61.72.Cc Kinetics of defect formation and annealing 61.72.Tt Doping and impurity implantation in germanium and silicon 61.72.Yx Interaction between different crystal defects; gettering effect

G.A. Malygin “Strength and plasticity of nanocrystalline materials and nanosized crystals” 54 1091–1116 (2011)
61.72.Cc, 61.82.Rx, 62.20.fq, 62.25.−g (all)
A.R. Chelyadinskii, F.F. Komarov “Defect-impurity engineering in implanted silicon” 46 789–820 (2003)
61.72.Cc, 61.72.Tt, 61.72.Yx (all)
V.G. Plekhanov “Isotope engineering” 43 1147–1154 (2000)
42.70.Hj, 42.81.Qb, 61.72.Tt, 66.30.Hs (all)
B.N. Mukashev, Kh.A. Abdullin, Yu.V. Gorelkinskii “Metastable and bistable defects in silicon” 43 139–150 (2000)
61.72.−y, 61.72.Tt, 61.80.−x, 71.55.−i (all)
B.A. Volkov “Semiconductor encyclopedia—once again” 31 384–384 (1988)
01.30.Kj, 61.72.Tt, 61.72.Vv, 72.20.−i, 61.66.Fn (all)
M.I. Klinger, Ch.B. Lushchik et al “Defect formation in solids by decay of electronic excitations” 28 994–1014 (1985)
61.72.Cc, 71.35.Aa, 61.43.Dq, 61.82.Fk (all)
S.M. Klotsman “Role of defects in the formation of the properties of metals” 28 272–273 (1985)
61.72.Cc, 61.72.Ji (all)
V.V. Kirsanov, A.N. Orlov “Computer simulation of the atomic structure of defects in metals” 27 106–133 (1984)
61.72.Ji, 61.72.Bb, 61.72.Yx, 66.30.Lw, 61.72.Lk, 61.72.Mm (all)

PACS numbers