Fabrication of germanium and silicon nanostructures using a scanning tunneling microscope
A.A. Shklyaev a, b
M. Ichikawa b
a Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation
b Quantum-Phase Electronics Center, Department of Applied Physics, The University of Tokyo and Japan Science and Technology Agency, CREST, 7-3-1 Hongo, Tokyo, 113-8656, Japan
The state of the art of research on the fabrication of
semiconductor surface nanostructures using a scanning tunneling microscope (STM) is reviewed. The continuous atom transfer occurring due to directional surface diffusion initiated by the
STM electric field and involving field-induced evaporation is
analyzed. The effect of irradiation with an external electron
beam on the tip-sample interaction is discussed, which consists in reducing the barrier for direct interatomic reactions and in changing the direction of the tip-sample atomic transfer.
The possibilities of fabricating germanium and silicon nanostructures such as islands and lines and also making silicon
windows on oxidized silicon surfaces are demonstrated.