latyshev A V, Aseev A L Monoatomnye Stupeni na Poverkhnosti Kremniya (Novosibirsk: Izd-vo SO RAN, 2006)
  15. Gossmann H J, Schubert E F CRC Crit. Rev. Solid State Mater. 18 1 (1993)
  16. Lifshits V G, Repinskii S M Protsessy na Poverkhnosti Tverdykh Tel (Vladivostok: Dal’nauka, 2003)
  17. Shklyaev A A, Ichikawa M Phys. Rev. B 65 045307 (2001)
  18. Shklyaev A A et al. Appl. Phys. Lett. 88 121919 (2006)
  19. Asai M, Ueba H, Tatsuyama C J. Appl. Phys. 58 2577 (1985)
  20. Marée P M J et al. Surf. Sci. 191 305 (1987)
  21. Eaglesham D J, Cerullo M Phys. Rev. Lett. 64 1943 (1990)
  22. Köhler U et al. Surf. Sci. 248 321 (1991)
  23. Snyder C W et al. Phys. Rev. Lett. 66 3032 (1991)
  24. Leonard D et al. Appl. Phys. Lett. 63 3203 (1993)
  25. LeGoues F K et al. Surf. Sci. 349 249 (1996)
  26. Xie Q et al. Phys. Rev. Lett. 75 2542 (1995)
  27. Tersoff J, Teichert C, Lagally M G Phys. Rev. Lett. 76 1675 (1996)
  28. Voigtländer B, Zinner A Appl. Phys. Lett. 63 3055 (1993)
  29. Goryll M et al. Appl. Phys. Lett. 71 410 (1997)
  30. Ansari Z A, Arai T, Tomitori M Surf. Sci. 574 L17 (2005)
  31. Ratto F et al. Phys. Rev. Lett. 96 096103 (2006)
  32. Tomitori M et al. Surf. Sci. 301 214 (1994)
  33. Omi H, Ogino T Appl. Phys. Lett. 71 2163 (1997)
  34. Shklyaev A A, Shibata M, Ichikawa M Surf. Sci. 416 192 (1998)
  35. Tersoff J, LeGoues F K Phys. Rev. Lett. 72 3570 (1994)
  36. Shchukin V A, Bimberg D Rev. Mod. Phys. 71 1125 (1999)
  37. Brunner K Rep. Prog. Phys. 65 27 (2002)
  38. Stoyanov S, Kashchiev D In Current Topic In Materials Science Vol. 7 (Ed. E Kaldis) (Amsterdam: North-Holland, 1981) p. 69
  39. Zangwill A In Evolution Of Surface And Thin Film Microstructure (MRS Symp. Proc., Vol. 280, Eds H A Atwater et al.) (Pittsburgh, Pa.: MRS, 1993) p. 121
  40. Venables J A Surf. Sci. 299/300 798 (1994)
  41. Markov I Phys. Rev. B 56 12544 (1997)
  42. Shklyaev A A, Ichikawa M In Handbook Of Semiconductor Nanostructures And Nanodevices Vol. 1 (Nanotechnology Book Ser., Vol. 4, Eds A A Balandin, K L Wang) (Stevenson Ranch, Calif.: Am. Sci. Publ.) 8 (2006)
  43. Zuo J-K et al. Phys. Rev. Lett. 72 3064 (1994)
  44. Amar J G, Family F Thin Solid Films 272 208 (1996)
  45. Shklyaev A A, Aono M, Suzuki T Surf. Sci. 423 61 (1999)
  46. Shklyaev A A, Shibata M, Ichikawa M Phys. Rev. B 58 15647 (1998)
  47. Voigtländer B et al. Phys. Rev. B 51 7583 (1995)
  48. Rauscher H, Braun J, Behm R J Phys. Rev. Lett. 96 116101 (2006)
  49. Selloni A, Takeuchi N, Tosatti E Surf. Sci. 331 - 333 995 (1995)
  50. Allen F G J. Phys. Chem. Solids 19 87 (1961)
  51. Arthur J R J. Phys. Chem. Solids 25 583 (1964)
  52. Shklyaev A A, Repinskii S M Fiz. Tekh. Poluprovodn. 14 1300 (1980)
  53. Spencer B J, Tersoff J Phys. Rev. Lett. 79 4858 (1997)
  54. LeGoues F K et al. Phys. Rev. B 44 12894 (1991)
  55. Minoda H et al. Surf. Sci. 357-358 418 (1996)
  56. Shklyaev A A, Shibata M, Ichikawa M Thin Solid Films 343-344 532 (1999)
  57. Zinke-Allmang M, Feldman L C, Grabow M H Surf. Sci. Rep. 16 377 (1992)
  58. Deelman P W, Thundat T, Schowalter L J Appl. Surf. Sci. 104/105 510 (1996)
  59. Bolkhovityanov Yu B, Pchelyakov O P, Chikichev S I Usp. Fiz. Nauk 171 689 (2001); Bolkhovityanov Yu B, Pchelyakov O P, Chikichev S I Phys. Usp. 44 655 (2001)
  60. Osipov A V et al. Phys. Rev. B 64 205421 (2001)
  61. Shklyaev A A, Shibata M, Ichikawa M J. Vac. Sci. Technol. B 19 103 (2001)
  62. Shklyaev A A, Ichikava M Usp. Fiz. Nauk 176 913 (2006); Shklyaev A A, Ichikawa M Phys. Usp. 49 887 (2006)
  63. Vescan L J. Phys. Condens. Matter 14 8235 (2002)
  64. Gossmann H-J, Feldman L C, Gibson W M Surf. Sci. 155 413 (1985)
  65. Hammar M et al. Surf. Sci. 349 129 (1996)
  66. Sakamoto K et al. Jpn. J. Appl. Phys. 26 666 (1987)
  67. Miki K, Sakamoto K, Sakamoto T Mater. Res. Soc. Symp. Proc. 148 323 (1989)
  68. Osipov A V et al. Appl. Surf. Sci. 188 156 (2002)
  69. Goldfarb I, Banks-Sills L, Eliasi R Phys. Rev. Lett. 97 206101 (2006)
  70. Müller P, Saúl A Surf. Sci. Rep. 54 157 (2004)
  71. Latyshev A V et al. Surf. Sci. 213 157 (1989)
  72. Shibata M, Shklyaev A A, Ichikawa M J. Electron Microsc. 49 217 (2000)
  73. Latyshev A V, Krasilnikov A B, Aseev A L Surf. Sci. 311 395 (1994)
  74. Ogino T, Hibino H, Hommal Y Jnp. J. Appl. Phys. 34 L668 (1995)
  75. Ogino T et al. Surf. Sci. 514 1 (2002)
  76. Zhang Z et al. Surf. Sci. 497 93 (2002)
  77. Shklyaev A A, Shibata M, Ichikawa M Appl. Phys. Lett. 72 320 (1998)
  78. Fujita S et al. Appl. Phys. Lett. 69 638 (1996)
  79. Fujita S et al. J. Vac. Sci. Technol. A 15 1493 (1997)
  80. Watanabe H, Ichikawa M Rev. Sci. Instrum. 67 4185 (1996)
  81. Shklyaev A A, Ichikawa M J. Vac. Sci. Technol. B 24 739 (2006)
  82. Horn-von Hoegen M et al. Phys. Rev. B 49 2637 (1994)
  83. Peng C S et al. Phys. Rev. B 57 8805 (1998)
  84. Schmidt O G et al. Appl. Phys. Lett. 71 2340 (1997)
  85. Butz R, Lüth H Thin Solid Films 336 69 (1998)
  86. Kim J Y et al. Thin Solid Films 369 96 (2000)
  87. Yoo K, Zhang Z, Wendelken J F Jpn. J. Appl. Phys. 42 L1232 (2003)
  88. Li A P et al. Phys. Rev. B 69 245310 (2004)
  89. Wang L et al. Nanotechnology 13 714 (2002)
  90. Kolobov A V et al. Appl. Phys. Lett. 78 2563 (2001)
  91. Yakimov A I et al. Phys. Rev. B 67 125318 (2003)
  92. Kanjilal A et al. Appl. Phys. Lett. 82 1212 (2003)
  93. Li Q et al. Appl. Phys. Lett. 83 5032 (2003)
  94. Nikiforov A I i dr. Fiz. Tverd. Tela 46 80 (2004); Nikiforov A I et al. Phys. Solid State 46 77 (2004)
  95. Barski A et al. Appl. Phys. Lett. 77 3541 (2000)
  96. Derivaz M et al. Appl. Phys. Lett. 84 3295 (2004)
  97. Shimizu N et al. Ultramicroscopy 18 453 (1985)
  98. Kosolobov S S, Aseev A L, Latyshev A V Fiz. Tekh. Poluprovodn. 35 1084 (2001); Kosolobov S S, Aseev A L, Latyshev A V Semicond. 35 1038 (2001)
  99. Shklyaev A A, Suzuki T Surf. Sci. 351 64 (1996)
  100. Frantsuzov A A, Makrushin N I Surf. Sci. 40 320 (1973)
  101. Shklyaev A A, Ichikawa M Surf. Sci. 514 19 (2002)
  102. Schmidt A A et al. Surf. Sci. 349 301 (1996)
  103. Fujita K, Watanabe H, Ichikawa M J. Cryst. Growth 188 197 (1998)
  104. Johnson K E, Engel T Phys. Rev. Lett. 69 339 (1992)
  105. Chambliss D D, Johnson K E Phys. Rev. B 50 5012 (1994)
  106. Zinke-Allmang M Thin Solid Films 346 1 (1999)
  107. Weinberg W H In Kinetics Of Interface Reactions (Springer Series in Surface Sciences, Vol. 8, Eds M Grunze, H J Kreuzer) (New York: Springer-Verlag, 1987) p. 94
  108. Frankl D R, Venables J A Adv. Phys. 19 409 (1970)
  109. Campbell C T Surf. Sci. Rep. 27 1 (1997)
  110. Kolobov A V et al. J. Vac. Sci. Technol. A 20 1116 (2002)
  111. Kolobov A V et al. Nucl. Instrum. Meth. Phys. Res. B 199 174 (2003)
  112. Wei S et al. J. Appl. Phys. 82 4810 (1997)
  113. Kolobov A V J. Appl. Phys. 87 2926 (2000)
  114. Milekhin A G i dr. Fiz. Tverd. Tela 46 94 (2004); Milekhin A G et al. Phys. Solid State 46 92 (2004)
  115. Boscherini F et al. Appl. Phys. Lett. 76 682 (2000)
  116. Ratto F et al. Appl. Phys. Lett. 84 4526 (2004)
  117. Migas D B et al. Phys. Rev. B 69 235318 (2004)
  118. Kolobov A V et al. Appl. Phys. Lett. 81 3855 (2002)
  119. Volodin V A i dr. Fiz. Tekh. Poluprovodn. 37 1220 (2003); Volodin V A et al. Semicond. 37 1190 (2003)
  120. Fonseca A et al. Nucl. Instrum. Meth. Phys. Res. B 249 462 (2006)
  121. Sutter P, Lagally M G Phys. Rev. Lett. 81 3471 (1998)
  122. Chaparro S A, Zhang Y, Drucker J Appl. Phys. Lett. 76 3534 (2000)
  123. Kamins T I et al. Appl. Phys. A 67 727 (1998)
  124. Lang C et al. Phys. Rev. Lett. 97 226104 (2006)
  125. Shklyaev A A, Zielasek V Surf. Sci. 541 234 (2003)
  126. Saranin A A et al. Appl. Surf. Sci. 243 199 (2005)
  127. Ohkubo K et al. Surf. Sci. 260 44 (1992)
  128. Shklyaev A A, Aono M, Suzuki T Phys. Rev. B 54 10890 (1996)
  129. Raschke M B, Bratu P, Höfer U Surf. Sci. 410 351 (1998)
  130. Ol’shanetskii B 3, Repinskii S M, Shklyaev A A Pis’ma ZhETF 25 195 (1977); Ol’shanetskii B Z, Repinskii S M, Shklyaev A A JETP Lett. 25 178 (1977)
  131. Olshanetsky B Z, Shklyaev A A Surf. Sci. 82 445 (1979)
  132. Olshanetsky B Z, Mashanov V I Surf. Sci. 111 414 (1981)
  133. Vescan L, Grimm K, Dieker C J. Vac. Sci. Technol. B 16 1549 (1998)
  134. Shibata M et al. J. Cryst. Growth 220 449 (2000)
  135. Kruchinin V N, Repinskii S M, Shklyaev A A Poverkhnost’ (3) 60 (1987)
  136. Kruchinin V N, Repinsky S M, Shklyaev A A Surf. Sci. 275 433 (1992)
  137. Shibata M et al. Phys. Rev. B 61 7499 (2000)
  138. Hirayama H, Hiroi M, Ide T Phys. Rev. B 48 17331 (1993)
  139. Fujita K, Watanabe H, Ichikawa M Appl. Phys. Lett. 70 2807 (1997)
  140. Ehrlich G, Hudda F G J. Chem. Phys. 44 1039 (1966)
  141. Schwoebel R L, Shipsey E J J. Appl. Phys. 37 3682 (1966)
  142. Schwoebel R L J. Appl. Phys. 40 614 (1969)
  143. Frantsuzov A A, Makrushin N I Zh. Tekh. Fiz. 45 600 (1975); Frantsuzov A A, Makrushin N I Sov. Phys. Tech. Phys. 20 372 (1975)
  144. Frantsuzov A A, Makrushin N I Thin Solid Films 32 247 (1976)
  145. Tromp R et al. Phys. Rev. Lett. 55 2332 (1985)
  146. Rubloff G W J. Vac. Sci. Technol. A 8 1857 (1990)
  147. Eaglesham D J et al. Phys. Rev. Lett. 70 1643 (1993)
  148. Sudoh K, Iwasaki H Phys. Rev. Lett. 87 216103 (2001)
  149. Bermond J M et al. Surf. Sci. 330 48 (1995)
  150. Myler U, Jacobi K Surf. Sci. 220 353 (1989)
  151. Schreiner J, Jacobi K, Selke W Phys. Rev. B 49 2706 (1994)
  152. Olshanetsky B Z et al. Surf. Sci. 306 327 (1994)
  153. Dabrowski J, Müssig H J, Wolff G Phys. Rev. Lett. 73 1660 (1994)
  154. Ichimiya A, Tanaka Y, Ishiyama K Phys. Rev. Lett. 76 4721 (1996)
  155. Pavesi L et al. Nature 408 440 (2000)
  156. Nakamura Y et al. J. Appl. Phys. 95 5014 (2004)
  157. Vostokov N V i dr. Pis’ma ZhETF 76 425 (2002); Vostokov N V et al. JETP Lett. 76 365 (2002)
  158. Denker U et al. Appl. Phys. Lett. 82 454 (2003)
  159. Novikov A V et al. Physica E 16 467 (2003)
  160. Yu P Y, Cardona M Fundamentals Of Semiconductors: Physics And Materials Properties (Berlin: Springer, 1996)
  161. Fukatsu S et al. Appl. Phys. Lett. 71 258 (1997)
  162. Eberl K et al. Thin Solid Films 369 33 (2000)
  163. Dvurechenskii A V, Yakimov A I Fiz. Tekh. Poluprovodn. 35 1143 (2001); Dvurechenskii A V, Yakimov A I Semicond. 35 1095 (2001)
  164. Yakimov A I et al. Phys. Rev. B 63 045312 (2001)
  165. Yam V et al. Thin Solid Films 380 78 (2000)
  166. Sunamura H et al. Appl. Phys. Lett. 66 3024 (1995)
  167. Palange E et al. Appl. Phys. Lett. 68 2982 (1996)
  168. Schmidt O G et al. Appl. Phys. Lett. 77 2509 (2000)
  169. Dunbar A et al. Appl. Phys. Lett. 78 1658 (2001)
  170. Shamirzaev T S i dr. Fiz. Tverd. Tela 47 80 (2005); Shamirzaev T S et al. Phys. Solid State 47 82 (2005)
  171. Fonseca A et al. Mat. Sci. Eng. B 124 - 125 462 (2005)
  172. Dashiell M W, Denker U, Schmidt O G Appl. Phys. Lett. 79 2261 (2001)
  173. Konle J, Presting H, Kibbel H Physica E 16 596 (2003)
  174. Shklyaev A A, Ichikawa M Appl. Phys. Lett. 80 1432 (2002)
  175. Shklyaev A A et al. J. Phys. Condens. Matter 19 136004 (2007)
  176. Dvurechenskii A V i dr. FNT 30 1169 (2004); Dvurechensky A V et al. Low Temp. Phys. 30 877 (2004)
  177. Nakayama Y et al. Appl. Phys. Lett. 88 253102 (2006)
  178. Nakamura Y et al. Appl. Phys. Lett. 87 133119 (2005)
  179. Konchenko A et al. Phys. Rev. B 73 113311 (2006)
  180. Shklyaev A A, Nakamura Y, Ichikawa M J. Appl. Phys. 101 033532 (2007)
  181. Drozdov N A, Patrin A A, Tkachev V D Pis’ma ZhETF 23 651 (1976); Drozdov N A, Patrin A A, Tkachev V D JETP Lett. 23 597 (1976)
  182. Kveder V V et al. Phys. Rev. B 51 10520 (1995)
  183. Leoni E et al. Eur. Phys. J. Appl. Phys. 27 123 (2004)
  184. Kittler M et al. Phys. Status Solidi A 203 802 (2006)
  185. Kveder V et al. Phys. Status Solidi A 202 901 (2005)
  186. Liu F et al. Phys. Rev. B 51 17192 (1995)
  187. Castaldini A et al. Phys. Rev. Lett. 95 076401 (2005)
  188. Blumenau A T et al. Phys. Rev. Lett. 87 187404 (2001)
  189. Suezawa M, Sasaki Y, Sumino K Phys. Status Solidi A 79 173 (1983)
  190. Landsberg P T Solid-State Electron. 10 513 (1967)
  191. Canham L T Appl. Phys. Lett. 57 1046 (1990)
  192. Takagahara T, Takeda K Phys. Rev. B 46 15578 (1992)
  193. Kovalev D et al. Phys. Status Solidi B 215 871 (1999)
  194. Feng D H et al. Phys. Rev. B 68 035334 (2003)
  195. Cullis A G, Canham L T, Calcott P D J J. Appl. Phys. 82 909 (1997)
  196. Tsybeskov L et al. Appl. Phys. Lett. 72 43 (1998)
  197. Franzò G et al. Appl. Phys. Lett. 64 2235 (1994)
  198. Remizov D Yu i dr. Fiz. Tverd. Tela 47 95 (2005); Remizov D Yu et al. Phys. Solid State 47 98 (2005)
  199. Kenyon A J Semicond. Sci. Technol. 20 R65 (2005)
© 1918–2024 Uspekhi Fizicheskikh Nauk
Email: ufn@ufn.ru Editorial office contacts About the journal Terms and conditions