A.A. Shklyaev

Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences
Address: prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation

Quantum-Phase Electronics Center, Department of Applied Physics, The University of Tokyo and Japan Science and Technology Agency, CREST
Address: 7-3-1 Hongo, Tokyo, 113-8656, Japan


  1. A.A. Shklyaev, M. Ichikawa “Extremely dense arrays of germanium and silicon nanostructures51 133–161 (2008)
  2. A.A. Shklyaev, M. Ichikawa “Fabrication of germanium and silicon nanostructures using a scanning tunneling microscope49 887–903 (2006)

See also: M. Ichikawa

PACS: 78.55.Ap, 81.07.-b, 81.16.-c, 68.37.Ef, 79.70.+q, 81.16.Ta

© 1918–2020 Uspekhi Fizicheskikh Nauk
Email: ufn@ufn.ru Editorial office contacts About the journal Terms and conditions