PACS numbers

61.72.Cc Kinetics of defect formation and annealing 61.72.Tt Doping and impurity implantation in germanium and silicon 61.72.Yx Interaction between different crystal defects; gettering effect
  1. G.A. Malygin “Strength and plasticity of nanocrystalline materials and nanosized crystals54 1091–1116 (2011)
    61.72.Cc, 61.82.Rx, 62.20.fq, 62.25.−g (all)
  2. A.R. Chelyadinskii, F.F. Komarov “Defect-impurity engineering in implanted silicon46 789–820 (2003)
    61.72.Cc, 61.72.Tt, 61.72.Yx (all)
  3. V.G. Plekhanov “Isotope engineering43 1147–1154 (2000)
    42.70.Hj, 42.81.Qb, 61.72.Tt, 66.30.Hs (all)
  4. B.N. Mukashev, Kh.A. Abdullin, Yu.V. Gorelkinskii “Metastable and bistable defects in silicon43 139–150 (2000)
    61.72.−y, 61.72.Tt, 61.80.−x, 71.55.−i (all)
  5. B.A. Volkov “Semiconductor encyclopedia—once again31 384–384 (1988)
    01.30.Kj, 61.72.Tt, 61.72.Vv, 72.20.−i, 61.66.Fn (all)
  6. M.I. Klinger, Ch.B. Lushchik et alDefect formation in solids by decay of electronic excitations28 994–1014 (1985)
    61.72.Cc, 71.35.Aa, 61.43.Dq, 61.82.Fk (all)
  7. S.M. Klotsman “Role of defects in the formation of the properties of metals28 272–273 (1985)
    61.72.Cc, 61.72.Ji (all)
  8. V.V. Kirsanov, A.N. Orlov “Computer simulation of the atomic structure of defects in metals27 106–133 (1984)
    61.72.Ji, 61.72.Bb, 61.72.Yx, 66.30.Lw, 61.72.Lk, 61.72.Mm (all)
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