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Fabrication of germanium and silicon nanostructures using a scanning tunneling microscope

 a, b,  b
a Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation
b Quantum-Phase Electronics Center, Department of Applied Physics, The University of Tokyo and Japan Science and Technology Agency, CREST, 7-3-1 Hongo, Tokyo, 113-8656, Japan

The state of the art of research on the fabrication of semiconductor surface nanostructures using a scanning tunneling microscope (STM) is reviewed. The continuous atom transfer occurring due to directional surface diffusion initiated by the STM electric field and involving field-induced evaporation is analyzed. The effect of irradiation with an external electron beam on the tip-sample interaction is discussed, which consists in reducing the barrier for direct interatomic reactions and in changing the direction of the tip-sample atomic transfer. The possibilities of fabricating germanium and silicon nanostructures such as islands and lines and also making silicon windows on oxidized silicon surfaces are demonstrated.

Fulltext is available at IOP
PACS: 68.37.Ef, 79.70.+q, 81.16.Ta (all)
DOI: 10.1070/PU2006v049n09ABEH006070
URL: https://ufn.ru/en/articles/2006/9/a/
Citation: Shklyaev A A, Ichikawa M "Fabrication of germanium and silicon nanostructures using a scanning tunneling microscope" Phys. Usp. 49 887–903 (2006)
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Оригинал: Шкляев А А, Ичикава М «Создание наноструктур германия и кремния с помощью зонда сканирующего туннельного микроскопа» УФН 176 913–930 (2006); DOI: 10.3367/UFNr.0176.200609a.0913

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