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Extremely dense arrays of germanium and silicon nanostructures

 a, b,  b
a Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation
b Quantum-Phase Electronics Center, Department of Applied Physics, The University of Tokyo and Japan Science and Technology Agency, CREST, 7-3-1 Hongo, Tokyo, 113-8656, Japan

Results of investigations into surface processes of the formation of germanium and silicon nanostructures are analyzed. A mechanism of three-dimensional island nucleation and relaxation of strained two-dimensional layers in heteroepitaxy of germanium on silicon, which initiates spontaneous island growth, is considered. The oxidation of the silicon surface prior to germanium or silicon deposition drastically alters the growth mechanism, leading to the formation of islands with an extremely high areal density of 1012-1013 cm-2 and with sizes of less than 10 nm. The effects of spatial quantization determine their properties. Moreover, arrays of these islands form a unique surface for the growth of Si layers that are able to emit photons in the 1.5-1.6-μm wavelength range.

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Fulltext is also available at DOI: 10.1070/PU2008v051n02ABEH006344
PACS: 78.55.Ap, 81.07.−b, 81.16.−c (all)
DOI: 10.1070/PU2008v051n02ABEH006344
URL: https://ufn.ru/en/articles/2008/2/b/
000256729400002
2-s2.0-45149130684
2008PhyU...51..133S
Citation: Shklyaev A A, Ichikawa M "Extremely dense arrays of germanium and silicon nanostructures" Phys. Usp. 51 133–161 (2008)
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Оригинал: Шкляев А А, Ичикава М «Предельно плотные массивы наноструктур германия и кремния» УФН 178 139–169 (2008); DOI: 10.3367/UFNr.0178.200802b.0139

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